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2 MEG x 8, 1 MEG x 18, 512K x 36
1.8V V
DD
, HSTL, QDRIIb4 SRAM
18Mb QDR II SRAM
4-WORD BURST
Features
• DLL circuitry for accurate output data placement
• Separate independent read and write data ports with
concurrent transactions
• 100 percent bus utilization DDR READ and WRITE
operation
• Fast clock to valid data times
• Full data coherency, providing most current data
• Four-tick burst counter for reduced-address frequency
• Double data rate operation on read and write ports
• Two input clocks (K and K#) for precise DDR timing at
clock rising edges only
• Two output clocks (C and C#) for precise flight time
and clock skew matching—clock and data delivered
together to receiving device
• Optional-use echo clocks (CQ and CQ#) for flexible
receive data synchronization
• Single address bus
• Simple control logic for easy depth expansion
• Internally self-timed, registered writes
• Core V
DD
= 1.8V (±0.1V); I/O V
DD
Q = 1.5V to V
DD
(±0.1V) HSTL
• Clock-stop capability with µs restart
• 13mm x 15mm, 1mm pitch, 11 x 15 grid FBGA package
• User-programmable impedance output
• JTAG boundary scan
™
MT54W2MH8J
MT54W1MH18J
MT54W512H36J
Figure 1: 165-Ball FBGA
Table 1:
Valid Part Numbers
DESCRIPTION
2 Meg x 8,QDRIIb4 FBGA
1 Meg x 18, QDRIIb4 FBGA
512K x 36, QDRIIb4 FBGA
PART NUMBER
MT54W2MH8JF-xx
MT54W1MH18JF-xx
MT54W512H36JF-xx
Options
• Clock Cycle Timing
3ns (333 MHz)
3.3ns (300 MHz)
4ns (250 MHz)
5ns (200 MHz)
6ns (167 MHz)
7.5ns (133 MHz)
• Configurations
2 Meg x 8
1 Meg x 18
512K x 36
• Package
165-ball, 13mm x 15mm FBGA
• Operating Temperature Range
Commercial (0°C
£
T
A
£
+70°C)
NOTE:
Marking
1
-3
-3.3
-4
-5
-6
-7.5
MT54W2MH8J
MT54W1MH18J
MT54W512H36J
F
None
1. A Part Marking Guide for the FBGA devices can be found on
Micron’s Web site—http://www.micron.com/numberguide.
The Micron
®
QDR™II (Quad Data Rate™) synchro-
nous, pipelined burst SRAM employs high-speed, low-
power CMOS designs using an advanced 6T CMOS
process.
The QDR architecture consists of two separate DDR
(double data rate) ports to access the memory array.
The read port has dedicated data outputs to support
READ operations. The write port has dedicated data
inputs to support WRITE operations. This architecture
eliminates the need for high-speed bus turnaround.
Access to each port is accomplished using a common
address bus. Addresses for reads and writes are latched
on alternate rising edges of the K clock. Each address
location is associated with four words that burst
sequentially into or out of the device. Since data can be
transferred into and out of the device on every rising
edge of both clocks (K and K# and C and C#) memory
bandwidth is maximized and system design is simpli-
fied by eliminating bus turnarounds.
General Description
18Mb: 1.8V V
DD
, HSTL, QDRIIb4 SRAM
MT54W1MH18J_H.fm – Rev. H, Pub. 3/03
1
©2003 Micron Technology, Inc.
2 MEG x 8, 1 MEG x 18, 512K x 36
1.8V V
DD
, HSTL, QDRIIb4 SRAM
Depth expansion is accomplished with port selects
for each port (read R#, write W#) which are received at
K rising edge. Port selects permit independent port
operation.
All synchronous inputs pass through registers con-
trolled by the K or K# input clock rising edges. Active
LOW byte writes (BWx#) permit byte write or nibble
write selection. Write data and byte writes are regis-
tered on the rising edges of both K and K#. The
addressing within each burst of four is fixed and
sequential, beginning with the lowest and ending with
the highest address. All synchronous data outputs pass
through output registers controlled by the rising edges
of the output clocks (C and C# if provided, otherwise K
and K#).
Four balls are used to implement JTAG test capabili-
ties: test mode select (TMS), test data-in (TDI), test
clock (TCK), and test data-out (TDO). JTAG circuitry is
used to serially shift data to and from the SRAM. JTAG
inputs use JEDEC-standard 1.8V I/O levels to shift data
during this testing mode of operation.
The SRAM operates from a 1.8V power supply, and
all inputs and outputs are HSTL-compatible. The
device is ideally suited for applications that benefit
from a high-speed, fully-utilized DDR data bus.
Please refer to Micron’s Web site (www.micron.com/
sramds)
for the latest data sheet.
READ cycles are pipelined. The request is initiated
by asserting R# LOW at K rising edge. Data is delivered
after the next rising edge of K# (t + 1), using C and C#
as the output timing references, or using K and K# if C
and C# are tied HIGH. If C and C# are tied HIGH, they
may not be toggled during device operation. Output
tri-stating is automatically controlled such that the bus
is released if no data is being delivered. This permits
banked SRAM systems with no complex output enable
(OE) timing generation. Back-to-back READ cycles are
initiated every K rising edge. Any read request in
between is ignored, since the burst sequence may not
be interrupted and requires two full clock cycles.
WRITE cycles are initiated by W# LOW at K rising
edge. Data is expected at both rising edges of K and K#,
beginning one clock period later. Write registers are
incorporated to facilitate pipelined self-timed WRITE
cycles and provide fully coherent data for all combina-
tions of reads and writes. A read can immediately fol-
low a write even if they are to the same address.
