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IDT7201LA40PB

产品描述FIFO, 512X9, 40ns, Asynchronous, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28
产品类别存储    存储   
文件大小153KB,共14页
制造商IDT (Integrated Device Technology)
下载文档 详细参数 全文预览

IDT7201LA40PB概述

FIFO, 512X9, 40ns, Asynchronous, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

IDT7201LA40PB规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称IDT (Integrated Device Technology)
零件包装代码DIP
包装说明DIP,
针数28
Reach Compliance Codecompliant
ECCN代码EAR99
最长访问时间40 ns
周期时间50 ns
JESD-30 代码R-PDIP-T28
JESD-609代码e0
长度36.576 mm
内存密度4608 bit
内存宽度9
湿度敏感等级1
功能数量1
端子数量28
字数512 words
字数代码512
工作模式ASYNCHRONOUS
最高工作温度125 °C
最低工作温度-55 °C
组织512X9
可输出NO
封装主体材料PLASTIC/EPOXY
封装代码DIP
封装形状RECTANGULAR
封装形式IN-LINE
并行/串行PARALLEL
峰值回流温度(摄氏度)240
认证状态Not Qualified
座面最大高度4.699 mm
最大供电电压 (Vsup)5.5 V
最小供电电压 (Vsup)4.5 V
标称供电电压 (Vsup)5 V
表面贴装NO
技术CMOS
温度等级MILITARY
端子面层TIN LEAD
端子形式THROUGH-HOLE
端子节距2.54 mm
端子位置DUAL
处于峰值回流温度下的最长时间20
宽度15.24 mm

文档预览

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CMOS ASYNCHRONOUS FIFO
256 x 9, 512 x 9, 1K x 9
Integrated Device Technology, Inc.
IDT7200L
IDT7201LA
IDT7202LA
FEATURES:
First-In/First-Out dual-port memory
256 x 9 organization (IDT7200)
512 x 9 organization (IDT7201)
1K x 9 organization (IDT7202)
Low power consumption
— Active: 770mW (max.)
—Power-down: 2.75mW (max.)
Ultra high speed—12ns access time
Asynchronous and simultaneous read and write
Fully expandable by both word depth and/or bit width
Pin and functionally compatible with 720X family
Status Flags: Empty, Half-Full, Full
Auto-retransmit capability
High-performance CEMOS™ technology
Military product compliant to MIL-STD-883, Class B
Standard Military Drawing #5962-87531, 5962-89666,
5962-89863 and 5962-89536 are listed on this function
Industrial temperature range (-40oC to +85oC) is
available, tested to military electrical specifications
DESCRIPTION:
The IDT7200/7201/7202 are dual-port memories that load
and empty data on a first-in/first-out basis. The devices use
Full and Empty flags to prevent data overflow and underflow
and expansion logic to allow for unlimited expansion capability
in both word size and depth.
The reads and writes are internally sequential through the
use of ring pointers, with no address information required to
load and unload data. Data is toggled in and out of the devices
through the use of the Write (
W
) and Read (
R
) pins.
The devices utilizes a 9-bit wide data array to allow for
control and parity bits at the user’s option. This feature is
especially useful in data communications applications where
it is necessary to use a parity bit for transmission/reception
error checking. It also features a Retransmit (
RT
) capability
that allows for reset of the read pointer to its initial position
when
RT
is pulsed low to allow for retransmission from the
beginning of data. A Half-Full Flag is available in the single
device mode and width expansion modes.
The IDT7200/7201/7202 are fabricated using IDT’s high-
speed CMOS technology. They are designed for those
applications requiring asynchronous and simultaneous read/
writes in multiprocessing and rate buffer applications. Military
grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
(D
0
–D
8
)
W
WRITE
CONTROL
WRITE
POINTER
RAM
ARRAY
256 x 9
512 x 9
1024 x 9
READ
POINTER
R
READ
CONTROL
THREE-
STATE
BUFFERS
DATA OUTPUTS
(Q
0
–Q
8
)
RS
RESET
LOGIC
FLAG
LOGIC
EF
FF
XO
/
HF
FL
/
RT
XI
EXPANSION
LOGIC
2679 drw 01
The IDT logo is a trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES
©1996
Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
DECEMBER 1996
DSC-2679/7
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