Datasheet> 器件分类 > 分立半导体> 晶体管> IRF7756GPBF

IRF7756GPBF: 产品描述Small Signal Field-Effect Transistor, 4.3A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN AND LEAD FREE, TSSOP-8; 产品类别分立半导体晶体管; 文件大小237KB，共9页; 制造商Infineon(英飞凌); 官网地址http://www.infineon.com/; 标准

下载文档详细参数全文预览

IRF7756GPBF概述

Small Signal Field-Effect Transistor, 4.3A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, HALOGEN AND LEAD FREE, TSSOP-8

IRF7756GPBF规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Infineon(英飞凌)
包装说明	HALOGEN AND LEAD FREE, TSSOP-8
Reach Compliance Code	compliant
ECCN代码	EAR99
其他特性	HIGH RELIABILITY
配置	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压	12 V
最大漏极电流 (Abs) (ID)	4.3 A
最大漏极电流 (ID)	4.3 A
最大漏源导通电阻	0.04 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	MO-153AA
JESD-30 代码	R-PDSO-G8
JESD-609代码	e3
湿度敏感等级	2
元件数量	2
端子数量	8
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
峰值回流温度（摄氏度）	260
极性/信道类型	P-CHANNEL
最大功率耗散 (Abs)	1 W
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN
端子形式	GULL WING
端子位置	DUAL
处于峰值回流温度下的最长时间	30
晶体管应用	SWITCHING
晶体管元件材料	SILICON

IRF7756GPBF文档预览

PD- 96153A

IRF7756GPbF

HEXFET

Power MOSFET

Ultra Low On-Resistance

Dual P-Channel MOSFET

Very Small SOIC Package

Low Profile (< 1.2mm)

Available in Tape & Reel

Lead-Free

Halogen-Free

DSS

-12V

DS(on)

max

0.040@V

= -4.5V

0.058@V

= -2.5V

0.087@V

= -1.8V

-4.3A

-3.4A

-2.2A

Description

HEXFET

Power MOSFETs from International Rectifier

utilize advanced processing techniques to achieve ex-

tremely low on-resistance per silicon area. This benefit,

combined with the ruggedized device design, that Inter-

national Rectifier is well known for,

provides thedesigner

Ã2Ã9

!Ã2ÃT

"Ã2ÃT

#Ã2ÃB

'Ã2Ã9!

&Ã2ÃT!

%Ã2ÃT!

$Ã2ÃB!

with an extremely efficient and reliable device for

battery and load management.

The TSSOP-8 package has 45% less footprint area than

the standard SO-8. This makes the TSSOP-8 an ideal

device for applications where printed circuit board space

is at a premium. The low profile (<1.1mm) allows it to fit

easily into extremely thin environments such as portable

electronics and PCMCIA cards.

TSSOP-8

Absolute Maximum Ratings

Parameter

@ T

= 25°C

@ T

= 70°C

= 25°C

= 70°C

, T

STG

Drain-Source Voltage

Continuous Drain Current, V

@ -4.5V

Continuous Drain Current, V

@ -4.5V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Junction and Storage Temperature Range

Max.

-12

-4.3

-3.5

-17

1.0

0.64

8.0

±8.0

-55 to +150

Units

mW/°C

°C

Thermal Resistance

Parameter

θJA

Maximum Junction-to-Ambient

Max.

125

Units

°C/W

www.irf.com

05/14/09

IRF7756GPbF

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

(BR)DSS

∆V

(BR)DSS

/∆T

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

DS(on)

GS(th)

DSS

GSS

d(on)

d(off)

iss

oss

rss

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Min.

-12

–––

-0.4

–––

Typ. Max. Units

Conditions

––– –––

= 0V, I

= -250µA

-0.006 ––– V/°C Reference to 25°C, I

= -1mA

––– 0.040

= -4.5V, I

= -4.3A

Ω

––– 0.058

= -2.5V, I

= -3.4A

––– 0.087

= -1.8V, I

= -2.2A

––– -0.9

= V

, I

= -250µA

––– –––

= -10V, I

= -4.3A

––– -1.0

= -9.6V, V

= 0V

µA

––– -25

= -9.6V, V

= 0V, T

= 70°C

––– -100

nA V

= -8.0V

––– 100

= 8.0V

= -4.3A

1.8 2.7

= -6.0V

2.9 4.4

= -4.5V

12 –––

= -6.0V,

18 –––

= -1.0A

160 –––

= 6.0Ω

170 –––

= -4.5V

1400 –––

= 0V

310 –––

= -10V

240 –––

ƒ = 1.0kHz

Source-Drain Ratings and Characteristics

Parameter

Continuous Source Current

(Body Diode)

