Bulletin I27132 rev. E 10/01
IRK.71, .91 SERIES
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL under approval
3500V
RMS
isolating voltage
ADD-A-pak
TM
GEN V Power Modules
Benefits
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
75 A
95 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
I
T(AV)
or I
F(AV)
@ 85°C
I
O(RMS)
(*)
I
TSM
@ 50Hz
I
FSM
@ 60Hz
I
2
t
I
2
√t
V
RRM
range
T
STG
T
J
(*) As AC switch.
IRK.71
75
165
1665
1740
13.86
12.56
138.6
IRK.91
95
210
1785
1870
15.91
14.52
159.1
Units
A
A
A
A
KA
2
s
KA
2
s
KA
2
√s
V
o
o
@ 50Hz
@ 60Hz
400 to 1600
- 40 to 125
- 40 to125
C
C
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1
IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
04
06
08
IRK.71/ .91
10
12
14
16
V
RRM
, maximum
V
RSM
, maximum
V
DRM
, max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
400
600
800
1000
1200
1400
1600
I
RRM
I
DRM
125°C
mA
V
500
700
900
1100
1300
1500
1700
V
400
600
800
1000
1200
1400
1600
15
On-state Conduction
Parameters
I
T(AV)
I
F(AV)
Max. average on-state
current (Thyristors)
Max. average forward
current (Diodes)
I
O(RMS
)
Max. continuous RMS
on-state current.
As AC switch
I
TSM
or
I
FSM
Max. peak, one cycle
non-repetitive on-state
or forward current
165
1665
1740
1400
1470
1850
1940
I t
2
IRK.71
IRK.91
Units
Conditions
180
o
conduction, half sine wave,
T
C
= 85
o
C
75
95
210
A
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
0.80
0.85
2.40
2.25
1.58
KA
√s
V
mΩ
V
2
I
(RMS)
t=8.3ms reapplied
or
I
(RMS)
Sinusoidal
half wave,
Initial T
J
= T
J
max.
t=10ms No voltage
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
t=8.3ms no voltage reapplied
t=10ms No voltage
t=8.3ms reapplied
KA s
2
Max. I t for fusing
2
13.86
12.56
9.80
8.96
17.11
15.60
t=10ms 100% V
RRM
t=8.3ms reapplied
t=10ms T
J
= 25
o
C,
Initial T
J
= T
J
max.
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied
Low level (3)
High level (4)
Low level
High level (4)
I
TM
=
π
x I
T(AV)
I
FM
=
π
x I
F(AV)
T
J
= T
J
max
(3)
T
J
= T
J
max
T
J
= 25°C
I
√t
2
Max. I
√t
for fusing (1)
voltage (2)
2
138.6
0.82
0.85
3.00
2.90
1.59
V
T(TO)
Max. value of threshold
r
t
V
TM
V
FM
di/dt
Max. value of on-state
slope resistance (2)
Max. peak on-state or
forward voltage
Max. non-repetitive rate
of rise of turned on
current
I
H
I
L
Max. holding current
Max. latching current
T
J
= 25
o
C, from 0.67 V
DRM
,
150
200
mA
400
A/µs
I
TM
=π x I
T(AV)
,
I = 500mA,
t
r
< 0.5 µs, t
p
> 6 µs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
(3) 16.7% x
π
x I
AV
< I <
π
x I
AV
g
(1) I
2
t for time t
x
=
I
2
√
t x
√
t
x
(4) I >
π
x I
AV
(2) Average power
=
V
T(TO)
x I
T(AV)
+
r
t
x (I
T(RMS)
)
2
2
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
Triggering
Parameters
P
GM
I
GM
Max. peak gate power
P
G(AV)
Max. average gate power
Max. peak gate current
gate voltage
V
GT
Max. gate voltage
required to trigger
I
GT
Max. gate current
required to trigger
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
-V
GM
Max. peak negative
IRK.71
12
3.0
3.0
10
4.0
2.5
1.7
270
150
80
IRK.91
12
3.0
3.0
Units
W
A
Conditions
V
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
T
J
= - 40°C
T
J
= 25°C
T
J
= 125°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
mA
V
GD
I
GD
0.25
6
V
mA
T
J
= 125
o
C,
rated V
DRM
applied
T
J
= 125
o
C,
rated V
DRM
applied
Blocking
Parameters
I
RRM
I
DRM
Max. peak reverse and
off-state leakage current
at V
RRM
, V
DRM
V
INS
RMS isolation voltage
2500 (1 min)
3500 (1 sec)
500
V
V/µs
15
mA
T
J
= 125
o
C, gate open circuit
50 Hz, circuit to base, all terminals
shorted
T
J
= 125
o
C, linear to 0.67 V
DRM
,
gate open circuit
