OM6001ST OM6003ST OM6101ST OM6103ST
OM6002ST OM6004ST OM6102ST OM6104ST
POWER MOSFET IN HERMETIC ISOLATED
JEDEC TO-257AA PACKAGE
100V Thru 500V, Up To 14 Amp, N-Channel
MOSFET With Or Without Zener Gate
Clamp Protection
FEATURES
•
•
•
•
•
•
Isolated Hermetic Metal Package
Bi-Lateral Zener Gate Protection (Optional)
Fast Switching, Low Drive Current
Ease Of Paralleling For Added Power
Low R
DS(on)
Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This series of hermetically packaged products feature the latest advanced MOSFET
and packaging technology. They are ideally suited for Military requirements where
small size, high performance and high reliability are required, and in applications such
as switching power supplies, motor controls, inverters, choppers, audio amplifiers and
high energy pulse circuits. The MOSFET gates are protected using bi-lateral zener
clamps in the OM6101ST series.
MAXIMUM RATINGS
PART NUMBER
OM6001ST/OM6101ST
OM6002ST/OM6102ST
OM6003ST/OM6103ST
OM6004ST/OM6104ST
Note:
V
DS
100 V
200 V
400 V
500 V
R
DS(on)
.20
.44
1.05
1.60
I
D
14 A
9A
5.5 A
4.5 A
3.1
OM6101ST thru OM6104ST is supplied with zener gate protection.
OM6001ST thru OM6004ST is supplied without zener gate protection.
SCHEMATIC
WITHOUT ZENER CLAMPS
OM6001ST - 6004ST
1 - DRAIN
WITH ZENER CLAMPS
OM6101ST - 6104ST
1 - DRAIN
3 - GATE
3 - GATE
ZENERS
2 - SOURCE
2 - SOURCE
4 11 R4
Supersedes 1 07 R3
3.1 - 71
3.1
OM6001ST - OM6104ST
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage (OM6101)
Gate-Body Leakage (OM6001)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
Current
1
14
1.2
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage (OM6102)
Gate-Body Leakage (OM6002)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
Current
1
9.0
1.25
0.1
0.2
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6101ST / OM6001ST (100V)
Min. Typ. Max. Units Test Conditions
100
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
1.60
0.20
0.40
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A
V
GS
= 10 V, I
D
= 8 A,
T
C
= 125 C
STATIC P/N OM6102ST / OM6002 ST (200V)
Min. Typ. Max. Units Test Conditions
200
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
2.2
0.44
0.88
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A
V
GS
= 10 V, I
D
= 5.0 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
4.0
750
250
100
15
35
38
23
S(W
)
V
DS
2 V
DS(on)
, I
D
= 8 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 30 V, I
D
@
8 A
R
g
= 7.5
W
, V
DS
= 10 V
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
3.0
5.8
780
150
55
9
18
45
27
S(W
)
V
DS
2 V
DS(on)
, I
D
= 5.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 75V, I
D
@
5.0 A
R
g
= 7.5
W
, V
GS
=10 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
Diode Forward Voltage
1
Diode Forward Voltage
1
Reverse Recovery Time
100
- 14
- 56
- 2.5
- 2.5
A
A
V
V
ns
Modified MOSPOWER
symbol showing
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source
Current
1
(Body Diode)
-9
- 36
-2
-2
250
A
A
V
V
ns
the integral P-N
Junction rectifier.
T
C
= 25 C, I
S
= -14 A, V
GS
= 0
T
C
= 25 C, I
S
= -12 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
V
SD
t
rr
Diode Forward Voltage
1
Diode Forward Voltage
1
Reverse Recovery Time
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
Transductance
1
(W )
3.1 - 72
DYNAMIC
DYNAMIC
Forward Transductance
1
Modified MOSPOWER
symbol showing
G
D
the integral P-N
Junction rectifier.
