NM28F010V120概述

128KX8 FLASH 12V PROM, 120ns, PQCC32, PLASTIC, LCC-32

NM28F010V120规格参数

参数名称	属性值
厂商名称	Texas Instruments(德州仪器)
零件包装代码	QFJ
包装说明	QCCJ,
针数	32
Reach Compliance Code	unknown
ECCN代码	EAR99
最长访问时间	120 ns
其他特性	10K WRITE/ERASE CYCLES MIN
JESD-30 代码	R-PQCC-J32
长度	13.995 mm
内存密度	1048576 bit
内存集成电路类型	FLASH
内存宽度	8
功能数量	1
端子数量	32
字数	131072 words
字数代码	128000
工作模式	ASYNCHRONOUS
组织	128KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	QCCJ
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
并行/串行	PARALLEL
编程电压	12 V
认证状态	Not Qualified
座面最大高度	3.56 mm
最大供电电压 (Vsup)	5.25 V
最小供电电压 (Vsup)	4.75 V
标称供电电压 (Vsup)	5 V
表面贴装	YES
技术	CMOS
端子形式	J BEND
端子节距	1.27 mm
端子位置	QUAD
类型	NOR TYPE
宽度	11.455 mm

NM28F010V120相似产品对比

	NM28F010V120	NM28F010N120	NM28F010TR120	NM28F010M120	NM28F010N100	NM28F010T100	NM28F010V100	NM28F010TR100	NM28F010T120	NM28F010M100
描述	128KX8 FLASH 12V PROM, 120ns, PQCC32, PLASTIC, LCC-32	128KX8 FLASH 12V PROM, 120ns, PDIP32, PLASTIC, DIP-32	128KX8 FLASH 12V PROM, 120ns, PDSO32, EIAJ, PLASTIC, REVERSE, TSOP1-32	128KX8 FLASH 12V PROM, 120ns, PDSO32, SOP-32	128KX8 FLASH 12V PROM, 100ns, PDIP32, PLASTIC, DIP-32	128KX8 FLASH 12V PROM, 100ns, PDSO32, EIAJ, PLASTIC, TSOP1-32	128KX8 FLASH 12V PROM, 100ns, PQCC32, PLASTIC, LCC-32	128KX8 FLASH 12V PROM, 100ns, PDSO32, EIAJ, PLASTIC, REVERSE, TSOP1-32	128KX8 FLASH 12V PROM, 120ns, PDSO32, EIAJ, PLASTIC, TSOP1-32	128KX8 FLASH 12V PROM, 100ns, PDSO32, SOP-32
零件包装代码	QFJ	DIP	TSOP1	SOIC	DIP	TSOP1	QFJ	TSOP1	TSOP1	SOIC
包装说明	QCCJ,	DIP,	TSOP1-R,	SOP,	DIP,	TSOP1,	QCCJ,	TSOP1-R,	TSOP1,	SOP,
针数	32	32	32	32	32	32	32	32	32	32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
最长访问时间	120 ns	120 ns	120 ns	120 ns	100 ns	100 ns	100 ns	100 ns	120 ns	100 ns
其他特性	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN	10K WRITE/ERASE CYCLES MIN
JESD-30 代码	R-PQCC-J32	R-PDIP-T32	R-PDSO-G32	R-PDSO-G32	R-PDIP-T32	R-PDSO-G32	R-PQCC-J32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
内存密度	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
内存集成电路类型	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH	FLASH
内存宽度	8	8	8	8	8	8	8	8	8	8
功能数量	1	1	1	1	1	1	1	1	1	1
端子数量	32	32	32	32	32	32	32	32	32	32
字数	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
字数代码	128000	128000	128000	128000	128000	128000	128000	128000	128000	128000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
组织	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8	128KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	QCCJ	DIP	TSOP1-R	SOP	DIP	TSOP1	QCCJ	TSOP1-R	TSOP1	SOP
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	IN-LINE	SMALL OUTLINE, THIN PROFILE	CHIP CARRIER	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
编程电压	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V	12 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
最大供电电压 (Vsup)	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V	5.25 V
最小供电电压 (Vsup)	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V	4.75 V
标称供电电压 (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
表面贴装	YES	NO	YES	YES	NO	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子形式	J BEND	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	J BEND	GULL WING	GULL WING	GULL WING
端子位置	QUAD	DUAL	DUAL	DUAL	DUAL	DUAL	QUAD	DUAL	DUAL	DUAL
类型	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE	NOR TYPE
厂商名称	Texas Instruments(德州仪器)	-	-	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)
长度	13.995 mm	41.91 mm	18.4 mm	-	41.91 mm	18.4 mm	13.995 mm	18.4 mm	18.4 mm	-
座面最大高度	3.56 mm	4.83 mm	1.2 mm	-	4.83 mm	1.2 mm	3.56 mm	1.2 mm	1.2 mm	-
端子节距	1.27 mm	2.54 mm	0.5 mm	-	2.54 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	-
宽度	11.455 mm	15.24 mm	8 mm	-	15.24 mm	8 mm	11.455 mm	8 mm	8 mm	-

NM28F010V120

NM28F010V120概述

NM28F010V120规格参数

NM28F010V120相似产品对比

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