1SS270
High-speed switching diode
Features
1. Low capacitance
2. Short reverse recovery time (t
rr
≤3.5
ns)
3. Small glass package (DO-34)
4. High reliability
Applications
Extreme fast switches
Absolute Maximum Ratings
(T
j
=25℃)
Parameter
Peak reverse voltage
Reverse voltage
Average rectified current
Peak forward current
Non-Repetitive peak forward
surge current
Power dissipation
Junction temperature
Storage temperature range
P
V
T
j
T
stg
250
175
-65~+175
mW
℃
℃
t
p
=1s
Test Conditions
Type
Symbol
V
RM
V
R
I
O
I
FM
I
FSM
Value
35
30
150
450
1
Unit
V
V
mA
mA
A
Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the
recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may
affect device reliability.
Electrical Characteristics
(T
j
=25℃)
Parameter
Forward voltage
Reverse current
Capacitance
Reverse recovery time
I
F
=10mA
V
R
=30V
V
R
=1V, f=1MHz
I
F
=10mA, V
R
=6V, R
L
=50Ω
Test Conditions
Symbol
V
F
I
R
C
t
rr
Min
Typ
Max
0.8
1.0
3.0
3.5
Unit
V
μA
pF
ns
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
1/2
1SS270
Characteristics
(T
j
=25℃ unless otherwise specified)
Fig.1 Forward current vs. forward voltage
Fig.2 Capacitance vs. reverse voltage
Dimensions in mm
Cathode identification
Cathode
Φ1.8±0.2
Anode
0.4±0.1
29±1
2.7±0.3
29±1
Standard Glass Case
JEDEC DO-34
Excel Semiconductor
www.excel-semi.com
FaxBack +86-512-67606917
Rev. 3g, 1-Sep-2009
2/2