Freescale Semiconductor
Technical Data
Available at
http://freescale.com/RFMMIC > Design Support
> Reference Designs
Rev. 0, 2/2012
RF Power Reference Design
LTE 750 MHz Power Amplifier Lineup
InGaP HBT Driving GaAs pHEMT
Amplifier Lineup Characteristics
This reference design provides a
high-gain amplifier
solution, specifically
tuned for LTE and W--CDMA base station applications occupying the 725 to
760 MHz frequency band.
•
Typical Single--Carrier LTE Performance
•
GPA: V
CC
= 5 Vdc, I
CC
= 132 mAdc
•
Power GaAs FET: V
DD
= 12 Vdc, I
DQ
= 180 mA, V
GS
= --0.82 Vdc
•
Output Power: 1.0 Watts Avg.
•
10 MHz Channel Bandwidth @ 10 MHz Offset
•
Input Signal PAR = 10.5 dB @ 0.01% Probability on CCDF,
IQ Magnitude Clipping
Frequency
740 MHz
750 MHz
760 MHz
G
ps
(dB)
36.5
36.4
36.4
η
D
(%)
23.4
24.1
24.8
Output PAR
(dB)
9.0
9.0
8.9
ACPR
(dBc)
--40.3
--40.4
--40.4
MMG3014N
Driving
MRFG35010AN
LTE
725-
-760 MHz, 1.0 W AVG., 12 V
LTE AMPLIFIER LINEUP
REFERENCE DESIGN
•
Output Capable of Handling 3:1 VSWR, @ 12 Vdc, 750 MHz,
10 Watts CW Output Power
•
Designed for Digital Predistortion Error Correction Systems
MMG3014N/MRFG35010AN REFERENCE DESIGN
The amplifier lineup consists of a GaAs HBT pre--driver
and GaAs pHEMT driver amplifier, tuned for optimal gain,
efficiency, linearity and dynamic range performance at
1.0 Watts average output power. Performance
characteristics of the reference design are provided in this
document. Contact your local Freescale sales office or
authorized Freescale distributor for additional information on
reference design board availability for hands--on assessment
and customization.
V
DD
V
CC
V
GS
Bias
RF
OUTPUT
Matching
Bias
RF
INPUT
Input
Matching
Bias
MMG3014N
MRFG35010AN
Output
Matching
Matching
Figure 1. Functional Block Diagram
©
Freescale Semiconductor, Inc., 2012. All rights reserved.
MMG3014N Driving MRFG35010AN LTE
1
RF Reference Design Data
Freescale Semiconductor, Inc.
AMPLIFIER LINEUP TEST CONDITIONS
•
GPA: V
CC
= 5 Vdc, I
CC
= 132 mAdc
•
Power GaAs FET: V
DD
= 12 Vdc, I
DQ
= 180 mA,
V
GS
= --0.82 Vdc
•
Output Power: 1.0 Watts Avg.
•
IQ Magnitude Clipping
Note:
Refer to Appendix A for Power--up Sequence
AMPLIFIER LINEUP — ALTERNATE
CHARACTERISTICS
•
Typical Single--Carrier W--CDMA Performance
•
Measured in 3.84 MHz Channel Bandwidth
@ 5 MHz Offset
•
Input Signal PAR = 8.5 dB @ 0.01% Probability on CCDF
Frequency
740 MHz
750 MHz
760 MHz
G
ps
(dB)
36.4
36.3
36.3
η
D
(%)
23.8
24.5
25.2
Output PAR
(dB)
8.3
8.2
8.1
ACPR
(dBc)
--40.9
--41.0
--41.0
REFERENCE DESIGN HARDWARE
Figure 2. Performance Optimized Hardware
HEATSINKING
When operating this fixture it is important that adequate heatsinking
is provided for the device. Excessive heating of the device may
degrade the values of the included measurements and continued
operation at excessive temperatures may destroy the device.
MMG3014N Driving MRFG35010AN LTE Reference Design
2
RF Reference Design Data
Freescale Semiconductor, Inc.
