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TD62S353AFM

产品描述IC 0.14 A BUF OR INV BASED PRPHL DRVR, PDSO6, 3 X 3 MM, 0.95 MM PITCH, HEAT SINK, PLASTIC, SON-6, Peripheral Driver
产品类别模拟混合信号IC    驱动程序和接口   
文件大小78KB,共7页
制造商Toshiba(东芝)
官网地址http://toshiba-semicon-storage.com/
下载文档 详细参数 全文预览

TD62S353AFM概述

IC 0.14 A BUF OR INV BASED PRPHL DRVR, PDSO6, 3 X 3 MM, 0.95 MM PITCH, HEAT SINK, PLASTIC, SON-6, Peripheral Driver

TD62S353AFM规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Toshiba(东芝)
零件包装代码SON
包装说明HVSON, SOLCC6,.13,38
针数6
Reach Compliance Codeunknown
ECCN代码EAR99
内置保护TRANSIENT
驱动器位数1
接口集成电路类型BUFFER OR INVERTER BASED PERIPHERAL DRIVER
JESD-30 代码R-PDSO-N6
JESD-609代码e0
长度2.9 mm
功能数量1
端子数量6
最高工作温度85 °C
最低工作温度-40 °C
输出电流流向SOURCE
最大输出电流0.14 A
标称输出峰值电流0.14 A
封装主体材料PLASTIC/EPOXY
封装代码HVSON
封装等效代码SOLCC6,.13,38
封装形状RECTANGULAR
封装形式SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
电源50 V
认证状态Not Qualified
座面最大高度0.9 mm
最大供电电压50 V
标称供电电压50 V
表面贴装YES
技术BIPOLAR
温度等级INDUSTRIAL
端子面层Tin/Lead (Sn/Pb)
端子形式NO LEAD
端子节距0.95 mm
端子位置DUAL
宽度2.8 mm

