based on 16Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh
HYM71V32635HCT8M Series
DESCRIPTION
The Hynix HYM71V32635HCT8M Series are 32Mx64bits Synchronous DRAM Modules. The modules are composed of sixteen
16Mx8bits CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin
glass-epoxy printed circuit board. One 0.0022uF decoupling capacitors per each SDRAM are mounted on the PCB.
The Hynix HYM71V32635HCT8M Series are Dual In-line Memory Modules suitable for easy interchange and addition of 256Mbytes
memory. The Hynix HYM71V32635HCT8M Series are fully synchronous operation referenced to the positive edge of the clock . All
inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve very high
bandwidth.
FEATURES
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PC133/PC100MHz support
168pin SDRAM Unbuffered DIMM
Serial Presence Detect with EEPROM
1.155” (29.34mm) Height PCB with double sided
components
Single 3.3±0.3V power supply
- 1, 2, 4 or 8 or Full page for Sequential Burst
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All device pins are compatible with LVTTL interface
- 1, 2, 4 or 8 for Interleave Burst
Data mask function by DQM
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Programmable CAS Latency ; 2, 3 Clocks
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SDRAM internal banks : four banks
Module bank : two physical bank
Auto refresh and self refresh
4096 refresh cycles / 64ms
Programmable Burst Length and Burst Type
ORDERING INFORMATION
Part No.
HYM71V32635HCT8M-K
HYM71V32635HCT8M-H
HYM71V32635HCLT8M-K
HYM71V32635HCLT8M-H
133MHz
4 Banks
4K
Low Power
Clock
Frequency
Internal
Bank
Ref.
Power
Normal
SDRAM
Package
Plating
TSOP-II
Gold
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume any responsibility for
use of circuits described. No patent licenses are implied.
Rev. 0.4/Dec. 01
2
PC133 SDRAM Unbuffered DIMM
HYM71V32635HCT8M Series
PIN DESCRIPTION
PIN
CK0~CK3
CKE0, CKE1
/S0 ~ /S3
BA0, BA1
A0 ~ A11
/RAS, /CAS, /WE
DQM0~DQM7
DQ0 ~ DQ63
VCC
V
SS
SCL
SDA
SA0~2
WP
NC
PIN NAME
Clock Inputs
Clock Enable
Chip Select
SDRAM Bank Address
Address
Row Address Strobe, Column
Address Strobe, Write Enable
Data Input/Output Mask
Data Input/Output
Power Supply (3.3V)
Ground
SPD Clock Input
SPD Data Input/Output
SPD Address Input
Write Protect for SPD
No Connection
DESCRIPTION
The system clock input. All other inputs are registered to the SDRAM on the
rising edge of CLK
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Enables or disables all inputs except CK, CKE and DQM
Selects bank to be activated during /RAS activity
Selects bank to be read/written during /CAS activity
xi 在国际测试大会上，英特尔公司副总裁兼副总经理Gadi Singer在题为“应对频谱纳米技术和千兆复杂性的挑战”的演讲中指出，从1940年以来，每立方英尺MIPS或每磅MIPS数每10年就增加100倍。虽然在平滑的曲线上一直是以指数规律变化，但是，在那个时期仍然有许多不连续性和变形点。 “目前，四个不同的趋势正延伸在所有方向中的曲线，”Singer说道。首先，IC复杂性和多样性...[详细]
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