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Datasheet> 器件分类 > 分立半导体> 二极管> UMAF5819E3
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UMAF5819E3

产品描述Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2
产品类别分立半导体    二极管   
文件大小306KB，共3页
制造商Microsemi
官网地址https://www.microsemi.com
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UMAF5819E3概述

Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2

UMAF5819E3规格参数

参数名称属性值
厂商名称Microsemi
包装说明R-PDSO-N2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
JESD-30 代码R-PDSO-N2
元件数量1
端子数量2
最高工作温度125 °C
最低工作温度-50 °C
最大输出电流1 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
最大重复峰值反向电压40 V
表面贴装YES
技术SCHOTTKY
端子形式NO LEAD
端子位置DUAL

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UMAF5817, UMAF5818, and UMAF5819
ULTRAMITE™ SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIERS
SCOTTSDALE DIVISION
E
NVIRONMENTALLY
L
EAD
-F
REE
DESCRIPTION
The UMAF5817 thru UMAF5819 UltraMite™ series offers a
Lead-Free
construction (both internally and externally) in a small efficient surface
mount package with the same electrical features as the popular 1N5817,
1N5818, and 1N5819 Schottky rectifiers. It provides the same size footprint
as other small surface mount DO-214AC or BA package options except
with a much lower profile height. Its configuration in a “2010 MELF” style
robust package design prevents lead damage to terminals and also
minimizes parasitics by eliminating internal wire bonds and providing very
short internal conduction paths.
IMPORTANT:
For the most current data, consult
MICROSEMI’s
website:
http://www.microsemi.com
APPEARANCE
WWW .
Microsemi
.C
OM
UltraMite™
FEATURES
•
•
•
•
•
•
•
Plastic package has Underwriters Laboratory
Flammability classification 94V-0
Metal to silicon rectifier, majority carrier conduction
High current capability, low V
F
Built-in stress relief with similar COE as PC boards
Lead-Free
construction externally and internally
Optional Lead-Tin finish available (UMA5817-19)
Options for screening in accordance with MIL-PRF-
19500/586 for JAN, JANTX, JANTXV, and JANS
are available by adding MQ, MX, MV, or MSP
prefixes respectively to part numbers. For example,
designate a MXUMAFJ5819 for a JANTX screen.
•
•
APPLICATIONS / BENEFITS
For surface mount applications
For use in low-voltage high-frequency switching
power supplies, inverters, free wheeling, and
polarity protection applications
Low power loss, High efficiency
Low inductive parasitics for minimal Ldi/dt effects
Fits same small PCB footprints as popular
“SMAJxxx” or “SMBJxxx” Schottky devices in
JEDEC outlines DO-214AC (or BA) and DO-214AA
respectively except with much lower height profile
Robust 2010 MELF style package configuration for
pick-and-place handling
•
•
•
•
MAXIMUM RATINGS
•
•
•
MECHANICAL AND PACKAGING
•
•
FRP substrate material and epoxy under-fill
package meeting UL94V-0
Terminals Tin plated (solderable per MIL-STD-750,
Method 2026)
Body marked with F817, F818, or F819
Cathode designated with band
Weight: 0.020 grams
Tape & Reel packaging per EIA-481-2 with 12 mm
tape and 3000 units/reel (7 inch reel) or 10,000
units/reel (13 inch reel)
See package dimensions on last page
•
•
Operating junction and storage temperature
range (T
J
and T
STG
): -50
o
C to +125
o
C
Forward average rectified current (I
O
)
@T
C
=75
o
C: 1.0 Amp
Forward surge current (I
FSM
) 8.3 ms single half-
sine waveform superimposed on rated load
(JEDEC Method): 25 Amps
Typical thermal resistance (R
θJL
): 50
o
C/W
Typical junction capacitance (C
J
) at 1.0 MHz
and V
R
of 5.0 Volts: 65 pF for UMAF5817, and
46 pF for UMAF5818 and UMAF5819
Solder temperatures: 260 C for 10 s (maximum)
º
•
•
•
•
•
•
ELECTRICAL CHARACTERISTICS @ 25
o
C
Working
Peak
Reverse
Voltage
V
RWM
Volts
20
30
40
Maximum
RMS
Voltage;
V
RMS
Volts
14
21
28
Maximum
Peak
Repetitive
Voltage;
V
RRM
Volts
20
30
40
UMAF5817 thru
817
UMAF5819
UMAF5819
unless specified otherwise
Part
Number
UMAF5817
UMAF5818
UMAF5819
Maximum
Forward
Voltage at 1.0A
(note 1)
V
F
Volts
0.45
0.55
0.60
Maximum
Forward
Voltage at 3.0A
(note 1)
V
F
Volts
0.75
0.875
0.90
Maximum
dc reverse
current @
V
RWM
I
R
mA
0.5
0.5
0.5
Maximum dc
reverse
current @
o
V
RWM
,100 C
I
R
mA
10
10
10
NOTES:
(1) Pulse test with P
W
=300
µsec,
1% duty cycle.
Copyright
2002
9-16-03 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1

UMAF5819E3相似产品对比

UMAF5819E3 MSPUMAF5819 MVUMAF5818 MSPUMAF5818 MXUMAF5819 MQUMAF5818 MVUMAF5819 MQUMAF5819 MXUMAF5818
描述 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, PLASTIC PACKAGE-2 Rectifier Diode, Schottky, 1 Element, 1A, 30V V(RRM), Silicon, PLASTIC PACKAGE-2
厂商名称 Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi Microsemi
包装说明 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS FREE WHEELING DIODE, LOW POWER LOSS
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2 R-PDSO-N2
元件数量 1 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2 2
最高工作温度 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
最低工作温度 -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C -50 °C
最大输出电流 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
最大重复峰值反向电压 40 V 40 V 30 V 30 V 40 V 30 V 40 V 40 V 30 V
表面贴装 YES YES YES YES YES YES YES YES YES
技术 SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
是否Rohs认证 - 不符合 不符合 不符合 不符合 不符合 不符合 不符合 不符合
针数 - 2 2 2 2 2 2 2 2
JESD-609代码 - e0 e0 e0 e0 e0 e0 e0 e0
峰值回流温度（摄氏度） - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
端子面层 - TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED

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