MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed switching applications.
•
High DC Current Gain —
hFE = 2500 (Typ) @ IC = 4.0 Adc
•
Collector Emitter Sustaining Voltage — @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) — BDX53B, 54B
VCEO(sus)
= 100 Vdc (Min) — BDX53C, 54C
•
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat)
= 4.0 Vdc (Max) @ IC = 5.0 Adc
•
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
•
TO–220AB Compact Package
BDX53B
BDX53C
BDX54B
BDX54C
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80 – 100 VOLTS
65 WATTS
NPN
PNP
PD, POWER DISSIPATION (WATTS)
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MAXIMUM RATINGS
Rating
Symbol
VCEO
VCB
VEB
IC
IB
PD
BDX53B
BDX54B
80
80
BDX53C
BDX54C
100
100
Unit
Vdc
Vdc
Vdc
Adc
Adc
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
5.0
8.0
12
0.2
Collector Current — Continuous
Peak
Base Current
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Operating and Storage Junction
Temperature Range
60
0.48
Watts
W/
_
C
TJ, Tstg
– 65 to + 150
_
C
THERMAL CHARACTERISTICS
Characteristic
CASE 221A–06
TO–220AB
Symbol
R
θJA
Max
70
70
Unit
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
_
C/W
_
C/W
R
θJC
TA TC
4.0 80
3.0
60
TC
2.0
40
TA
1.0
20
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
REV 7
Motorola Bipolar Power Transistor Device Data
3–221
BDX53B BDX53C BDX54B BDX54C
t, TIME (
µ
s)
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ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Max
Unit
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
VCEO(sus)
Vdc
BDX53B, BDX54B
BDX53C, BDX54C
BDX53B, BDX54B
BDX53C, BDX54C
80
100
—
—
—
—
—
—
ICEO
mAdc
0.5
0.5
0.2
0.2
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
ICBO
mAdc
BDX53B, BDX54B
BDX53C, BDX54C
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
hFE
750
—
—
Collector–Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
Base–Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VCE(sat)
Vdc
—
—
—
2.0
4.0
2.5
VBE(sat)
Vdc
DYNAMIC CHARACTERISTICS
Small–Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
hfe
4.0
—
—
Cob
pF
(1) Pulse Test: Pulse Width
v
300
µs,
Duty Cycle
v
2%.
BDX53B, 53C
BDX54B, 54C
—
—
300
200
5.0
VCC
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
– 30 V
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB 100 mA
RC
MSD6100 USED BELOW IB 100 mA
SCOPE
TUT
RB
V2
APPROX
+ 8.0 V
D1
51
8.0 k
120
0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.07
0.05
0.1
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
tr
tf
ts
[
[
[
[
V1
APPROX
25
µs
–12 V
tr, tf 10 ns
DUTY CYCLE = 1.0%
+ 4.0 V
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
v
td @ VBE(off) = 0 V
0.5 0.7 1.0
2.0 3.0
0.3
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
Figure 2. Switching Time Test Circuit
Figure 3. Switching Times
3–222
Motorola Bipolar Power Transistor Device Data
BDX53B BDX53C BDX54B BDX54C
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
1.0
0.7
0.5
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.01
0.05
0.02
t1
SINGLE PULSE
t2
SINGLE
PULSE
P(pk)
R
θJC
(t) = r(t) R
θJC
R
θJC
= 1.92°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC
(t)
50
100
200 300
500
1000
D = 0.5
0.2
DUTY CYCLE, D = t1/t2
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
Figure 4. Thermal Response
20