--V
GS
C12 C11
C8 C7
C6
C5
C4
C3
+V
DS
C9
C13
C14
C15
C10
+V
CC
C21
RF
IN
L1
Q2
C2
R2
C17
Q1
C19
C20
C22
C23
C1
MMG3014N/MRFG35010AN
Rev. 1
Figure 3. MMG3014N Driving MRFG35010AN Board Layout
Table 1. MMG3014N Driving MRFG35010AN Test Circuit Component Designations and Values
Part
C1, C18
C2
C3, C16
C4, C15
C5, C14
C6, C13
C7, C12
C8, C11
C9, C10
C17
C19
C20
C21, C23
C22
C24
C25
L1
L2
Q1
Q2
R1
R2
PCB
Description
100 pF Chip Capacitors
22 pF Chip Capacitor
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
μF
Chip Capacitors
39K pF Chip Capacitor
22
μF,
35 V Tantalum Capacitors
12 pF Chip Capacitor
1.8 pF Chip Capacitor
8.2 pF Chip Capacitor
220 pF Chip Capacitors
5.6 pF Chip Capacitor
2.2
μF,
16 V Tantalum Capacitor
0.1
μF
Chip Capacitor
4.7 nH Chip Inductor
10 nH Chip Inductor
Power FET GaAs Transistor
InGaP HBT GPA
51
Ω,
1/8 W Chip Resistor
5.1
Ω,
1/4 W Chip Resistor
0.020″,
ε
r
= 3.5
Part Number
ATC600F101JT250XT
ATC600F220JT250XT
ATC100A100JP150XT
ATC100A101JP150XT
ATC100B101JP500XT
ATC100B102JP500XT
CDR33BX104AKYS
ATC200B393KP50XT
T491X226K035AT
ATC600F120JT250XT
ATC600F1R8BT250XT
ATC600F8R2BT250XT
C0805C221J5GAC
06035J5R6BBS
T491A225K016AS
C0603C104J5RAC
LL1608--FH4N7S
LL1608--FH10NJ
MRFG35010ANT1
MMG3014NT1
RM73BIJT510J
CRCW08055R10JNEA
RO4350B
ATC
ATC
ATC
ATC
ATC
ATC
Kemet
ATC
Kemet
ATC
ATC
ATC
Kemet
AVX
Kemet
Kemet
TOKO
TOKO
Freescale
Freescale
KOA Speer
Newark
Rogers
Manufacturer
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
3
RF
OUT
C24
C25
L2
C16
R1
C18
TYPICAL CHARACTERISTICS — 10 MHz LTE Test Signal
(Single--Carrier LTE, Test Model 1.1, 10 MHz, PAR = 10.5 dB @ 0.01% Probability on CCDF)
38
740 MHz
η
D
,
DRAIN EFFICIENCY (%)
37
G
ps
, POWER GAIN (dB)
760 MHz
750 MHz
30
760 MHz
40
750 MHz
36
20
740 MHz
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
14
19
24
P
out
, OUTPUT POWER (dBm)
29
34
35
34
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
14
19
24
P
out
, OUTPUT POWER (dBm)
29
34
10
0
Figure 4. Power Gain versus Output Power
--30
ACP, ADJACENT CHANNEL POWER (dBc)
PAR, PEAK--TO--AVERAGE RATIO (dB)
11
Figure 5. Drain Efficency versus Output Power
740 MHz
10
750 MHz
--36
740 MHz
--42
750 MHz
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
24
P
out
, OUTPUT POWER (dBm)
29
34
760 MHz
9
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
14
19
24
P
out
, OUTPUT POWER (dBm)
29
34
--48
760 MHz
--54
14
19
8
7
Figure 6. Adjacent Channel Power versus
Output Power
Figure 7. Peak- -Average Ratio versus
-to-
Output Power
10 MHz LTE TEST SIGNAL
100
10
PROBABILITY (%)
1
Input Signal
0.1
0.01
0.001
LTE. ACPR Measured in 10 MHz
Channel Bandwidth @
±10
MHz Offset.
Input Signal PAR = 10.5 dB @ 0.01%
Probability on CCDF
0
3
6
PEAK--TO--AVERAGE (dB)
9
12
(dB)
10
0
--10
--20
--30
--40
--50
--60
--70
--80
--90
--100
--25
--20
--15
--10
--5
0
5
10
15
20
25
--ACPR in 10 MHz
Integrated BW
+ACPR in 10 MHz
Integrated BW
10 MHz
Channel BW
Figure 8. CCDF LTE IQ Magnitude Clipping,
Single-
-Carrier Test Signal
MMG3014N Driving MRFG35010AN LTE Reference Design
4
f, FREQUENCY (MHz)
Figure 9. Single-
-Carrier LTE Spectrum
RF Reference Design Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 8.5 dB Input PAR W-
-CDMA Test Signal
(Single--Carrier W--CDMA, 3GPP Test Model 1, 64 DPCH, PAR = 8.5 dB @ 0.01% Probability on CCDF)
38
740 MHz
η
D
,
DRAIN EFFICIENCY (%)
40
740 MHz
37
G
ps
, POWER GAIN (dB)
30
760 MHz
36
750 MHz
760 MHz
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
14
19
24
P
out
, OUTPUT POWER (dBm)
29
34
20
750 MHz
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
14
19
24
P
out
, OUTPUT POWER (dBm)
29
34
35
10
34
0
Figure 10. Power Gain versus Output Power
--30
ACP, ADJACENT CHANNEL POWER (dBc)
PAR, PEAK--TO--AVERAGE RATIO (dB)
10
Figure 11. Drain Efficency versus Output Power
--36
9
760 MHz
750 MHz
740 MHz
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
14
19
24
P
out
, OUTPUT POWER (dBm)
29
34
--42
750 MHz
740 MHz
V
CC
= 5 Vdc
I
CC
= 132 mA
V
DD
= 12 Vdc
I
DQ
= 180 mA
V
GS
= --0.82 Vdc
24
P
out
, OUTPUT POWER (dBm)
29
34
8
--48
760 MHz
--54
14
19
7
6
Figure 12. Adjacent Channel Power versus
Output Power
Figure 13. Peak- -Average Ratio versus
-to-
Output Power
8.5 dB W-
-CDMA TEST SIGNAL
100
10
PROBABILITY (%)
1
0.1
0.01
0.001
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @
±5
MHz Offset.
Input Signal PAR = 8.5 dB @ 0.01%
Probability on CCDF
0
3
6
PEAK--TO--AVERAGE (dB)
9
12
10
0
--10
--20
Input Signal
(dB)
--30
--40
--50
--60
--70
--80
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8 3.6
f, FREQUENCY (MHz)
5.4
7.2
9
--ACPR in 3.84 MHz
Integrated BW
+ACPR in 3.84 MHz
Integrated BW
3.84 MHz
Channel BW
Figure 14. CCDF W-
-CDMA IQ Magnitude
Clipping, Single-
-Carrier Test Signal
Figure 15. Single-
-Carrier W-
-CDMA Spectrum
MMG3014N Driving MRFG35010AN LTE Reference Design
RF Reference Design Data
Freescale Semiconductor, Inc.
5
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