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SB140-T

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小73KB,共3页
制造商Diodes Incorporated
标准
下载文档 详细参数 全文预览

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SB140-T概述

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, DO-41, ROHS COMPLIANT, PLASTIC PACKAGE-2

SB140-T规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证符合
厂商名称Diodes Incorporated
零件包装代码DO-41
包装说明O-PALF-W2
针数2
Reach Compliance Codenot_compliant
ECCN代码EAR99
Factory Lead Time14 weeks
Samacsys DescriptionSchottky Diodes & Rectifiers 1.0A 40V
其他特性LOW POWER LOSS, FREE WHEELING DIODE
外壳连接ISOLATED
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.5 V
JEDEC-95代码DO-41
JESD-30 代码O-PALF-W2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流40 A
元件数量1
端子数量2
最高工作温度150 °C
最低工作温度-65 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式LONG FORM
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压40 V
表面贴装NO
技术SCHOTTKY
端子面层Bright Tin (Sn)
端子形式WIRE
端子位置AXIAL
处于峰值回流温度下的最长时间40

SB140-T文档预览

SB120 - SB160
1.0A SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 40A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish, RoHS Compliant (Note 3)
A
B
A
C
D
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: DO-41 Plastic
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Ordering Information: See Last Page
Marking: Type Number
Weight: 0.3 grams (approximate)
@ T
A
= 25°C unless otherwise specified
Dim
A
B
C
D
DO-41 Plastic
Min
25.40
4.06
0.71
2.00
Max
¾
5.21
0.864
2.72
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
(See Figure 1)
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (Note 2)
Peak Reverse Current
at Rated DC Blocking Voltage (Note 2)
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
R
qJL
R
qJA
T
j
T
STG
SB120
20
14
SB130
30
21
SB140
40
28
1.0
40
SB150
50
35
SB160
60
42
Unit
V
V
A
A
0.50
0.5
10
15
50
-65 to +125
-65 to +150
0.70
5.0
V
mA
°C/W
°C/W
Typical Thermal Resistance Junction to Lead (Note 1)
Typical Thermal Resistance Junction to Ambient
Operating Temperature Range
Storage Temperature Range
Notes:
-65 to +150
°C
1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration test pulse used to minimize self-heating effect.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS23022 Rev. 5 - 2
1 of 3
www.diodes.com
SB120-SB160
ã
Diodes Incorporated
10
I
(O),
AVERAGE FORWARD CURRENT (A)
I
F
, INSTANTANEOUS FWD CURRENT (A)
1.0
T
j
= +125
°
C
T
j
= +75
°
C
T
j
= +25
°
C
1.0
T
j
= -25
°
C
0.5
Resistive or Inductive Load
0.375” (9.5mm) lead length
SB120 - SB140
SB150 & SB160
1% Duty Cycle
0
25
50
75
100
125
150
0.1
0.2
0.4
0.6
0.8
1.0
1.2
T
L
, LEAD TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics - SB120 thru SB140
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
40
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
j
= T
j(max)
30
1.0
T
j
= +125ºC
20
T
j
= +25ºC
0.1
10
1% Duty Cycle
0.01
0
0.2
0.4
0.6
0.8
1.0
0
1
10
100
V
F
, INSTANTANEOUS FWD VOLTAGE (V)
Fig. 3 Typ. Forward Characteristics - SB150 thru SB160
NUMBER OF CYCLES AT 60 Hz
Fig. 4 Max Non-Repetitive Peak Fwd Surge Current
10,000
1000
T
j
= 25
°
C
f = 1.0MHz
V
sig
= 50m Vp-p
C
T
, TOTAL CAPACITANCE (pF)
1000
T
j
= +125
°
C
100
SB120 - SB140
T
j
= +75
°
C
100
SB150 - SB160
10
1
T
j
= +25
°
C
0.1
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 5 Typical Total Capacitance
T
j
= -25
°
C
0.01
0
25
50
75
100
PERCENTAGE OF PEAK REVERSE VOLTAGE (%)
Fig. 6 Typical Reverse Characteristics, SB120 thru SB140
DS23022 Rev. 5 - 2
2 of 3
www.diodes.com
SB120-SB160
10,000
1000
T
j
= +125
°
C
100
T
j
= +70
°
C
10
1
T
j
= +25
°
C
0.1
0
50
100
PERCENTAGE OF PEAK REVERSE VOLTAGE (%)
Fig. 7 Typical Reverse Characteristics, SB150 thru SB160
Ordering Information
Device
SB120-A
SB120-B
SB120-T
SB130-A
SB130-B
SB130-T
SB140-A
SB140-B
SB140-T
SB150-A
SB150-B
SB150-T
SB160-A
SB160-B
SB160-T
Notes:
(Note 4)
Packaging
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
DO-41 Plastic
Shipping
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
5K/Ammo Pack
1K/Bulk
5K/Tape & Reel, 13-inch
4. For packaging details, visit our website at http://www.diodes.com/datasheets/ap02008.pdf
DS23022 Rev. 5 - 2
3 of 3
www.diodes.com
SB120-SB160

 
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