DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D123
BFG520W; BFG520W/X
NPN 9 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Oct 02
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures excellent reliability.
APPLICATIONS
RF front end wideband applications in the GHz range,
such as analog and digital cellular telephones, cordless
telephones (CT2, CT3, PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners (SATV) and repeater
amplifiers in fibre-optic systems.
PINNING
DESCRIPTION
PIN
BFG250W
1
2
3
4
collector
base
emitter
emitter
BFG250W/X
collector
emitter
base
emitter
handbook, halfpage
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT343N plastic package.
1
2
MBK523
MARKING
TYPE NUMBER
BFG520W
BFG520W/X
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
|S
21
|
2
F
PARAMETER
collector-base voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
noise figure
T
s
≤
85
°C
I
C
= 20 mA; V
CE
= 6 V
I
C
= 0; V
CB
= 6 V; f = 1 MHz
open emitter
collector-emitter voltage R
BE
= 0
CONDITIONS
CODE
N3
N4
Top view
Fig.1 Simplified outline SOT343N.
MIN.
−
−
−
−
60
−
−
TYP. MAX. UNIT
−
−
−
−
120
0.35
9
17
17
1.1
20
15
70
500
250
−
−
−
−
1.6
pF
GHz
dB
dB
dB
V
V
mA
mW
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz; T
amb
= 25
°C
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz; T
amb
= 25
°C −
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz; T
amb
= 25
°C
16
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 6 V; f = 900 MHz
−
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
Note
1. T
s
is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. T
s
is the temperature at the soldering point of the collector pin.
PARAMETER
thermal resistance from junction to soldering point
CONDITIONS
T
s
≤
85
°C;
note 1
VALUE
180
UNIT
K/W
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
T
s
≤
85
°C;
see Fig.2; note 1
R
BE
= 0
open collector
CONDITIONS
open emitter
−
−
−
−
−
−65
−
MIN.
MAX.
20
15
2.5
70
500
+150
175
V
V
V
mA
mW
°C
°C
UNIT
handbook, halfpage
600
MBG248
P tot
(mW)
400
200
0
0
50
100
150
T s ( C)
o
200
Fig.2 Power derating curve.
1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)CBO
V
(BR)CES
V
(BR)EBO
I
CBO
h
FE
C
re
f
T
G
UM
PARAMETER
collector-base breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
feedback capacitance
transition frequency
maximum unilateral power gain;
note 1
CONDITIONS
I
C
=10
µA;
I
E
= 0
I
E
= 10
µA;
I
C
= 0
V
CB
= 6 V; I
E
= 0
I
C
= 20 mA; V
CE
= 6 V; see Fig.3
I
C
= 0; V
CB
= 6 V; f = 1 MHz;
see Fig.4
I
C
= 20 mA; V
CE
= 6 V; f = 1 GHz;
T
amb
= 25
°C;
see Fig.5
MIN.
20
15
2.5
−
60
−
−
TYP.
−
−
−
−
120
0.35
9
17
11
17
1.1
1.6
1.85
17
26
275
−50
MAX.
−
−
−
50
250
−
−
−
−
−
1.6
2.1
−
−
−
−
−
pF
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
mV
dB
UNIT
V
V
V
nA
collector-emitter breakdown voltage I
C
= 10
µA;
R
BE
= 0
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
−
T
amb
= 25
°C
I
C
= 20 mA; V
CE
= 6 V; f = 2 GHz;
T
amb
= 25
°C
−
|S
21
|
2
F
insertion power gain
noise figure
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz; 16
T
amb
= 25
°C
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 20 mA; V
CE
= 6 V;
f = 900 MHz
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
= 6 V;
f = 2 GHz
−
−
−
P
L1
ITO
V
o
d
2
Notes
output power at 1 dB gain
compression
third order intercept point
output voltage
second order intermodulation
distortion
I
C
= 20 mA; V
CE
= 6 V; f = 900 MHz;
−
R
L
= 50
Ω;
T
amb
= 25
°C
note 2
note 3
note 4
−
−
−
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero. G
UM
2. I
C
= 20 mA; V
CE
= 6 V; R
L
= 50
Ω;
T
amb
= 25
°C;
f
p
= 900 MHz; f
q
= 902 MHz; measured at 2f
p
−
f
q
= 898 MHz and 2f
q
−
f
p
= 904 MHz.
S
21 2
=
10 log -------------------------------------------------------------- dB.
(
1
–
S
11 2
) (
1
–
S
22 2
)
3. d
im
=
−60
dB (DIN45004B); I
C
= 20 mA; V
CE
= 6 V; V
p
= V
o
; V
q
= V
o
−6
dB; V
r
= V
o
−6
dB; R
L
= 75
Ω;
f
p
= 795.25 MHz; f
q
= 803.25 MHz; f
r
= 805.25 MHz; measured at f
p
+ f
q
−
f
r
= 793.25 MHz.
4. I
C
= 20 mA; V
CE
= 6 V; V
o
= 75 mV; R
L
= 75
Ω;
T
amb
= 25
°C;
f
p
= 250 MHz; f
q
= 560 MHz; measured at f
p
+ f
q
= 810 MHz.
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistors
BFG520W; BFG520W/X
MLB807
handbook, halfpage
150
handbook, halfpage
0.6
MLB808
h FE
C re
(pF)
0.4
100
50
0.2
0
10
1
0
1
10
I C (mA)
10
2
0
2.5
5
7.5
VCB (V)
10
V
CE
= 6 V.
I
C
= 0; f = 1 MHz.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.4
Feedback capacitance as a function of
collector-base voltage; typical values.
handbook, halfpage
12
MLB809
fT
(GHz)
8
V CE =
6V
3V
4
0
1
10
I C (mA)
10
2
f = 1 GHz; T
amb
= 25
°C.
Fig.5
Transition frequency as a function of
collector current; typical values.
1998 Oct 02
5
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