Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
参数名称 | 属性值 |
厂商名称 | SAMSUNG(三星) |
零件包装代码 | TO-92 |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
针数 | 3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 1 A |
集电极-发射极最大电压 | 50 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 135 |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
元件数量 | 1 |
端子数量 | 3 |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | PNP |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
标称过渡频率 (fT) | 120 MHz |
KSB1116-Y | KSB1116-L | KSB1116A-G | KSB1116 | KSB1116A | KSB1116A-L | KSB1116A-Y | KSB1116-G | |
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描述 | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN | Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN |
包装说明 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
集电极-发射极最大电压 | 50 V | 50 V | 60 V | 50 V | 60 V | 60 V | 60 V | 50 V |
配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 135 | 300 | 200 | 81 | 81 | 300 | 135 | 200 |
JEDEC-95代码 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
JESD-30 代码 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
元件数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | PNP | PNP | PNP | PNP | PNP | PNP | PNP | PNP |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | NO | NO | NO | NO | NO | NO | NO |
端子形式 | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | WIRE | WIRE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
标称过渡频率 (fT) | 120 MHz | 120 MHz | 120 MHz | 120 MHz | 120 MHz | 120 MHz | 120 MHz | 120 MHz |
厂商名称 | SAMSUNG(三星) | SAMSUNG(三星) | - | - | - | SAMSUNG(三星) | SAMSUNG(三星) | SAMSUNG(三星) |
零件包装代码 | TO-92 | TO-92 | TO-92 | - | - | TO-92 | TO-92 | TO-92 |
针数 | 3 | 3 | 3 | - | - | 3 | 3 | 3 |
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