Although the write data has not been written to the
memory array, the SRAM will deliver the data from the
write register instead of using the older data from the
memory array. The latest data is always utilized for all
bus transactions. WRITE cycles are initiated every sec-
ond K rising edge. Any in-between WRITE request is
ignored, since the burst sequence may not be inter-
rupted.
READ/WRITE Operations
All bus transactions operate on an uninterruptable
burst of four data, requiring one full clock cycle of bus
utilization. Any request that attempts to interrupt a
burst-in-progress is ignored. The resulting benefit is
that the address rate is kept down to the clock fre-
quency even when both buses are 100 percent utilized.
PARTIAL WRITE Operations
BYTE WRITE operations are supported, except for
x8 devices in which nibble write is supported. The
active LOW write controls, BWx# (NWx#), are regis-
tered coincident with their corresponding data. This
feature can eliminate the need for some READ-MOD-
IFY-WRITE cycles, collapsing it to a single BYTE/NIB-
BLE WRITE operation in some instances.
18Mb: 1.8V V
DD
, HSTL, QDRIIb4 SRAM
MT54W1MH18J_H.fm – Rev. H, Pub. 3/03
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
2 MEG x 8, 1 MEG x 18, 512K x 36
1.8V V
DD
, HSTL, QDRIIb4 SRAM
Programmable Impedance Output
Buffer
The QDR SRAM is equipped with programmable
impedance output buffers. This allows a user to match
the driver impedance to the system. To adjust the
impedance, an external precision resistor (RQ) is con-
nected between the ZQ ball and V
SS
. The value of the
resistor must be five times the desired impedance. For
example, a 350
W
resistor is required for an output
impedance of 70
W
. To ensure that output impedance
is one-fifth the value of RQ (within 15 percent), the
range of RQ is 175
W
to 350
W
. Alternately, the ZQ ball
can be connected directly to V
DD
Q, which will place
the device in a minimum impedance mode.
Output impedance updates may be required
because over time variations may occur in supply volt-
age and temperature. The device samples the value of
RQ. Impedance updates are transparent to the system;
they do not affect device operation, and all data sheet
timing and current specifications are met during an
update.
The device will power up with an output impedance
set at 50
W
. To guarantee optimum output driver
impedance after power-up, the SRAM needs 1,024
cycles to update the impedance. The user can operate
the part with fewer than 1,024 clock cycles, but optimal
output impedance is not guaranteed.
automatically resets the DLL when the absence of
input clock is detected. See Micron Technical Note TN-
54-02 for more information on clock DLL start-up pro-
cedures.
Single Clock Mode
The SRAM can be used with the single K, K# clock
pair by tying C and C# HIGH. In this mode, the SRAM
will use K and K# in place of C and C#. This mode pro-
vides the most rapid data output but does not com-
pensate for system clock skew and flight times.
The output echo clocks are precise references to
output data. CQ and CQ# are both rising edge and fall-
ing edge accurate and are 180° out of phase. Either or
both may be used for output data capture. K or C rising
edge triggers CQ rising and CQ# falling edge. CQ rising
edge indicates first data response for QDRI and DDRI
(version 1, non-DLL) SRAM, while CQ# rising edge
indicates first data response for QDRII and DDRII (ver-
sion 2, DLL) SRAM.
Depth Expansion
Port select inputs are provided for the read and
write ports. This allows for easy depth expansion. Both
port selects are sampled on the rising edge of K only.
Each port can be independently selected and dese-
lected and does not affect the operation of the oppo-
site port. All pending transactions are completed prior
to a port deselect. Depth expansion requires replicat-
ing R# and W# control signals for each bank if it is
desired to have bank independent READ and WRITE
operations.
Clock Considerations
The device utilizes internal delay-locked loops for
maximum output, data valid window. It can be placed
into a stopped-clock state to minimize power with a
modest restart time of 1,024 clock cycles. Circuitry
18Mb: 1.8V V
DD
, HSTL, QDRIIb4 SRAM
MT54W1MH18J_H.fm – Rev. H, Pub. 3/03
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
2 MEG x 8, 1 MEG x 18, 512K x 36
1.8V V
DD
, HSTL, QDRIIb4 SRAM
Figure 2: Functional Block Diagram
2 Meg x 8; 1 Meg x 18; 512K x 36
n
n
ADDRESS
REGISTRY
& LOGIC
ADDRESS
R#
W#
K
W#
NWx# or BWx#
a
2a
DATA
REGISTRY
& LOGIC
WR
R E
I G
T
E 2
WD
R R
I I
T V
E E
R
2 xa
MEMORY
ARRAY
n
MUX
S
E A
NM
S P
E S
MUX
2a
RO
E U 3a
G T
P
AU
T
C
C,C#
or
K,K#
O
U
T
P
U
T
S
E
L
E
C
T
O
U
T
P
U
T
B
U
F
F
E
R
a
D (Data In)
R#
K
K#
2a
K
2a
Q
(Data Out)
2
CQ, CQ#
(Echo Clock Out)
NOTE:
1. Figure 2 illustrates simplified device operation. See truth table, ball descriptions, and timing diagrams for detailed
information.
2. For 2 Meg x 8, n = 21, a = 8; NWx# = 2 separate nibble writes.
For 1 Meg x 18, n = 20, a = 18; BWx# = 2 separate byte writes.
For 512K x 36, n = 19, a = 36; BWx# = 4 separate byte writes.
18Mb: 1.8V V
DD
, HSTL, QDRIIb4 SRAM
MT54W1MH18J_H.fm – Rev. H, Pub. 3/03
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2003 Micron Technology, Inc.
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