PD - 97231A
PDP SWITCH
Features
l
Advanced Process Technology
l
Key Parameters Optimized for PDP
Sustain, Energy Recovery and Pass
Switch Applications
l
Low E
PULSE
Rating to Reduce Power
Dissipation in PDP Sustain, Energy
Recovery and Pass Switch Applications
l
Low Q
G
for Fast Response
l
High Repetitive Peak Current Capability for
Reliable Operation
l
Short Fall & Rise Times for Fast Switching
l
175°C Operating Junction Temperature for
Improved Ruggedness
l
Repetitive Avalanche Capability for
Robustness and Reliability
IRFS4228PbF
IRFSL4228PbF
Key Parameters
150
180
12
170
175
D
V
DS
min
V
DS (Avalanche)
typ.
R
DS(ON)
typ. @ 10V
I
RP
max @ T
C
= 100°C
T
J
max
D
V
V
m
:
A
°C
D
G
S
S
D
G
D
2
Pak
IRFS4228PbF
D
S
D
G
TO-262
IRFSL4228PbF
S
G
Gate
Drain
Source
Description
This
HEXFET
®
Power MOSFET
is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This
MOSFET
utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low E
PULSE
rating. Additional features of this
MOSFET
are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this
MOSFET
a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
I
RP
@ T
C
= 100°C
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Repetitive Peak Current
Power Dissipation
Power Dissipation
Max.
±30
83
59
330
170
330
170
2.2
-40 to + 175
300
10lb in (1.1N m)
Units
V
A
c
g
W
W/°C
°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
x
x
N
Units
°C/W
Thermal Resistance
R
θJC
R
θJA
Junction-to-Case
f
Parameter
Junction-to-Ambient (PCB Mount) , D
2
Pak
h
Typ.
–––
–––
Max.
0.45
*
40
* R
θJC
(end of life) for D
2
Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
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Notes
through
are on page 10
1
09/14/07
IRFS/SL4228PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
BV
DSS
∆ΒV
DSS
/∆T
J
R
DS(on)
V
GS(th)
∆V
GS(th)
/∆T
J
I
DSS
I
GSS
g
fs
Q
g
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
st
E
PULSE
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Shoot Through Blocking Time
Energy per Pulse
Min.
150
–––
–––
3.0
–––
–––
–––
–––
–––
170
–––
–––
–––
–––
–––
–––
100
–––
–––
Typ. Max. Units
–––
150
12
–––
-14
–––
–––
–––
–––
–––
71
21
18
59
24
33
–––
58
110
4530
550
100
480
4.5
7.5
–––
–––
15
5.0
–––
20
1.0
100
-100
–––
107
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nH
–––
pF
ns
µJ
Conditions
V
GS
= 0V, I
D
= 250µA
V
mV/°C Reference to 25°C, I
D
= 1mA
mΩ V
GS
= 10V, I
D
= 33A
V
V
DS
= V
GS
, I
D
= 250µA
e
mV/°C
µA V
DS
= 150V, V
GS
= 0V
mA V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
nA
S
nC
V
GS
= 20V
V
GS
= -20V
V
DS
= 25V, I
D
= 50A
V
DD
= 75V, I
D
= 50A, V
GS
= 10V
V
DD
= 75V, V
GS
= 10V
ns
I
D
= 50A
R
G
= 2.5Ω
See Fig. 22
V
DD
= 120V, V
GS
= 15V, R
G
= 5.1Ω
L = 220nH, C= 0.3µF, V
GS
= 15V
V
DS
= 120V, R
G
= 5.1Ω, T
J
= 25°C
L = 220nH, C= 0.3µF, V
GS
= 15V
V
DS
= 120V, R
G
= 5.1Ω, T
J
= 100°C
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
S
D
e
Ãe
C
iss
C
oss
C
rss
C
oss
eff.
L
D
L
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
–––
–––
Avalanche Characteristics
E
AS
E
AR
V
DS(Avalanche)
I
AS
d
Repetitive Avalanche Energy
Repetitive Avalanche Voltage
Ã
Avalanche Current
Ãd
Single Pulse Avalanche Energy
Parameter
Typ.
Max.
