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MT49H16M16FM-33IT

产品描述DDR DRAM, 16MX16, CMOS, PBGA144, 11 X 18.50 MM, MICRO, BGA-144
产品类别存储    存储   
文件大小1MB,共40页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT49H16M16FM-33IT概述

DDR DRAM, 16MX16, CMOS, PBGA144, 11 X 18.50 MM, MICRO, BGA-144

MT49H16M16FM-33IT规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Micron Technology
零件包装代码BGA
包装说明11 X 18.50 MM, MICRO, BGA-144
针数144
Reach Compliance Codenot_compliant
ECCN代码EAR99
访问模式MULTI BANK PAGE BURST
其他特性AUTO REFRESH
最大时钟频率 (fCLK)300 MHz
I/O 类型COMMON
JESD-30 代码R-PBGA-B144
JESD-609代码e0
长度18.5 mm
内存密度268435456 bit
内存集成电路类型DDR DRAM
内存宽度16
功能数量1
端口数量1
端子数量144
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16MX16
输出特性3-STATE
封装主体材料PLASTIC/EPOXY
封装代码VBGA
封装等效代码BGA144,12X18,40/32
封装形状RECTANGULAR
封装形式GRID ARRAY, VERY THIN PROFILE
峰值回流温度(摄氏度)235
电源1.8,2.5 V
认证状态Not Qualified
座面最大高度0.93 mm
连续突发长度2,4
最大压摆率0.713 mA
最大供电电压 (Vsup)1.95 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间30
宽度11 mm

文档预览

下载PDF文档
256Mb: x16, x32 2.5V V
EXT
, 1.8V V
DD
, 1.8V V
DD
Q, RLDRAM
Features
Reduced Latency DRAM (RLDRAM )
MT49H8M32 – 1 Meg x 32 x 8 banks
MT49H16M16 – 2 Meg x 16 x 8 banks
For the latest data sheet, refer to Micron’s Web site: www.micron.com/products/dram/rldram/
®
Features
• Organization: 8 Meg x 32, 16 Meg x 16 in 8 banks
• Cyclic bank addressing for maximum data
bandwidth
• Non multiplexed addresses
• Non interruptible sequential burst of two (2-bit
prefetch) and four (4-bit prefetch) DDR
• Up to 600 Mb/sec/pin data rate
• Programmable READ latency (RL) of 5-6
• Data valid signal (DVLD) activated as read data is
available
• Data mask signals (DM0/DM1) to mask first and
• second part of write data burst
• IEEE 1149.1 compliant JTAG boundary scan
• 2.5V VEXT, 1.8V V
DD
, 1.8V V
DD
Q I/O
• Pseudo-HSTL 1.8V I/O Supply
• Internal auto precharge
• Refresh requirements: 32ms at 95°C case
temperature (8K refresh for each bank, 64K refresh
command must be issued in total each 32ms)
• 144-pin, 11mm x 18.5mm µBGA/FBGA package
Figure 1:
144-Ball FBGA
Table 1:
Valid Part Numbers
Part Number
Description
8 Meg x 32
16 Meg x 16
MT49H8M32HU-xx
MT49H16M16HU-xx
Options
• Clock Cycle Timing
3.3ns (300 MHz)
4ns (250 MHz)
5ns (200 MHz)
• Configuration
8 Meg x 32 (1 Meg x 32 x 8 banks)
16 Meg x 16 (2 Meg x 16 x 8 banks)
• Operating temperature range
Commercial:0° to +95°C
Industrial: T
C
= –40°C to +95°C
T
A
= –40°C to 85°C
• Package
144-ball, µBGA
144-ball, µBGA (Pb-Free)
144-ball, FBGA
144-ball, FBGA (Pb-Free)
Marking
-33
-4
-5
MT49H8M32
MT49H16M16
None
IT
The Micron
®
256Mb reduced latency DRAM
(RLDRAM
®
) contains 8 banks x32Mb of memory
accessible with 32-bit or 16-bit I/Os in a double data
rate (DDR) form at where the data is provided and syn-
chronized with a differential echo clock signal.
RLDRAM does not require row/column address multi-
plexing and is optimized for fast random access and
high-speed bandwidth.
RLDRAM is designed for high bandwidth communica-
tion data storage—telecommunications, networking,
and cache applications, etc.
General Description
FM
BM
1
HU
HT
1
Notes: 1. Contact factory for availability.
pdf: 09005aef81121545/source: 09005aef810c0ffc
256Mbx16x32RLDRAM_1.fm - Rev H 9/06 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2001 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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