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BZV55 series
Voltage regulator diodes
Rev. 5 — 26 January 2011
Product data sheet
1. Product profile
1.1 General description
Low-power voltage regulator diodes in small hermetically sealed glass SOD80C
Surface-Mounted Device (SMD) packages. The diodes are available in the normalized
E24
2
% (BZV55-B) and approximately
5
% (BZV55-C) tolerance range.
The series consists of 37 types with nominal working voltages from 2.4 V to 75 V.
1.2 Features and benefits
Non-repetitive peak reverse power
dissipation:
40 W
Total power dissipation:
500 mW
Two tolerance series:
2
% and
5
%
Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)
Low differential resistance
Small hermetically sealed glass
SMD package
1.3 Applications
General regulation functions
1.4 Quick reference data
Table 1.
Symbol
V
F
P
ZSM
[1]
Quick reference data
Parameter
forward voltage
non-repetitive peak
reverse power dissipation
Conditions
I
F
= 10 mA
[1]
Min
-
-
Typ
-
-
Max
0.9
40
Unit
V
W
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
2. Pinning information
Table 2.
Pin
1
2
Pinning
Description
cathode
anode
[1]
Simplified outline
Graphic symbol
k
a
1
2
006aaa152
[1]
The marking band indicates the cathode.
NXP Semiconductors
BZV55 series
Voltage regulator diodes
3. Ordering information
Table 3.
Ordering information
Package
Name
BZV55-B2V4 to
BZV55-C75
[1]
[1]
Type number
Description
hermetically sealed glass surface-mounted
package; 2 connectors
Version
SOD80C
-
The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.
4. Marking
Table 4.
Marking codes
Marking code
marking band
Type number
BZV55-B2V4 to BZV55-C75
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
F
I
ZSM
Parameter
forward current
non-repetitive peak
reverse current
non-repetitive peak
reverse power dissipation
total power dissipation
storage temperature
junction temperature
t
p
= 100
s;
square wave; T
j
= 25
C
prior to surge
Device mounted on a ceramic substrate of 10
10
0.6 mm.
[1]
Conditions
Min
-
-
Max
250
see
Table 8
and
9
40
400
500
+200
+200
Unit
mA
P
ZSM
P
tot
T
stg
T
j
[1]
[2]
[1]
-
-
-
65
65
W
mW
mW
C
C
T
amb
50
C
T
tp
50
C
[2]
[2]
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
[1]
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
[1]
Min
-
-
Typ
-
-
Max
380
300
Unit
K/W
K/W
Device mounted on a ceramic substrate of 10
10
0.6 mm.
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
2 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
10
0.02
0.01
≤
0.001
006aab072
1
10
−1
1
10
10
2
10
3
10
4
t
p
(ms)
10
5
Fig 1.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol
V
F
I
R
Parameter
forward voltage
reverse current
BZV55-B/C2V4
BZV55-B/C2V7
BZV55-B/C3V0
BZV55-B/C3V3
BZV55-B/C3V6
BZV55-B/C3V9
BZV55-B/C4V3
BZV55-B/C4V7
BZV55-B/C5V1
BZV55-B/C5V6
BZV55-B/C6V2
BZV55-B/C6V8
BZV55-B/C7V5
BZV55-B/C8V2
BZV55-B/C9V1
BZV55-B/C10
BZV55-B/C11
BZV55-B/C12
BZV55-B/C13
BZV55-B/C15 to BZV55-B/C75
BZV55_SER
Conditions
I
F
= 10 mA
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 0.7V
Z(nom)
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max
0.9
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
Unit
V
A
A
A
A
A
A
A
A
A
A
A
A
A
nA
nA
nA
nA
nA
nA
nA
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
3 of 13
NXP Semiconductors
BZV55 series
Voltage regulator diodes
Table 8.
Characteristics per type; BZV55-B2V4 to BZV55-C24
T
j
= 25
C unless otherwise specified.
BZV55-
xxx
Sel
Working
voltage
V
Z
(V)
I
Z
= 5 mA
Min
2V4
2V7
3V0
3V3
3V6
3V9
4V3
4V7
5V1
5V6
6V2
6V8
7V5
8V2
9V1
10
11
12
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
B
C
2.35
2.2
2.65
2.5
2.94
2.8
3.23
3.1
3.53
3.4
3.82
3.7
4.21
4.0
4.61
4.4
5.0
4.8
5.49
5.2
6.08
5.8
6.66
6.4
7.35
7.0
8.04
7.7
8.92
8.5
9.8
9.4
10.8
10.4
11.8
11.4
Max
2.45
2.6
2.75
2.9
3.06
3.2
3.37
3.5
3.67
3.8
3.98
4.1
4.39
4.6
4.79
5.0
5.2
5.4
5.71
6.0
6.32
6.6
6.94
7.2
7.65
7.9
8.36
8.7
9.28
9.6
10.2
10.6
11.2
11.6
12.2
12.7
50
150
10
25
6.0
8.4
10.0
85
2.5
50
150
10
20
5.4
7.4
9.0
85
2.5
50
150
8
20
4.5
6.4
8.0
90
3.0
40
100
6
15
3.8
5.5
7.0
150
3.0
40
80
6
15
3.2
4.6
6.2
150
4.0
30
80
6
15
2.5
4.0
5.3
150
4.0
30
80
6
15
1.2
3.0
4.5
200
6.0
40
150
6
10
0.4
2.3
3.7
200
6.0
80
400
15
40
2.0
1.2
2.5
300
6.0
400
480
40
60
2.7
0.8
1.2
300
6.0
425
500
50
80
3.5
1.4
0.2
300
6.0
410
600
80
90
3.5
2.5
0
450
6.0
400
600
85
90
3.5
2.5
0
450
6.0
375
600
85
90
3.5
2.4
0
450
6.0
350
600
85
95
3.5
2.4
0
450
6.0
325
600
80
95
3.5
2.1
0
450
6.0
300
600
75
100
3.5
2.0
0
450
6.0
Differential resistance
r
dif
()
I
Z
= 1 mA
Typ
275
Max
600
I
Z
= 5 mA
Typ
70
Max
100
Temperature
coefficient
S
Z
(mV/K)
I
Z
= 5 mA
Min
3.5
Typ
1.6
Max
0
Max
450
Diode
capacitance
C
d
(pF)
[1]
Non-repetitive
peak reverse
current
I
ZSM
(A)
[2]
Max
6.0
BZV55_SER
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 5 — 26 January 2011
4 of 13
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