NDP610B概述

24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN

NDP610B规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Texas Instruments(德州仪器)
包装说明	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN代码	EAR99
配置	SINGLE
最小漏源击穿电压	100 V
最大漏极电流 (Abs) (ID)	24 A
最大漏极电流 (ID)	24 A
最大漏源导通电阻	0.08 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB
JESD-30 代码	R-PSFM-T3
JESD-609代码	e0
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	175 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	FLANGE MOUNT
极性/信道类型	N-CHANNEL
功耗环境最大值	100 W
最大功率耗散 (Abs)	100 W
认证状态	Not Qualified
表面贴装	NO
端子面层	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE
端子位置	SINGLE
晶体管元件材料	SILICON

NDP610B相似产品对比

	NDP610B	NDB610AE	NDP610A	NDP610AE	NDB610A	NDB610B	NDP610BE	NDB610BE
描述	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	26A, 100V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN	24A, 100V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合	不符合	不符合
包装说明	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小漏源击穿电压	100 V	100 V	100 V	100 V	100 V	100 V	100 V	100 V
最大漏极电流 (Abs) (ID)	24 A	26 A	26 A	26 A	26 A	24 A	24 A	24 A
最大漏极电流 (ID)	24 A	26 A	26 A	26 A	26 A	24 A	24 A	24 A
最大漏源导通电阻	0.08 Ω	0.065 Ω	0.065 Ω	0.065 Ω	0.065 Ω	0.08 Ω	0.08 Ω	0.08 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码	TO-220AB	TO-263AB	TO-220AB	TO-220AB	TO-263AB	TO-263AB	TO-220AB	TO-263AB
JESD-30 代码	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3	R-PSSO-G2	R-PSSO-G2	R-PSFM-T3	R-PSSO-G2
JESD-609代码	e0	e0	e0	e0	e0	e0	e0	e0
元件数量	1	1	1	1	1	1	1	1
端子数量	3	2	3	3	2	2	3	2
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT	SMALL OUTLINE	SMALL OUTLINE	FLANGE MOUNT	SMALL OUTLINE
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
功耗环境最大值	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W
最大功率耗散 (Abs)	100 W	100 W	100 W	100 W	100 W	100 W	100 W	100 W
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	YES	NO	NO	YES	YES	NO	YES
端子面层	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
端子形式	THROUGH-HOLE	GULL WING	THROUGH-HOLE	THROUGH-HOLE	GULL WING	GULL WING	THROUGH-HOLE	GULL WING
端子位置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
厂商名称	Texas Instruments(德州仪器)	-	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)	Texas Instruments(德州仪器)

NDP610B

NDP610B概述

NDP610B规格参数

NDP610B相似产品对比

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