CAT28LV65
64K-Bit CMOS PARALLEL EEPROM
FEATURES
s
3.0V to 3.6V supply
s
Read access times:
s
CMOS and TTL compatible I/O
s
Automatic page write operation:
H
GEN
FR
ALO
EE
LE
A
D
F
R
E
E
TM
– 150/200/250ns
s
Low power CMOS dissipation:
– 1 to 32 bytes in 5ms
– Page load timer
s
End of write detection:
– Active: 8 mA max.
– Standby: 100
µ
A max.
s
Simple write operation:
– On-chip address and data latches
– Self-timed write cycle with auto-clear
s
Fast write cycle time:
– Toggle bit
–
DATA
polling
– RDY/BUSY
BUSY
s
Hardware and software write protection
s
100,000 program/erase cycles
s
100 year data retention
– 5ms max.
s
Commercial, industrial and automotive
temperature ranges
DESCRIPTION
The CAT28LV65 is a low voltage, low power, CMOS
parallel EEPROM organized as 8K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and V
CC
power up/down write protection
eliminate additional timing and protection hardware.
DATA
Polling, RDY/BUSY and Toggle status bit signal
the start and end of the self-timed write cycle. Additionally,
the CAT28LV65 features hardware and software write
protection.
The CAT28LV65 is manufactured using Catalyst’s
advanced CMOS floating gate technology. It is designed
to endure 100,000 program/erase cycles and has a data
retention of 100 years. The device is available in JEDEC
approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-
pin PLCC packages.
BLOCK DIAGRAM
A5–A12
ADDR. BUFFER
& LATCHES
INADVERTENT
WRITE
PROTECTION
ROW
DECODER
8,192 x 8
E
2
PROM
ARRAY
32 BYTE PAGE
REGISTER
VCC
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
I/O BUFFERS
TIMER
DATA POLLING,
RDY/BUSY &
TOGGLE BIT
COLUMN
DECODER
I/O0–I/O7
A0–A4
RDY/BUSY
ADDR. BUFFER
& LATCHES
© Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 1024, Rev. D
CAT28LV65
PIN CONFIGURATION
DIP Package (P, L)
RDY/BUSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
SOIC Package (J, W) (K, X)
RDY/BUSY
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Package (N, G)
A7
A12
RDY/BUSY
TSOP Top View (8mm x 13.4mm) (T13, H13)
OE
A11
A9
A8
NC
WE
Vcc
RDY/BUSY
A12
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
I/07
I/06
I/05
I/04
I/03
GND
I/O2
I/O1
I/O0
A0
A1
A2
NC
VCC
WE
4 3 2 1 32 31 30
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
5
6
29
28
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
7
27
8
26
9
25
TOP VIEW
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
I/O1
I/O2
VSS
I/O3
I/O4
I/O5
NC
PIN FUNCTIONS
Pin Name
A
0
–A
12
I/O
0
–I/O
7
CE
OE
RDY/BSY
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Ready/Busy Status
Pin Name
WE
V
CC
V
SS
NC
Function
Write Enable
3.0 to 3.6 V Supply
Ground
No Connect
Doc. No. 1024, Rev. D
NC
2
CAT28LV65
ABSOLUTE MAXIMUM RATINGS*
Temperature Under Bias ................. –55°C to +125°C
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground
(2)
........... –2.0V to +V
CC
+ 2.0V
V
CC
with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current
(3)
........................ 100 mA
*COMMENT
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specifica-
tion is not implied. Exposure to any absolute maximum
rating for extended periods may affect device perfor-
mance and reliability.
RELIABILITY CHARACTERISTICS
Symbol
N
END(1)
T
DR(1)
V
ZAP(1)
I
LTH(1)(4)
Parameter
Endurance
Data Retention
ESD Susceptibility
Latch-Up
Min.
10
5
100
2000
100
Max.
Units
Cycles/Byte
Years
Volts
mA
Test Method
MIL-STD-883, Test Method 1033
MIL-STD-883, Test Method 1008
MIL-STD-883, Test Method 3015
JEDEC Standard 17
MODE SELECTION
Mode
Read
Byte Write (WE Controlled)
Byte Write (CE Controlled)
Standby, and Write Inhibit
Read and Write Inhibit
H
X
CE
L
L
L
X
H
WE
H
OE
L
H
H
X
H
I/O
D
OUT
D
IN
D
IN
High-Z
High-Z
Power
ACTIVE
ACTIVE
ACTIVE
STANDBY
ACTIVE
CAPACITANCE
T
A
= 25°C, f = 1.0 MHz
Symbol
C
I/O(1)
C
IN(1)
Test
Input/Output Capacitance
Input Capacitance
Max.
