Amplifier, Power, 1.2W
5.7-8.5 GHz
Features
♦
1.5 Watt Saturated Output Power Level
♦
Variable Drain Voltage (6-10V) Operation
®
♦
MSAG Process
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
Description
The
MAAPGM0068-DIE
is a 3-stage 1.2W power amplifier with
on-chip bias networks. This product is fully matched to 50 ohms
on both the input and output. It can be used as a power amplifier
stage or as a driver stage in high power applications.
Fabricated using M/A-COM’s repeatable, high performance and
highly reliable GaAs Multifunction Self-Aligned Gate (MSAG™)
Process, each device is 100% RF tested on wafer to ensure
performance compliance.
M/A-COM’s MSAG™ process features robust silicon-like manu-
facturing processes, planar processing of ion implanted transis-
tors, multiple implant capability enabling power, low-noise, switch
and digital FETs on a single chip, and polyimide scratch protec-
tion for ease of use with automated manufacturing processes.
The use of refractory metals and the absence of platinum in the
gate metal formulation prevents hydrogen poisoning when em-
ployed in hermetic packaging.
Primary Applications
♦
Point-to-Point Radio
◊
6, 7, and 8 GHz Bands
♦
SatCom
♦
Broadband Wireless Access
Also Available in:
Description
Part Number
Ceramic
MAAPGM0068
Sample Board (Die)
MAAP-000068-SMB004
SAMPLES
Mechanical Sample (Die)
MAAP-000068-MCH000
Electrical Characteristics: T
B
= 25°C
1
, Z
0
= 50
Ω,
V
DD
= 8V, I
DQ
= 320 mA
2
, P
in
= 8 dBm, R
G
= 300
Ω
Parameter
Bandwidth
Output Power
1-dB Compression Point
Small Signal Gain
Power Added Efficiency
Input VSWR
Output VSWR
Output Third Order Intercept
Output Third Order Intermod,
P
out
= 24 dBm (DCL)
Gate Current
Drain Current
1.
2.
Symbol
f
P
OUT
P1dB
G
PAE
VSWR
VSWR
TOI
IMD3
I
GG
I
DD
Typical
5.7-8.5
31
31
28
38
1.4:1
2.1:1
38
35
5
470
dBm
dBc
mA
mA
Units
GHz
dBm
dBm
dB
%
T
B
= MMIC Base Temperature
Adjust V
GG
between –2.6 and –1.2V to achieve specified Idq.
Amplifier, Power, 1.2W
5.7-8.5 GHz
Maximum Ratings
3
Parameter
Input Power
Drain Supply Voltage
Gate Supply Voltage
Quiescent Drain Current (No RF)
Quiescent DC Power Dissipated (No RF)
Junction Temperature
Storage Temperature
Symbol
P
IN
V
DD
V
GG
I
DQ
P
DISS
T
J
T
STG
Absolute Maximum
13
+12.0
-3.0
520
5.2
170
-55 to +150
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
Units
dBm
V
V
mA
W
°C
°C
3. Operation beyond these limits may result in permanent damage to the part.
Recommended Operating Conditions
4
Characteristic
Drain Voltage
Gate Voltage
Input Power
Thermal Resistance
MMIC Base Temperature
Symbol
V
DD
V
GG
P
IN
Θ
JC
T
B
Min
4.0
-2.6
Typ
8.0
-2.0
8.0
28.0
Note 5
Max
10.0
-1.2
11.0
Unit
V
V
dBm
°C/W
°C
4. Operation outside of these ranges may reduce product reliability.
5. MMIC Base Temperature = 170°C —
Θ
JC
* V
DD
* I
DQ
Power Derating Curve, Quiescent (No RF)
6
5
Peak Power Dissipation (W)
4
Operating Instructions
This device is static sensitive. Please handle with care. To
operate the device, follow these steps.
1. Apply V
GG
= -2.7 V, V
DD
= 0 V.
2. Ramp V
DD
to desired voltage, typically 8.0 V.
3. Adjust V
GG
to set I
DQ
, (approximately @ –2.0 V).
4. Set RF input.
3
2
1
0
0
20
40
60
80
100
120
140
160
180
MMIC Base Temperature (ºC)
5.
Power down sequence in reverse. Turn V
GG
off last.