TD62S353AFM文档预览

TD62S353AFM
TOSHIBA Bipolar Digital Integrated Circuit
Silicon Monolithic
TD62S353AFM
1-Channel Darlington Source-Current Driver
The TD62S353AFM is a 1-channel non-inverting source-current
driver with a PNP transistor at the first stage and a NPN
Darlington transistor at the second stage.
The driver incorporates output clamp diodes used to clamp the
counter electromotive force which is generated when driving an
inductive load. Because the driver operates by source input
current, it is optimal for interfacing with sink-current driven
general-purpose CMOS logic ICs and microprocessors.
The driver is also optimal for driving relays and LEDs. When
using the driver, pay attention to the thermal conditions.
Features
·
·
·
·
·
·
Ultra-small HSON6 package with heat sink on rear
Large output voltage: V
OUT
=
−50
V (min)
Large output current: I
OUT
=
−500
mA (max)
Built-in output clamp diodes
Built-in input resistor: R
IN
= 14 kΩ
Input signal: Low Level Active
Weight: 0.017 g (typ.)
Pin Connection
(top view)
Basic Circuit Diagram
V
CC
OUTPUT
1
6
INPUT
INPUT
14 kW
TEST
V
CC
2
5
P-GND
10 k9
5 k9
3
4
NC
7 k9
TEST
OUTPUT
P-GND
Note 1: Diodes shown using dotted lines are parasitic. Do not use them.
Note 2: When using the driver, connect the OUTPUT pin to the TEST pin.
Note 3: When using the driver, connect the P-GND pin to the heat sink on the rear of the package.
1
2001-12-05
TD62S353AFM
Maximum Ratings
(Ta
=
25°C, V
CC
=
0 V)
Characteristics
Supply voltage
Output voltage
Collector-emitter voltage
Output current
Input voltage
Clamp diode reverse voltage
Clamp diode forward current
Power dissipation
Symbol
V
CC
-V
GND
V
OUT
V
CEO
I
OUT
V
IN
V
R
I
F
P
D
(Note 4)
R
th (j-a)
(Note 4)
Saturated thermal resistance
R
th (j-c)
(Note 5)
Operating temperature
Storage temperature
T
opr
T
stg
25
-40~85
-55~150
°C
°C
Rating
50
-50
50
-500
-30~0.5
50
500
0.78
160
°C/W
Unit
V
V
V
mA
V
V
mA
W
Note 4: 114.3
´
76.2
´
1.6 mm glass epoxy film substrate
Note 5: When an infinite heat sink is mounted.
Cu heat dissipation pattern 100 mm
2
Recommended Operating Condition
(Ta
= -
40~85°C, V
CC
=
0 V)
Characteristics
Supply voltage
Output voltage
Output current
Input voltage
Clamp diode reverse voltage
Clamp diode forward current
Symbol
V
CC
V
OUT
I
OUT
V
IN
V
R
I
F
Test Condition
¾
¾
Ta
=
60°C, T
j
=
105°C
¾
¾
¾
Min
0
0
¾
-30
¾
¾
Typ.
¾
¾
¾
¾
¾
¾
Max
50
-50
-140
0
50
400
Unit
V
V
mA
V
V
mA
2
2001-12-05
TD62S353AFM
Electrical Characteristics
(Ta
=
25°C, V
CC
=
0 V)
Characteristics
Output leakage current
Symbol
I
CEX
Test
Circuit
1
Test Condition
OUT
=
PGND
= -50
V
PGND
= -50
V, V
IN
= -2.8
V,
I
OUT
= -350
mA
PGND
= -50
V, V
IN
= -2.8
V,
I
OUT
= -140
mA
V
CE
=
3 V, I
OUT
= -350
mA
I
OUT
= -500 mA
V
CE
=
2 V, I
OUT
= -350
mA
V
CC
-
GND
=
5.5 V,
V
IN
=
GND
+
0.4 V
OUT
=
OPEN,
V
IN
=
V
CC
-
5 V,
V
CC
-
GND
=
50 V
V
R
=
50 V
I
F
=
350 mA
V
OUT
= -50
V, R
L
=
125
W,
C
L
=
15 pF
Min
¾
¾
¾
1000
-1.2
-30
¾
¾
¾
¾
¾
¾
Typ.
¾
-1.8
-1.5
¾
¾
¾
¾
¾
¾
¾
0.1
7.0
Max
-10
-2.0
V
-1.75
¾
0
-2.8
-0.45
-0.6
10
2.0
¾
¾
V
Unit
mA
Output saturation voltage
V
CE (sat)
2
DC current amplification ratio
Input voltage
h
FE
V
IN (OFF)
V
IN (ON)
2
4
¾
¾
5
6
7
Input current
I
IN (ON)
mA
Power dissipation
Clamp diode reverse voltage
Clamp diode forward current
Turn-on delay
Turn-off delay
I
CC (ON)
I
R
V
F
t
ON
t
OFF
mA
mA
V
ms
3
2001-12-05
TD62S353AFM
Test Circuit
1. I
CEX
V
CC
V
IN
V
OUT
I
CEX
V
SUB
I
IN
V
SUB
2. V
CE (sat)
, h
FE
V
CC
V
CE (sat)
I
OUT
I
h
FE
=
OUT
I
IN
3. I
IN (ON)
, I
IN (OFF)
V
CC
V
IN
I
IN (ON)
I
IN (OFF)
V
SUB
I
OUT
4. V
IN (ON)
, V
IN (OFF)
V
CC
V
IN (ON)
V
IN (OFF)
I
OUT
V
SUB
5. I
R
V
CC
6. V
F
OPEN
I
R
V
R
V
F
I
F
7. t
ON
, t
OFF
t
r
C
L
=
15 pF (Note 7)
OUTPUT
V
SUB
=
V
OUT
INPUT
90%
50%
10%
t
ON
10%
t
OFF
90%
OUTPUT
V
OL
t
f
0
90%
50%
-5
V
V
OH
Pulse
generator
(Note 6)
Note 6: Pulse width 50
ms,
Duty cycle 10%
Output impedance 50
W,
t
r
<
5 ns, t
f
<
10 ns
=
=
Note 7: C
L
includes probe and jig capacitance.
Caution on Application
1. The device does not include protectors such as an overcurrent protector and an overvoltage protector.
Applying excessive current or voltage may damage the device.
Thus, design with great care to prevent excessive current or voltage from being applied to the device.
The device may also be damaged by short-circuits between outputs and power supply/ground.
Take care when designing output, V
CC
and GND line.
2. Be sure to mount the device in the correct orientation. Make sure that the positive and negative
power supply pins are connected the right way round. Otherwise, the absolute maximum current
and power dissipation ratings may be exceeded and the device may break down or undergo
performance degradation, causing it to catch fire or explode, and resulting in injury.
4
2001-12-05
TD62S353AFM
Package Dimensions
Weight: 0.017 g (typ.)
5
2001-12-05

 
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