FIFO, 2KX9, 35ns, Asynchronous, CMOS, PQCC32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | QCCJ, LDCC32,.5X.6 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 最长访问时间 | 35 ns |
| 其他特性 | RETRANSMIT |
| 最大时钟频率 (fCLK) | 22.2 MHz |
| 周期时间 | 45 ns |
| JESD-30 代码 | R-PQCC-J32 |
| JESD-609代码 | e0 |
| 内存密度 | 18432 bit |
| 内存集成电路类型 | OTHER FIFO |
| 内存宽度 | 9 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 2048 words |
| 字数代码 | 2000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 2KX9 |
| 输出特性 | 3-STATE |
| 可输出 | NO |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | QCCJ |
| 封装等效代码 | LDCC32,.5X.6 |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 并行/串行 | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 最大待机电流 | 0.005 A |
| 最大压摆率 | 0.1 mA |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| AP9A403A-35JC | AP9A403A-15PC | AP9A403A-20PC | AP9A403A-25JC | AP9A403A-15JC | AP9A403A-35PC | AP9A403A-25PC | AP9A403A-20JC | |
|---|---|---|---|---|---|---|---|---|
| 描述 | FIFO, 2KX9, 35ns, Asynchronous, CMOS, PQCC32 | FIFO, 2KX9, 15ns, Asynchronous, CMOS, PDIP28 | FIFO, 2KX9, 20ns, Asynchronous, CMOS, PDIP28 | FIFO, 2KX9, 25ns, Asynchronous, CMOS, PQCC32 | FIFO, 2KX9, 15ns, Asynchronous, CMOS, PQCC32 | FIFO, 2KX9, 35ns, Asynchronous, CMOS, PDIP28 | FIFO, 2KX9, 25ns, Asynchronous, CMOS, PDIP28 | FIFO, 2KX9, 20ns, Asynchronous, CMOS, PQCC32 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
| 包装说明 | QCCJ, LDCC32,.5X.6 | DIP, DIP28,.3 | DIP, DIP28,.3 | QCCJ, LDCC32,.5X.6 | QCCJ, LDCC32,.5X.6 | DIP, DIP28,.3 | DIP, DIP28,.3 | QCCJ, LDCC32,.5X.6 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 最长访问时间 | 35 ns | 15 ns | 20 ns | 25 ns | 15 ns | 35 ns | 25 ns | 20 ns |
| 其他特性 | RETRANSMIT | RETRANSMIT | RETRANSMIT | RETRANSMIT | RETRANSMIT | RETRANSMIT | RETRANSMIT | RETRANSMIT |
| 最大时钟频率 (fCLK) | 22.2 MHz | 40 MHz | 33.3 MHz | 28.5 MHz | 40 MHz | 22.2 MHz | 28.5 MHz | 33.3 MHz |
| 周期时间 | 45 ns | 25 ns | 30 ns | 35 ns | 25 ns | 45 ns | 35 ns | 30 ns |
| JESD-30 代码 | R-PQCC-J32 | R-PDIP-T28 | R-PDIP-T28 | R-PQCC-J32 | R-PQCC-J32 | R-PDIP-T28 | R-PDIP-T28 | R-PQCC-J32 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit | 18432 bit |
| 内存集成电路类型 | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO | OTHER FIFO |
| 内存宽度 | 9 | 9 | 9 | 9 | 9 | 9 | 9 | 9 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 28 | 28 | 32 | 32 | 28 | 28 | 32 |
| 字数 | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words | 2048 words |
| 字数代码 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 | 2000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 | 2KX9 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 可输出 | NO | NO | NO | NO | NO | NO | NO | NO |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | QCCJ | DIP | DIP | QCCJ | QCCJ | DIP | DIP | QCCJ |
| 封装等效代码 | LDCC32,.5X.6 | DIP28,.3 | DIP28,.3 | LDCC32,.5X.6 | LDCC32,.5X.6 | DIP28,.3 | DIP28,.3 | LDCC32,.5X.6 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER | CHIP CARRIER | IN-LINE | IN-LINE | CHIP CARRIER |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 最大待机电流 | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A |
| 最大压摆率 | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA | 0.1 mA |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| 最小供电电压 (Vsup) | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | NO | NO | YES | YES | NO | NO | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND | J BEND | THROUGH-HOLE | THROUGH-HOLE | J BEND |
| 端子节距 | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm | 2.54 mm | 2.54 mm | 1.27 mm |
| 端子位置 | QUAD | DUAL | DUAL | QUAD | QUAD | DUAL | DUAL | QUAD |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
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