32A, 80V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | Texas Instruments(德州仪器) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown |
| ECCN代码 | EAR99 |
| 配置 | SINGLE |
| 最小漏源击穿电压 | 80 V |
| 最大漏极电流 (Abs) (ID) | 32 A |
| 最大漏极电流 (ID) | 32 A |
| 最大漏源导通电阻 | 0.045 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 |
| JESD-609代码 | e0 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL |
| 功耗环境最大值 | 100 W |
| 最大功率耗散 (Abs) | 100 W |
| 认证状态 | Not Qualified |
| 表面贴装 | NO |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子位置 | SINGLE |
| 晶体管元件材料 | SILICON |
| NDP608B | NDB608AE | NDP608A | NDP608AE | NDP608BE | |
|---|---|---|---|---|---|
| 描述 | 32A, 80V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 36A, 80V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 36A, 80V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 36A, 80V, 0.042ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 32A, 80V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) | Texas Instruments(德州仪器) |
| 包装说明 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 最小漏源击穿电压 | 80 V | 80 V | 80 V | 80 V | 80 V |
| 最大漏极电流 (Abs) (ID) | 32 A | 36 A | 36 A | 36 A | 32 A |
| 最大漏极电流 (ID) | 32 A | 36 A | 36 A | 36 A | 32 A |
| 最大漏源导通电阻 | 0.045 Ω | 0.042 Ω | 0.042 Ω | 0.042 Ω | 0.045 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95代码 | TO-220AB | TO-263AB | TO-220AB | TO-220AB | TO-220AB |
| JESD-30 代码 | R-PSFM-T3 | R-PSSO-G2 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609代码 | e0 | e0 | e0 | e0 | e0 |
| 元件数量 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 3 | 2 | 3 | 3 | 3 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 最高工作温度 | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | FLANGE MOUNT | SMALL OUTLINE | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 功耗环境最大值 | 100 W | 100 W | 100 W | 100 W | 100 W |
| 最大功率耗散 (Abs) | 100 W | 100 W | 100 W | 100 W | 100 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | NO | YES | NO | NO | NO |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| 端子位置 | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | SILICON |
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