MMBT3904LP
40V NPN SMALL SIGNAL TRANSISTOR IN DFN1006
Features
BV
CEO
> 40V
I
C
= 200mA High Collector Current
P
D
= 1000mW Power Dissipation
0.60mm
2
Package Footprint, 13 times Smaller than SOT23
0.5mm Height Package Minimizing Off-Board Profile
Complementary PNP Type MMBT3906LP
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. "Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
NiPdAu.
Solderable per MIL-STD-202, Method 208
e4
Weight: 0.0008 grams (Approximate)
C
X1-DFN1006-3
B
B
C
E
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information
(Note 4)
Product
MMBT3904LP-7
MMBT3904LP-7B
Notes:
Marking
1N
1N
Reel size (inches)
7
7
Tape width (mm)
8mm
8mm
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
1N
MMBT3904LP-7
Top View
Dot Denotes Collector Side
From date code 1527 (YYWW),
this changes to:
1N
Top View
Bar Denotes Base and Emitter Side
1N
1N
1N
MMBT3904LP-7B
Top View
Bar Denotes Base and Emitter Side
1N = Product Type Marking Code
1N
1N
1N
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
1 of 7
www.diodes.com
1N
1N
1N
1N
May 2015
© Diodes Incorporated
MMBT3904LP
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
60
40
6.0
200
200
Unit
V
V
V
mA
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage and Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 7)
Symbol
P
D
R
JA
R
JL
T
J
, T
STG
Value
400
1000
310
120
120
-55 to +150
Unit
mW
C/W
°C/W
°C
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
200
Unit
V
V
JEDEC Class
3A
B
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink.
6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
2 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3904LP
Thermal Characteristics
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 310°C/W
Duty Cycle, D = t1/ t2
0.0001
0.01
1
t1, PULSE DURATION TIME (sec)
Fig. 1 Transient Thermal Resistance
100
10,000
D = Single Pulse
0.001
0.000001
1,000
P
(PK)
, PEAK TRANSI ENT POI WER (W)
Single Pulse
R
JA
= 310°C/W
100
R
JA(t)
= r
(t)
* R
JA
T
J
- T
A
= P * R
JA(t)
10
1
0.1
1E-06
0.0001
0.01
1
100
10,000
t1, PULSE DURATION TIME (sec)
Fig. 2 Single Pulse Maximum Power Dissipation
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
3 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3904LP
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CEX
I
BL
Min
60
40
6.0
40
70
100
60
30
0.65
1.0
0.5
100
1.0
300
Max
50
50
300
0.20
0.30
0.85
0.95
4.0
8.5
10
8.0
400
40
35
35
200
50
Unit
V
V
V
nA
nA
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1.0mA, I
B
= 0
I
E
= 10µA, I
C
= 0
V
CE
= 30V, V
EB(OFF)
= 3.0V
V
CE
= 30V, V
EB(OFF)
= 3.0V
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= - 0.5V, I
B1
= 1.0mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON CHARACTERISTICS
(Note 9)
DC Current Gain
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
Current Gain-Bandwidth Product
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
Note:
V
CE(sat)
V
BE(sat)
C
obo
C
ibo
h
ie
h
re
h
fe
h
oe
f
T
t
d
t
r
t
s
t
f
V
V
pF
pF
kΩ
x 10
-4
µS
MHz
ns
ns
ns
ns
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
4 of 7
www.diodes.com
May 2015
© Diodes Incorporated
MMBT3904LP
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
0.14
0.12
I
C
, COLLECTOR CURRENT (A)
400
350
I
B
= 2mA
V
CE
= 1V
T
A
= 150°C
0.10
0.08
0.06
h
FE
, DC CURRENT GAIN
I
B
= 1.6mA
I
B
= 1.2mA
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
300
250
200
150
100
50
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.04
I
B
= 0.2mA
T
A
= -55°C
0.02
0
0
1
2
3
4
5
V
CE
, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 4 Typical Collector Current
vs. Collector-Emitter Voltage
0
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 5 Typical DC Current Gain vs. Collector Current
I
C
/I
B
= 20
I
C
/I
B
= 10
1
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
V
CE(SAT)
, COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
0.1
T
A
= 150°C
T
A
= 125°C
T
A
= 150°C
T
A
= 125°C
0.1
T
A
= 85°C
T
A
= -55°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 6 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0.01
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 7 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
V
BE(ON)
, BASE-EMITTER TURN-ON VOLTAGE (V)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
T
A
= 25°C
T
A
= 125°C
T
A
= 150°C
V
CE
= 5V
V
BE(SAT)
, BASE-EMITTER SATURATION VOLTAGE (V)
1.1
Gain = 10
1.0
0.9
0.8
0.7
T
A
= 125°C
T
A
= 150°C
0.6
T
A
= 85°C
T
A
= 85°C
0.5
T
A
= 25°C
0.4
0.3
1
T
A
= -55°C
0.4
0.3
T
A
= -55°C
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
10
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 9 Typical Base-Emitter Saturation Voltage
vs. Collector Current
1
MMBT3904LP
Document number: DS31835 Rev. 5 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