IRK.71
IRK.91
Units
Conditions
dv/dt Max. critical rate of rise
of off-state voltage (5)
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
T
J
T
stg
Junction operating
temperature range
Storage temp. range
resistance, junction
to case
R
thCS
Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
to heatsink
busbar
wt
Approximate weight
Case style
0.1
5
3
110 (4)
TO-240AA
Nm
gr (oz)
JEDEC
0.165
IRK.71
IRK.91
Units
°C
Conditions
- 40 to 125
- 40 to 125
0.135
K/W
Per module, DC operation
Mounting surface flat, smooth and greased
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
R
thJC
Max. internal thermal
∆R
Conduction (per Junction)
Devices
IRK.71
IRK.91
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
Sine half wave conduction
180
0.06
0.04
o
Rect. wave conduction
30
0.18
0.12
o
120
0.07
0.05
o
90
0.09
0.06
o
60
0.12
0.08
o
180
0.04
0.03
o
120
o
0.08
0.05
90
o
0.10
0.06
60
o
0.13
0.08
30
o
0.18
0.12
Units
°C/W
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
Ordering Information Table
Device Code
IRK.92 types
With no auxiliary cathode
IRK
1
1
2
3
4
5
6
-
-
-
-
-
-
T
2
91
3
/
16
4
A
5
S90
6
Module type
Circuit configuration (See Circuit Configuration table below)
Current code
* *
Voltage code (See Voltage Ratings table)
A : Gen V
dv/dt code:
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
e.g. : IRKT92/16A etc.
* *
Available with no auxiliary cathode.
To specify change:
71 to 72
91 to 92
Outline Table
Dimensions are in millimeters and [inches]
IRKT
(1)
~
IRKH
(1)
~
IRKL
(1)
~
+
(2)
+
(2)
+
(2)
-
(3)
G1 K1
(4) (5)
K2 G2
(7) (6)
G1 K1
(4) (5)
-
(3)
-
(3)
K2 G2
(7) (6)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.71, .91 Series
Bulletin I27132 rev. E 10/01
M axim um A llo w a ble C ase Te m per ature ( C)
M axim um A llo w able C a se Te m peratur e ( C)
130
120
110
C o nduction Ang le
130
120
110
IR K.71.. Series
R
thJC
(DC ) = 0.33 K/W
IRK.71.. Series
R
thJC
(D C ) = 0 .3 3 K/W
C o nd u ction Pe rio d
100
90
80
70
0
10
20
30
40
50
60
70
80
A vera g e O n -sta te C urre nt (A )
100
90
30
80
70
0
20
40
60
80
100
120
A vera g e O n-sta te C urren t (A )
60
90
1 20
1 80
DC
30
60
90
120
180
Fig. 1 - Current Ratings Characteristics
M axim um A verage O n-state Pow er Loss (W )
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
A verag e O n -sta te C urre nt (A )
18 0
12 0
90
60
30
RM S Lim it
M axim um Avera ge O n-state Po w er Loss (W )
140
120
100
80
Fig. 2 - Current Ratings Characteristics
DC
180
120
90
60
30
RM S Lim it
60
C o n d u c tio n P e rio d
C o ndu ction Ang le
40
20
0
0
20
40
60
80
100
120
A vera g e O n -state C urre n t (A)
IRK.71.. Series
Per Ju n ctio n
T
J
= 125 C
IR K.71 .. Series
Per Ju nctio n
T
J
= 12 5 C
Fig. 3 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
800
700
1
10
100
Nu m b e r O f Eq ua l Am p litu d e Ha lf C y c le C u rre n t P u lse s (N)
Fig. 4 - On-state Power Loss Characteristics
P eak Half Sine W ave On -state C urrent (A )
1800
1600
1400
1200
1000
800
Pe ak H alf Sine W ave O n-state Curre nt (A )
A t A ny Ra te d Lo a d C o nditio n A nd W ith
Rate d V
RR M
A p p lie d Fo llo w ing Surg e .
Initia l T
J
= 125 C
@ 60 H z 0.0083 s
@ 50 H z 0.0100 s
M axim u m N o n Re p etitive Su rg e C urre n t
V e rsus Pu lse Train D uration . C o ntro l
O f C o n duc tio n M a y N ot Be M a inta ine d .
Initial T
J
= 125 C
N o V olta g e Re ap plie d
Ra te d V
RRM
Re ap p lie d
IRK.71.. Se ries
Pe r Junc tion
IRK.71.. Se rie s
Pe r Junc tion
0.1
P ulse Tra in D ura tio n (s)
1
600
0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
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