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
35
33
31
29
50
45
40
35
35
33
31
29
P
out
(dBm)
25
23
21
19
17
15
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Pout
PAE
25
20
15
10
5
0
10.5
P
1dB
(dBm)
PAE (%)
27
30
27
25
23
21
19
17
15
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
6V
8V
10V
Frequency (GHz)
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency
at V
D
= 8V, P
in
= 8dBm, and 25% IDSS
35
33
31
29
35
33
31
29
Figure 2. 1dB Compression Point and Drain Voltage at 25% IDSS
Psat (dBm)
25
23
21
19
17
15
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
6V
8V
10V
Psat (dBm)
27
27
25
23
21
19
17
15
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
-20ºC
25ºC
75ºC
Frequency (GHz)
Frequency (GHz)
Figure 3. Saturated Output Power and Drain Voltage at 25% IDSS
45
43
Figure 4. Saturated Output Power and Temperature at 8V and 25%
IDSS
6
1.0
40
36
32
28
24
20
16
12
8
4
0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Gain
Input VSWR
Output VSWR
Output Power (dBm), SSG(dB), PAE
(%)
5
41
39
37
35
33
31
29
27
Pout
SSG
PAE
IDS
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
150
Gain (dB)
4
3
2
1
10.5
25
30
40
50
60
70
80
90
100
110
120
130
140
Frequency (GHz)
Junction Temperature (ºC)
Figure 5. Small Signal Gain and Input and Output VSWR
at 25% IDSS and V
D
= 8V
Figure 6. Output Power, Small Signal Gain, Power Added Efficiency, and
Drain Current vs. Junction Temperature at 8V, 7.5 GHz, and 25% IDSS
Drain Current (A)
VSWR
Amplifier, Power, 1.2W
5.7-8.5 GHz
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
40
38
36
34
32
35
33
31
29
Output Power (dBm)
30
26
24
22
20
18
16
14
12
10
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
6 GHz
7 GHz
8 GHz
9 GHz
Gain (dB)
28
27
25
23
21
19
17
15
12
14
16
18
20
22
24
26
28
30
32
34
36
6 GHz
7 GHz
8 GHz
Input Power (dBm)
Figure 7. Output Power vs. Input Power and Frequency at 10V and 25% IDSS
1.0
50
0.9
45
40
35
30
25
20
15
10
5
0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
6 GHz
7 GHz
8 GHz
9 GHz
0.8
0.7
Output Power (dBm)
Figure 8. Gain vs. Output Power and Frequency at 10V and 25% IDSS
Drain Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
6 GHz
7 GHz
8 GHz
9 GHz
PAE (%)
Input Power (dBm)
Figure 9. Power Added Efficiency vs. Input Power and Frequency at 10V and
25% IDSS
Input Power (dBm)
Figure 10. Drain Current vs. Input Power and Frequency at 10V and 25% IDSS
40
38
36
34
32
35
33
31
29
27
25
23
21
19
17
15
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
12
14
16
18
20
22
24
26
28
30
32
34
36
6 GHz
7 GHz
8 GHz
Output Power (dBm)
30
26
24
22
20
18
16
14
12
10
6 GHz
7 GHz
8 GHz
9 GHz
Gain (dB)
28
Input Power (dBm)
Figure 11. Output Power vs. Input Power and Frequency at 8V and 25% IDSS
Output Power (dBm)
Figure 12. Gain vs. Output Power and Frequency at 8V and 25% IDSS
Amplifier, Power, 1.2W
5.7-8.5 GHz
1.0
50
45
40
35
30
25
20
15
10
5
0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
6 GHz
7 GHz
8 GHz
9 GHz
0.9
0.8
0.7
MAAPGM0068-DIE
Rev B
Preliminary Datasheet
All Data is at 25ºC MMIC base temperature, CW stimulus, unless otherwise noted.
Drain Current (A)
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-12
-10
-8
-6
-4
-2
0
2
4
6
8
10
12
6 GHz
7 GHz
8 GHz
9 GHz
PAE (%)
Input Power (dBm)
Figure 13. Power Added Efficiency vs. Input Power and Frequency at 8V and
25% IDSS
50
48
46
44
42
40
70
90
80
100
Input Power (dBm)
Figure 14. Drain Current vs. Input Power and Frequency at 8V and 25% IDSS
6 GHz
7 GHz
8 GHz
TOI (dBm)
36
34
32
30
28
26
24
22
20
1
3
5
7
9
11
13
15
17
19
21
6 GHz
7 GHz
8 GHz
IMD3 (dBc)
38
60
50
40
30
20
10
0
1
3
5
7
9
11
13
15
17
19
21
Fundamental Output Power, Single Tone (dBm)
Figure 15. Third Order Intercept vs. Output Power and Frequency at 6V.
Fundamental Output Power per Tone (dBm)
Figure 16. Third Order Intermod vs. Output Power and Frequency at 6V.
50
48
46
44
42
40
100
90
80
70
6 GHz
7 GHz
8 GHz
TOI (dBm)
36
34
32
30
28
26
24
22
20
1
3
5
7
9
11
13
15
17
19
21
6 GHz
7 GHz
8 GHz
IMD3 (dBc)
38
60
50
40
30
20
10
0
1
3
5
7
9
11
13
15
17
19
21
Fundamental Output Power, Single Tone (dBm)
Figure 17. Third Order Intercept vs. Output Power and Frequency at 8V.
Fundamental Output Power per Tone (dBm)
Figure 18. Third Order Intermod vs. Output Power and Frequency at 8V.
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