10
IC, COLLECTOR CURRENT (AMP)
5.0
2.0
1.0
0.5
0.2
0.1
5.0 ms
1.0 ms
100
µs
500
µs
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
BDX53B, BDX54B
BDX53C, BDX54C
20 30
2.0 3.0
5.0 7.0 10
50
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
70 100
0.05
0.02
1.0
There are two limitations on the power handling ability of a
transistor average junction temperature and second break-
down. Safe operating area curves indicate IC –VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150
_
C. TJ(pk) may be calculated from the data in Fig-
ure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
t
Figure 5. Active–Region Safe Operating Area
10,000
hFE, SMALL–SIGNAL CURRENT GAIN
5000
3000
2000
1000
500
300
200
100
50
30
20
10
1.0
2.0
C, CAPACITANCE (pF)
300
TJ = + 25°C
200
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
PNP
NPN
5.0
10
20
50 100
f, FREQUENCY (kHz)
200
500
1000
100
70
50
PNP
NPN
30
0.1
0.2
Cib
Cob
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 6. Small-Signal Current Gain
Figure 7. Capacitance
Motorola Bipolar Power Transistor Device Data
3–223
BDX53B BDX53C BDX54B BDX54C
NPN
BDX53B, 53C
20,000
VCE = 4.0 V
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
– 55°C
500
300
200
0.1
TJ = 150°C
10,000
hFE, DC CURRENT GAIN
5000
3000
2000
1000
500
300
200
0.1
– 55°C
25°C
TJ = 150°C
20,000
VCE = 4.0 V
PNP
BDX54B, 54C
25°C
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
Figure 8. DC Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
3.0
TJ = 25°C
2.6
IC = 2.0 A
2.2
4.0 A
6.0 A
1.8
1.8
1.4
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
Figure 9. Collector Saturation Region
3.0
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.5
3.0
TJ = 25°C
2.5
2.0
VBE(sat) @ IC/IB = 250
VBE @ VCE = 4.0 V
VCE(sat) @ IC/IB = 250
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
2.0
1.5
1.5
VBE @ VCE = 4.0 V
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
1.0
1.0
0.5
0.1
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
3–224
Motorola Bipolar Power Transistor Device Data
BDX53B BDX53C BDX54B BDX54C
NPN
BDX53B, BDX53C
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
+ 4.0
+ 3.0
+ 2.0
+ 1.0
0
– 1.0
– 2.0
– 3.0
– 4.0
– 5.0
0.1
0.2 0.3
0.5 0.7 1.0
θ
VB for VBE
*θVC for VCE(sat)
25°C to 150°C
– 55 to 150°C
2.0 3.0
5.0
7.0 10
– 55°C to 25°C
PNP
BDX54B, BDX54C
θ
V, TEMPERATURE COEFFICIENT (mV/
°
C)
+ 5.0
+ 4.0
+ 3.0
+ 2.0
+ 1.0
0
– 1.0
– 2.0
– 3.0
– 4.0
– 5.0
0.1
0.2 0.3
0.5 0.7 1.0
θ
VB for VBE
*θVC for VCE(sat)
25°C to 150°C
– 55 to 150°C
2.0 3.0
5.0
7.0 10
– 55°C to 25°C
*IC/IB
+ 5.0
*IC/IB
v
hFE/3
25°C to 150°C
v
hFE/3
25°C to 150°C
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
105
IC, COLLECTOR CURRENT (
µ
A)
IC, COLLECTOR CURRENT (
µ
A)
104
103
102
TJ = 150°C
101
100
100°C
REVERSE
VCE = 30 V
FORWARD
105
104
103
102
101
100
TJ = 150°C
100°C
25°C
0
– 0.2 – 0.4 – 0.6 – 0.8 – 1.0 – 1.2 – 1.4
REVERSE
VCE = 30 V
FORWARD
25°C
10– 1
– 0.6 – 0.4 – 0.2
0
+ 0.2 + 0.4 + 0.6 + 0.8
+ 1.0 + 1.2 + 1.4
10– 1
+ 0.6 + 0.4 + 0.2
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut–Off Region
NPN
BDX53B
BDX53C
COLLECTOR
PNP
BDX54B
BDX54C
COLLECTOR
BASE
BASE
[
8.0 k
[
120
EMITTER
[
8.0 k
[
120
EMITTER
Figure 13. Darlington Schematic
Motorola Bipolar Power Transistor Device Data
3–225
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