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KSR1212TA

产品描述Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN
产品类别分立半导体    晶体管   
文件大小56KB,共4页
制造商Fairchild
官网地址http://www.fairchildsemi.com/
下载文档 详细参数 选型对比 全文预览

KSR1212TA概述

Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN

KSR1212TA规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称Fairchild
零件包装代码TO-92S
包装说明IN-LINE, R-PSIP-T3
针数3
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性BUILT-IN BIAS RESISTOR
最大集电极电流 (IC)0.1 A
集电极-发射极最大电压40 V
配置SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)100
JESD-30 代码R-PSIP-T3
JESD-609代码e0
元件数量1
端子数量3
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式IN-LINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
最大功率耗散 (Abs)0.3 W
认证状态Not Qualified
表面贴装NO
端子面层Tin/Lead (Sn/Pb)
端子形式THROUGH-HOLE
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)250 MHz

KSR1212TA文档预览

KSR1212
KSR1212
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=47KΩ)
• Complement to KSR2212
1
TO-92S
1.Emitter 2. Collector 3. Base
Equivalent Circuit
C
R
B
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Value
40
40
5
100
300
150
-55 ~ 150
E
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
R
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Test Condition
I
C
=100µA, I
E
=0
I
E
=1mA, I
B
=0
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=10V, I
C
=5mA
32
3.7
250
47
62
100
Min.
40
40
0.1
600
0.3
V
pF
MHz
KΩ
Typ.
Max.
Units
V
V
µA
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSR1212
Package Demensions
TO-92S
4.00
±0.20
2.31
±0.20
0.66 MAX.
(1.10)
0.49
±0.10
1.27TYP
[1.27±0.20]
3.72
±0.20
1.27TYP
[1.27±0.20]
14.47
±0.30
3.70
±0.20
0.35
–0.05
+0.10
2.86
±0.20
0.77
±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
FAST
®
OPTOPLANAR™
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS™
EnSigna™
FACT™
FACT Quiet Series™
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MICROWIRE™
OPTOLOGIC™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
TinyLogic™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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KSR1212
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Switching Application (Bias Resister Built
Markets and
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applications
New products
q
Switchng circuit, Inverter, Interface
Product selection and
circuit, Driver Circuit
parametric search
q
Built in bias Resistor (R=47KΩ)
q
Complement to KSR2212
Cross-reference
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technical information
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Product
KSR1212BU
KSR1212TA
Product status
Full Production
Full Production
Pricing*
$0.053
$0.053
Package type
TO-92S
TO-92S
Leads
3
3
Packing method
BULK
TAPE REEL
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KSR1212TA相似产品对比

KSR1212TA KSR1212BU
描述 Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92S, 3 PIN
是否Rohs认证 不符合 不符合
厂商名称 Fairchild Fairchild
零件包装代码 TO-92S TO-92S
包装说明 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
针数 3 3
Reach Compliance Code unknown unknown
ECCN代码 EAR99 EAR99
其他特性 BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
最大集电极电流 (IC) 0.1 A 0.1 A
集电极-发射极最大电压 40 V 40 V
配置 SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE) 100 100
JESD-30 代码 R-PSIP-T3 R-PSIP-T3
JESD-609代码 e0 e0
元件数量 1 1
端子数量 3 3
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN
最大功率耗散 (Abs) 0.3 W 0.3 W
认证状态 Not Qualified Not Qualified
表面贴装 NO NO
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
标称过渡频率 (fT) 250 MHz 250 MHz

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