10
6
Units
pF
pF
Conditions
V
I/O
= 0V
V
IN
= 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is V
CC
+0.5V, which may overshoot to V
CC
+2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to V
CC
+1V.
3
Doc. No. 1024, Rev. D
CAT28LV65
D.C. OPERATING CHARACTERISTICS
V
cc
= 3.0V to 3.6V, unless otherwise specified.
Limits
Symbol
I
CC
I
SBC(3)
I
LI
I
LO
V
IH(3)
V
IL
V
OH
V
OL
V
WI
Parameter
V
CC
Current (Operating, TTL)
V
CC
Current (Standby, CMOS)
Input Leakage Current
Output Leakage Current
High Level Input Voltage
Low Level Input Voltage
High Level Output Voltage
Low Level Output Voltage
Write Inhibit Voltage
2
–1
–5
2
–0.3
2
0.3
Min.
Typ.
Max.
8
100
1
5
V
CC
+0.3
0.6
Units
mA
µA
µA
µA
V
V
V
V
V
I
OH
= –100µA
I
OL
= 1.0mA
Test Conditions
CE = OE = V
IL
,
f = 1/t
RC
min, All I/O’s Open
CE = V
IHC
,
All I/O’s Open
V
IN
= GND to V
CC
V
OUT
= GND to V
CC
,
CE = V
IH
A.C. CHARACTERISTICS, Read Cycle
V
cc
= 3.0V to 3.6V, unless otherwise specified.
28LV65-15
Symbol
t
RC
t
CE
t
AA
t
OE
t
LZ(1)
t
OLZ(1)
t
HZ(1)(2)
t
OHZ(1)(2)
t
OH(1)
Parameter
Read Cycle Time
CE
Access Time
Address Access Time
OEAccess
Time
CE
Low to Active Output
OE
Low to Active Output
CE
High to High-Z Output
OE
High to High-Z Output
Output Hold from
Address Change
0
0
0
50
50
0
Min.
150
150
150
70
0
0
50
50
0
0
55
55
Max.
28LV65-20
Min.
200
200
200
80
0
Max.
28LV65-25
Min.
250
250
250
100
Max.
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) V
IHC
= V
CC
–0.3V to V
CC
+0.3V.
Doc. No. 1024, Rev. D
4
CAT28LV65
Figure 1. A.C. Testing Input/Output Waveform
(4)
V
CC
- 0.3 V
INPUT PULSE LEVELS
0.0 V
0.6 V
2.0 V
REFERENCE POINTS
Figure 2. A.C. Testing Load Circuit (example)
Vcc
1.8 K
DEVICE
UNDER
TEST
OUTPUT
1. 3K
CL
= 100 pF
CL INCLUDES JIG CAPACITANCE
A.C. CHARACTERISTICS, Write Cycle
V
cc
= 3.0V to 3.6V, unless otherwise specified.
28LV65-15
Symbol
t
WC
t
AS
t
AH
t
CS
t
CH
t
CW(2)
t
OES
t
OEH
t
WP(2)
t
DS
t
DH
t
INIT(1)
t
BLC(1)(3)
t
RB
Parameter
Write Cycle Time
Address Setup Time0
Address Hold Time
CE
Setup Time
CE
Hold Time
CE
Pulse Time
OE
Setup Time
OE
Hold Time
WE
Pulse Width
Data Setup Time
Data Hold Time
Write Inhibit Period
After Power-up
Byte Load Cycle Time
WE
Low to RDY/Busy Low
0
100
0
0
110
0
0
110
60
0
5
0.05
10
100
220
Min
Max
5
0
100
0
0
150
10
10
150
100
0
5
0.1
10
100
220
28LV65-20
Min
Max
5
0
100
0
0
150
10
10
150
100
0
5
0.1
10
100
220
28LV65-25
Min
Max
5
Units
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
µs
ns
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
(3) A timer of duration t
BLC
max. begins with every LOW to HIGH transition of
WE.
If allowed to time out, a page or byte write will begin;
however a transition from HIGH to LOW within t
BLC
max. stops the timer.
(4) Input rise and fall times (10% and 90%) < 10 ns.
5
Doc. No. 1024, Rev. D
微控制器 MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