Units
mJ
mJ
V
A
–––
–––
180
–––
120
33
–––
50
Diode Characteristics
Parameter
I
S
@ T
C
= 25°C Continuous Source Current
I
SM
V
SD
t
rr
Q
rr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
–––
76
230
83
A
330
1.3
110
350
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 50A, V
GS
= 0V
T
J
= 25°C, I
F
= 50A, V
DD
= 50V
di/dt = 100A/µs
Ã
e
e
2
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IRFS/SL4228PbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
100
100
BOTTOM
1
5.0V
0.1
10
5.0V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
1
0.1
1
≤
60µs PULSE WIDTH
Tj = 175°C
10
100
1000
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
Fig 2.
Typical Output Characteristics
3.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
ID = 50A
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
≤60µs
PULSE WIDTH
0.1
3
4
5
6
7
8
9
10
11
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
120
110
100
L = 220nH
C = 0.3µF
100°C
25°C
VGS, Gate-to-Source Voltage (V)
Fig 4.
Normalized On-Resistance vs. Temperature
120
110
100
L = 220nH
C = Variable
100°C
25°C
Energy per Pulse (µJ)
Energy per Pulse (µJ)
100 105 110 115 120 125
90
80
70
60
50
40
30
20
85
90
80
70
60
50
40
30
20
10
90
95
60
65
70
75
80
85
90
95 100 105
Fig 5.
Typical E
PULSE
vs. Drain-to-Source Voltage
VDS, Drain-to-Source Voltage (V)
Fig 6.
Typical E
PULSE
vs. Drain Current
ID, Peak Drain Current (A)
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3
IRFS/SL4228PbF
140
L = 220nH
120
ISD, Reverse Drain Current (A)
1000
Energy per Pulse (µJ)
100
80
60
40
20
0
20
40
60
80
100
120
140
160
C = 0.1µF
C = 0.3µF
100
T J = 175°C
10
T J = 25°C
C = 0.2µF
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
Temperature (°C)
Fig 7.
Typical E
PULSE
vs.Temperature
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 8.
Typical Source-Drain Diode Forward Voltage
12.0
ID= 50A
VGS, Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
10000
C, Capacitance (pF)
VDS= 120V
VDS= 75V
VDS= 30V
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 9.
Typical Capacitance vs.Drain-to-Source Voltage
90
80
70
ID, Drain Current (A)
Fig 10.
Typical Gate Charge vs.Gate-to-Source Voltage
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T J , Junction Temperature (°C)
100
100µsec
10msec
1msec
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
Fig 11.
Maximum Drain Current vs. Case Temperature
Fig 12.
Maximum Safe Operating Area
4
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IRFS/SL4228PbF
RDS(on) , Drain-to -Source On Resistance (m
Ω)
60
500
EAS , Single Pulse Avalanche Energy (mJ)
ID = 50A
50
40
30
20
10
0
4
6
8
10
12
14
16
18
T J = 125°C
400
ID
TOP
13A
20A
BOTTOM 50A
300
200
100
TJ = 25°C
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 13.
On-Resistance vs. Gate Voltage
5.0
VGS(th) , Gate Threshold Voltage (V)
VGS, Gate -to -Source Voltage (V)
Fig 14.
Maximum Avalanche Energy vs. Temperature
250
ton= 1µs
Duty cycle = 0.25
Half Sine Wave
Square Pulse
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
-75 -50 -25
0
25 50 75 100 125 150 175
T J , Temperature ( °C )
0
25
50
75
100
Repetitive Peak Current (A)
200
ID = 250µA
150
100
50
125
150
175
Case Temperature (°C)
Fig 15.
Threshold Voltage vs. Temperature
1
Fig 16.
Typical Repetitive peak Current vs.
Case temperature
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
0.01
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τ
J
τ
J
τ
1
R
1
R
1
τ
2
R
2
R
2
R
3
R
3
τ
3
τ
C
τ
τ
3
Ri (°C/W)
τi
(sec)
0.0852 0.000052
0.1882
0.1769
0.000980
0.008365
τ
1
τ
2
Ci=
τi/Ri
Ci i/Ri
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
0.001
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 17.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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