PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
Rev. 2 — 15 March 2012
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD523 ultra small and flat
lead Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
Forward current: I
F
≤
1 A
Reverse voltage: V
R
≤
30 V
Very low forward voltage
AEC-Q101 qualified
Ultra small and flat lead SMD plastic
package
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1 A; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ;
T
amb
= 25 °C
Conditions
T
sp
≤
55 °C
Min
-
-
-
Typ
-
-
610
Max
1
30
680
Unit
A
V
mV
2. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
[1]
anode
1
1
2
sym001
Simplified outline
Graphic symbol
2
SOD523
[1]
The marking bar indicates the cathode.
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG3010EB
-
Description
plastic surface-mounted package; 2 leads
Version
SOD523
Type number
4. Marking
Table 4.
Marking codes
Marking code
KA
Type number
PMEG3010EB
5. Limiting values
Table 5.
Symbol
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
Limiting values
Parameter
reverse voltage
forward current
repetitive peak forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
T
sp
≤
55 °C
t
p
≤
1 ms;
δ ≤
0.25
t
p
= 8 ms; T
j(init)
= 25 °C; square wave
T
amb
≤
25 °C
[1]
In accordance with the Absolute Maximum Rating System (IEC 60134).
Conditions
Min
-
-
-
-
-
-
-65
-65
Max
30
1
3
5
310
150
150
150
Unit
V
A
A
A
mW
°C
°C
°C
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
Conditions
in free air
[1][2]
Min
-
Typ
-
Max
400
Unit
K/W
R
th(j-sp)
[3]
-
-
75
K/W
[1]
[2]
[3]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses P
R
are a
significant part of the total power losses.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Soldering point of cathode tab.
PMEG3010EB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 15 March 2012
2 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 0.1 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ; T
amb
= 25 °C
I
F
= 1 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ; T
amb
= 25 °C
I
F
= 10 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ; T
amb
= 25 °C
I
F
= 100 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ; T
amb
= 25 °C
I
F
= 500 mA; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ; T
amb
= 25 °C
I
F
= 1 A; pulsed; t
p
≤
300 µs;
δ ≤
0.02 ;
T
amb
= 25 °C
I
R
C
d
reverse current
diode capacitance
V
R
= 10 V; T
amb
= 25 °C
V
R
= 30 V; T
amb
= 25 °C
V
R
= 1 V; f = 1 MHz; T
amb
= 25 °C
Min
-
-
-
-
-
-
-
-
-
Typ
90
150
210
295
430
610
15
70
24
Max
180
200
270
360
500
680
200
500
30
Unit
mV
mV
mV
mV
mV
mV
µA
µA
pF
10
4
I
F
(mA)
10
3
006aaa855
I
R
(μA)
10
5
(1)
006aaa856
10
4
10
3
(2)
(3)
10
2
10
2
(4)
10
10
(1)
(2)
(3)
(4)
(5)
1
10
−1
10
−2
10
−3
(5)
1
10
−1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
F
(V)
0
5
10
15
20
25
30
V
R
(V)
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 85 °C
(4) T
amb
= 25 °C
(5) T
amb
=
−40
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
Fig 2.
(1) T
amb
= 150 °C
(2) T
amb
= 125 °C
(3) T
amb
= 85 °C
(4) T
amb
= 25 °C
(5) T
amb
=
−40
°C
Reverse current as a function of reverse
voltage; typical values
PMEG3010EB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 15 March 2012
3 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
40
C
d
(pF)
30
006aaa857
20
10
0
0
10
20
V
R
(V)
30
f = 1 MHz; T
amb
= 25 °C
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
8. Test information
t
p
t
cy
P
t
cy
t
p
duty cycle δ =
t
006aac658
Fig 4.
Duty cycle definition
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG3010EB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 15 March 2012
4 of 9
NXP Semiconductors
PMEG3010EB
1 A very low VF MEGA Schottky barrier rectifier
9. Package outline
0.85
0.75
1
0.65
0.58
1.65 1.25
1.55 1.15
2
0.34
0.26
Dimensions in mm
0.17
0.11
02-12-13
Fig 5.
Package outline SOD523
10. Soldering
2.15
1.1
solder lands
solder resist
1.2
0.5 0.6
(2×) (2×)
solder paste
occupied area
0.7
(2×)
0.8
(2×)
Dimensions in mm
sod523_fr
Fig 6.
Reflow soldering footprint for SOD523
PMEG3010EB
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 2 — 15 March 2012
5 of 9
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
