EDO DRAM, 4MX4, 50ns, CMOS, PDSO24
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | LAPIS Semiconductor Co Ltd |
| 包装说明 | SOJ, SOJ24/26,.34 |
| Reach Compliance Code | unknown |
| 最长访问时间 | 50 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-J24 |
| JESD-609代码 | e0 |
| 内存密度 | 16777216 bit |
| 内存集成电路类型 | EDO DRAM |
| 内存宽度 | 4 |
| 端子数量 | 24 |
| 字数 | 4194304 words |
| 字数代码 | 4000000 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 组织 | 4MX4 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOJ |
| 封装等效代码 | SOJ24/26,.34 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 电源 | 5 V |
| 认证状态 | Not Qualified |
| 刷新周期 | 4096 |
| 自我刷新 | NO |
| 最大待机电流 | 0.001 A |
| 最大压摆率 | 0.1 mA |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| MSM5116405B-50SJ | MSM5116405B-50TS-L | MSM5116405B-70TS-L | MSM5116405B-60SJ | MSM5116405B-70SJ | MSM5116405B-60TS-K | |
|---|---|---|---|---|---|---|
| 描述 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24 | EDO DRAM, 4MX4, 50ns, CMOS, PDSO24 | EDO DRAM, 4MX4, 70ns, CMOS, PDSO24 | EDO DRAM, 4MX4, 60ns, CMOS, PDSO24 | EDO DRAM, 4MX4, 70ns, CMOS, PDSO24 | EDO DRAM, 4MX4, 60ns, CMOS, PDSO24 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | LAPIS Semiconductor Co Ltd | LAPIS Semiconductor Co Ltd | LAPIS Semiconductor Co Ltd | LAPIS Semiconductor Co Ltd | LAPIS Semiconductor Co Ltd | LAPIS Semiconductor Co Ltd |
| 包装说明 | SOJ, SOJ24/26,.34 | TSOP, TSOP24/26,.36 | TSOP, TSOP24/26,.36 | SOJ, SOJ24/26,.34 | SOJ, SOJ24/26,.34 | TSOP, TSOP24/26,.36 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknow |
| 最长访问时间 | 50 ns | 50 ns | 70 ns | 60 ns | 70 ns | 60 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-J24 | R-PDSO-G24 | R-PDSO-G24 | R-PDSO-J24 | R-PDSO-J24 | R-PDSO-G24 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 | e0 |
| 内存密度 | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bit | 16777216 bi |
| 内存集成电路类型 | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM | EDO DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 | 4 | 4 |
| 端子数量 | 24 | 24 | 24 | 24 | 24 | 24 |
| 字数 | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words | 4194304 words |
| 字数代码 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 | 4000000 |
| 最高工作温度 | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
| 组织 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 | 4MX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOJ | TSOP | TSOP | SOJ | SOJ | TSOP |
| 封装等效代码 | SOJ24/26,.34 | TSOP24/26,.36 | TSOP24/26,.36 | SOJ24/26,.34 | SOJ24/26,.34 | TSOP24/26,.36 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE, THIN PROFILE |
| 电源 | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 4096 | 4096 | 4096 | 4096 | 4096 | 4096 |
| 自我刷新 | NO | NO | NO | NO | NO | NO |
| 最大待机电流 | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A | 0.001 A |
| 最大压摆率 | 0.1 mA | 0.1 mA | 0.08 mA | 0.09 mA | 0.08 mA | 0.09 mA |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | J BEND | GULL WING | GULL WING | J BEND | J BEND | GULL WING |
| 端子节距 | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
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