S
T
C
= 25 C, I
S
= -9 A, V
GS
= 0
T
C
= 25 C, I
S
= -8 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage (OM6103)
Gate-Body Leakage (OM6003)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
5.5
2.4
0.1
0.2
(T
C
= 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS:
Parameter
BV
DSS
Drain-Source Breakdown
Voltage
V
GS(th)
I
GSS
I
GSS
I
DSS
Gate-Threshold Voltage
Gate-Body Leakage (OM6104)
Gate-Body Leakage (OM6004)
Zero Gate Voltage Drain
Current
I
D(on)
On-State Drain Current
1
Voltage
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
R
DS(on)
Static Drain-Source On-State
Resistance
1
2.9
4.5
0.1
0.2
(T
C
= 25°C unless otherwise noted)
STATIC P/N OM6103ST / OM6003ST (400V)
Min. Typ. Max. Units Test Conditions
400
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
3.15
1.05
2.0
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A
V
GS
= 10 V, I
D
= 3.0 A,
T
C
= 125 C
STATIC P/N OM6104ST / OM6004ST (500V)
Min. Typ. Max. Units Test Conditions
500
2.0
4.0
± 500
± 100
0.25
1.0
V
V
nA
nA
mA
mA
A
3.25 4.00
1.6
3.3
V
V
GS
= 0,
I
D
= 250
mA
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= ± 12.8 V
V
GS
= ± 20 V
V
DS
= Max. Rat., V
GS
= 0
V
DS
= 0.8 Max. Rat., V
GS
= 0,
T
C
= 125° C
V
DS
2 V
DS(on)
, V
GS
= 10 V
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A
V
GS
= 10 V, I
D
= 2.5 A,
T
C
= 125 C
V
DS(on)
Static Drain-Source On-State
V
DS(on)
Static Drain-Source On-State
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Forward
3.0
3.6
700
70
20
18
20
40
25
S(W
)
V
DS
2 V
DS(on)
, I
D
= 3.0 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 175 V, I
D
@
3.0 A
R
g
= 10
W
,V
GS
= 10 V
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
2.5
2.8
700
90
30
18
20
42
25
S(W
)
V
DS
2 V
DS(on)
, I
D
= 2.5 A
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0
V
DS
= 25 V
f = 1 MHz
V
DD
= 225 V, I
D
@
2.5 A
R
g
= 7.5
W
, V
GS
= 10 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
V
SD
V
SD
t
rr
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Diode Forward Voltage
1
Reverse Recovery Time
470
- 5.5
- 22
- 1.6
- 2.5
A
A
V
V
ns
Modified MOSPOWER
symbol showing
G
D
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
I
SM
S
Continuous Source Current
(Body Diode)
Source Current
1
(Body Diode)
Diode Forward Voltage
1
Diode Forward Voltage
1
Reverse Recovery Time
430
- 4.5
- 18
- 1.4
-2
the integral P-N
Junction rectifier.
A
V
V
ns
T
C
= 25 C, I
S
= -5.5 A, V
GS
= 0
T
C
= 25 C, I
S
= -4.5 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
V
SD
V
SD
t
rr
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test:
Pulse Width 300msec, Duty Cycle
2%.
(W )
A
Transductance
1
(W )
3.1 - 73
DYNAMIC
DYNAMIC
Forward Transductance
1
Modified MOSPOWER
symbol showing
the integral P-N
Junction rectifier.
G
D
OM6001ST - OM6104ST
S
T
C
= 25 C, I
S
= -4.5 A, V
GS
= 0
T
C
= 25 C, I
S
= -4 A, V
GS
= 0
T
J
= 150 C, I
F
= I
S
,
dl
F
/ds = 100 A/ms
3.1
OM6001ST - OM6104ST
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Parameter
V
DS
V
DGR
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
Junction To Case
Junction To Ambient
T
J
T
stg
Lead Temperature
Drain-Source Voltage
Drain-Gate Voltage (R
GS
= 1 M )
Continuous Drain Current
2
Continuous Drain Current
2
Pulsed Drain Current
1
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Linear Derating Factor
Operating and
Storage Temperature Range
(1/16" from case for 10 secs.)
-55 to 150
300
-55 to 150
300
-55 to 150
300
-55 to 150
300
°C
°C
OM6001ST OM6002ST OM6003ST OM6004ST
Units
OM6101ST OM6102ST OM6103ST OM6104ST
100
100
±14
±9
±56
50
20
0.4
.015
200
200
±9
±6
±36
50
20
0.4
.015
400
400
±5.5
±3.5
±22
50
20
0.4
.015
500
500
±4.5
±3
±18
50
20
0.4
.015
V
V
A
A
A
W
W
W/°C
W/°C
1 Pulse Test:
Pulse width 300 µsec. Duty Cycle 2%.
2 Package Pin Limitations
= 16 amps
THERMAL RESISTANCE (MAXIMUM) at T
A
= 25°C
R
thJC
R
thJA
Junction-to-Case
Junction-to-Ambient
2.5
65
°C/W
°C/W Free Air Operation
POWER DERATING
P
D
- POWER DISSIPATION (WATTS)
90
75
60
45
30
Rθ
JC
= 2.5° C/W
MECHANICAL OUTLINE
WITH PIN CONNECTION
.420
.410
.200
.190
.045
.035
.665
.645
.537
.527
.430
.410
.038 MAX.
3.1
.150
.140
1 2 3
15
0
0
25
50
75 100 125 150 175
T
C
- CASE TEMPERATURE (C°)
Pin 1: Drain
Pin 2: Source
Pin 3: Gate
.750
.500
.005
.035
.025
.100 TYP.
.120 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Note: MOSFETs are also available in Z-Tab, dual and quad pak styles. Duals and quads available in non-gate versions only.
Please call the factory for more information.
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
模拟与混合信号
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