NCV8408
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 10 A, Single N−Channel, DPAK
NCV8408 is a single channel protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
Thermal protection includes a latch which can be reset by toggling the
input. This device is suitable for harsh automotive environments.
Features
V
DSS
(Clamped)
42 V
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I
D
MAX
(Limited)
10 A
Drain (2,4)
Overvoltage
Protection
R
DS(on)
TYP
55 mW @ 5 V
•
•
•
•
•
•
•
•
•
Short Circuit Protection
Thermal Shutdown with Latched Reset
Gate Input Current Flag During Latched Fault Condition
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
•
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Gate
Input (1)
ESD Protection
Temperature
Limit
Current
Limit
Current
Sense
Source (3)
4
1 2
MARKING
DIAGRAM
Gate
Drain
Source
YWW
V8408G
•
Switch a Variety of Resistive, Inductive and Capacitive Loads
•
Can Replace Electromechanical Relays and Discrete Circuits
•
Automotive / Industrial
3
DPAK
CASE 369C
STYLE 2
Drain
Y
= Year
WW
= Work Week
V8408 = Specific Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
NCV8408DTRKG
Package
DPAK
(Pb−Free)
Shipping
†
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2014
March, 2014
−
Rev. 4
1
Publication Order Number:
NCV8408/D
NCV8408
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Drain−to−Source Voltage Internally Clamped
Drain−to−Gate Voltage Internally Clamped
Gate−to−Source Voltage
Continuous Drain Current
Gate Input Current (V
GS
=
±14
V
DC
)
Source to Drain Current
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 3)
Single Pulse Inductive Load Switching Energy
(V
DD
= 20 Vdc, V
GS
= 5.0 V, I
L
= 8.0 A)
Repetitive Pulse Inductive Load Switching Energy
(V
DD
= 20 Vdc, V
GS
= 5.0 V, I
L
= 8.0 A, T
J
= 25°C)
Repetitive Pulse Inductive Load Switching Energy
(V
DD
= 20 Vdc, V
GS
= 5.0 V, I
L
= 6.8 A, T
J
= 105°C)
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0
W,
R
L
= 4.5
W,
t
d
= 400 ms, T
J
= 25°C)
Operating Junction Temperature
Storage Temperature
(R
GS
= 1.0 MW)
Symbol
V
DSS
V
DGR
V
GS
I
D
I
GS
I
SD
P
D
Value
42
42
±14
±10
4.0
1.8
2.3
70
55
2.1
185
128
92
63
−40
to 150
−55
to 150
V
°C
°C
Unit
Vdc
V
Vdc
mA
A
W
Internally Limited
R
qJA
R
qJA
R
qJT
E
AS
E
AR
E
AR
V
LD
T
J
T
stg
°C/W
mJ
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto minimum pad FR4 PCB (1 oz Cu, 0.06” thick).
2. Surface−mounted onto 2″ square FR4 PCB, (1″ square, 1 oz Cu, 0.06” thick).
3. Surface−mounted onto minimum pad FR4 PCB (2 oz Cu, 0.06” thick).
+
I
D
DRAIN
I
G
+
GATE
VDS
VGS
SOURCE
−
−
Figure 1. Voltage and Current Convention
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2
NCV8408
MOSFET ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage (Note 4)
(V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C)
(V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C) (Note 6)
(V
GS
= 0 V, I
D
= 10 mA, T
J
=
−40°C)
(Note 6)
Zero Gate Voltage Drain Current
(V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C)
(V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C) (Note 6)
INPUT CHARACTERISTICS
(Note 4)
Gate Input Current
−
Normal Operation
Gate Input Current
−
Protection Latched
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Latched Reset Voltage
Latched Reset Time
Internal Gate Input Resistance
ON CHARACTERISTICS
(Note 4)
Static Drain−to−Source On−Resistance
(V
GS
= 5.0 V, I
D
= 3.0 A, T
J
@ 25°C)
(V
GS
= 5.0 V, I
D
= 3.0 A, T
J
@ 150°C) (Note 6)
Source−Drain Forward On Voltage
Turn−OFF/ON Slew Rate
(V
GS
= 0 V, I
S
= 7.0 A)
V
GS
= 5.0 V, V
DS
= 13 V, R
L
= 4
W;
T
J
=
−40°C
T
J
= 150°C
T
J
= 25°C
−40°C
< T
J
< 150°C
SWITCHING CHARACTERISTICS
(Note 6)
T
Match
−15
−15
−5
−20
−
−
−
−
10
20
30
20
0.5
0.5
A
15
15
5
20
20
40
60
40
V/ms
%
R
DS(on)
−
−
−
55
100
0.95
60
120
−
mW
(Note 6)
(V
GS
= 5.0 V to V
GS
< 1 V) (Note 6)
(V
GS
= 5.0 V)
(V
GS
= 5.0 V) (Note 6)
(V
GS
= V
DS
, I
D
= 1 mA)
I
GSSF
I
GSSL
V
GS(th)
V
GS(th)
/T
J
V
LR
t
LR
−
−
1.0
−
0.8
10
−
25
440
1.7
5.0
1.4
40
25.5
50
−
2.2
−
1.9
100
−
mA
mA
V
−mV/°C
V
ms
kW
V
(BR)DSS
42
40
43
−
−
46
45
47
0.6
2.5
51
51
51
5.0
10
V
Test Conditions
Symbol
Min
Typ
Max
Unit
I
DSS
mA
V
SD
V
Turn−ON Delay Time
Rise Time (10% I
D
to 90% I
D
)
Turn−OFF Delay Time
Fall Time (90% I
D
to 10% I
D
)
Slew−Rate ON (90% V
D
to 10% V
D
)
Slew−Rate OFF (10% V
D
to 90% V
D
)
Current Limit
V
GS
= 5.0 V, V
DS
= 10 V, T
J
@ 25°C
V
GS
= 5.0 V, V
DS
= 10 V, T
J
= 150°C (Note 6)
V
GS
= 5.0 V, V
DS
= 10 V, T
J
=
−40°C
(Note 6)
Temperature Limit (Turn−off)
V
GS
= 5.0 V
V
GS
= 10 V
Human Body Model (HBM)
Machine Model (MM)
V
GS
= 5 V, V
DS
= 13 V
R
L
= 4
W,
−40°C
< T
J
< 150°C
t
d(ON)
t
r
t
d(OFF)
t
f
−dV
DS
/dt
ON
dV
DS
/dt
OFF
I
LIM
ms
SELF PROTECTION CHARACTERISTICS
(T
J
= 25°C unless otherwise noted) (Note 5)
10
10
9
150
150
4000
400
13
−
−
175
165
−
−
16
18
16
200
185
−
−
T
LIM(off)
°C
ESD ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability
Electro−Static Discharge Capability
ESD
ESD
V
V
4. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
6. Not subject to production testing.
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3
NCV8408
TEST CIRCUITS AND WAVEFORMS
RL
4
W
VIN
5V
0V
G
S
D
I
D
+
VDD
−
13 V
Figure 2. Resistive Load Switching Test Circuit
90%
VIN
10%
td(ON)
tr
td(OFF)
tf
90%
ID
10%
90%
VDS
10%
Figure 3. Resistive Load Switching Waveforms
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4
NCV8408
TEST CIRCUITS AND WAVEFORMS
L
VDS
VIN
RG
D
G DUT
S
VDD
+
−
tp
IDS
Figure 4. Inductive Load Switching Test Circuit
5V
VIN
T
av
T
p
V
(BR)DSS
I
pk
0V
VDS
VDD
V
DS(on)
IDS
0
Figure 5. Inductive Load Switching Waveforms
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5
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