Pulsed Source Current

(Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Min. Typ. Max. Units

–––

-1.0

-17

-1.2

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

= 25°C, I

= -1.0A, V

= 0V

= 25°C, I

= -1.0A

di/dt = -100A/µs

Notes:

Repetitive rating; pulse width limited by

max. junction temperature.

Surface mounted on FR-4 board,

≤

10sec.

Pulse width

≤

400µs; duty cycle

≤

2%.

www.irf.com

IRF7756GPbF

100

VGS

-7.5V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

BOTTOM -0.8V

TOP

100

-I

, Drain-to-Source Current (A)

-I

, Drain-to-Source Current (A)

VGS

-7.5V

-4.5V

-2.5V

-1.8V

-1.5V

-1.2V

-1.0V

BOTTOM -0.8V

TOP

0.1

-0.8V

20µs PULSE WIDTH

= 150

0.01

0.1

20µs PULSE WIDTH

= 25

0.1

-V

, Drain-to-Source Voltage (V)

-V

, Drain-to-Source Voltage (V)

Fig 1.

Typical Output Characteristics

Fig 2.

Typical Output Characteristics

100

2.0

DS(on)

, Drain-to-Source On Resistance

(Normalized)

= -4.3A

-I D, Drain-to-Source Current

(Α

)

1.5

T J = 150°C

1.0

T J = 25°C

VDS = -10V

20µs PULSE WIDTH

0.5

1.0

1.5

2.0

0.5

0.0

-60 -40 -20

= -4.5V

80 100 120 140 160

-VGS, Gate-to-Source Voltage (V)

, Junction Temperature (

Fig 3.

Typical Transfer Characteristics

Fig 4.

Normalized On-Resistance

Vs. Temperature

www.irf.com

IRF7756GPbF

2400

VGS = 0V,

f = 1 MHZ

Ciss = C + Cgd, C

ds SHORTED

Crss = C

Coss = C + C

ds gd

-4.3A

=-9.6V

=-6V

2000

-V

, Gate-to-Source Voltage (V)

C, Capacitance(pF)

1600

Ciss

1200

800

400

Coss

Crss

100

-V DS, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 5.

Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6.

Typical Gate Charge Vs.

Gate-to-Source Voltage

100

-I

, Reverse Drain Current (A)

-I D, Drain-to-Source Current (A)

OPERATION IN THIS AREA

LIMITED BY R DS(on)

= 150

100µsec

1msec

T A = 25°C

0.1

Tj = 150°C

Single Pulse

0.1

10msec

= 25

= 0 V

0.4

0.6

0.8

1.0

0.1

0.2

-V

,Source-to-Drain Voltage (V)

100

-VDS , Drain-toSource Voltage (V)

Fig 7.

Typical Source-Drain Diode

Forward Voltage

Fig 8.

Maximum Safe Operating Area

www.irf.com

IRF7756GPbF

5.0

4.0

-I

, Drain Current (A)

D.U.T.

3.0

2.0

Pulse Width

≤ 1

µs

Duty Factor

≤ 0.1 %

1.0

Fig 10a.

Switching Time Test Circuit

d(on)

d(off)

0.0

, Case Temperature ( °C)

100

125

150

10%

Fig 9.

Maximum Drain Current Vs.

Case Temperature

90%

Fig 10b.

Switching Time Waveforms

1000

Thermal Response (Z

thJA

)

100

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t

/ t

2. Peak T

= P

x Z

thJA

+ T

0.01

0.1

100

0.1

0.00001

0.0001

0.001

, Rectangular Pulse Duration (sec)

Fig 10.

Typical Effective Transient Thermal Impedance, Junction-to-Ambient

www.irf.com

查看更多（仅显示前5页内容，查看全部内容请下载文档。）>

IRF7756GPBF

IRF7756GPBF概述

IRF7756GPBF规格参数

IRF7756GPBF文档预览

推荐资源