KSC1009
KSC1009
High Voltage Amplifier
•
•
•
•
•
High Collector-Base Voltage : V
CBO
=160V
Collector Current : I
C
=700mA
Collector Power Dissipation : P
C
=800mW
Complement to KSA709
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
1
TO-92
1. Emitter 2. Base 3. Collector
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Parameter
Ratings
160
140
8
700
800
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Test Condition
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=200mA, I
B
=20mA
I
C
=200mA, I
B
=20mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
30
40
0.2
0.86
50
8
Min.
160
140
8
0.1
0.1
400
0.7
1.0
V
V
MHz
pF
Typ.
Max.
Units
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
G
200 ~ 400
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC1009
Typical Characteristics
100
90
I
B
=0.8mA
I
B
=0.6mA
I
B
=0.4mA
1000
V
CE
= 5V
I
C
[mA], COLLECTOR CURRENT
80
70
60
50
40
30
h
FE
, DC CURRENT GAIN
10
100
10
I
B
=0.2mA
20
10
0
0
2
4
6
8
1
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
=10I
B
V
CE
=2V
V
BE
(sat)
1
I
C
[mA], COLLECTOR CURRENT
100
1000
100
V
CE
(sat)
0.1
10
0.01
1
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
f=1MHz
I
E
=0
C
ob
[pF],CAPACTIANCE
10
1
1
10
100
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC1009
Package Demensions
TO-92
4.58
–0.15
+0.25
0.46
14.47
±0.40
±0.10
4.58
±0.20
1.27TYP
[1.27
±0.20
]
3.60
±0.20
1.27TYP
[1.27
±0.20
]
0.38
–0.05
+0.10
3.86MAX
1.02
±0.10
0.38
–0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
STAR*POWER™
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®
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E
2
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®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SLIENT SWITCHER
®
SMART START™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TruTranslation™
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UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
2. A critical component is any component of a life support
1. Life support devices or systems are devices or systems
device or system whose failure to perform can be
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2001 Fairchild Semiconductor Corporation
Rev. H3
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NPN Epitaxial Silicon Transistor
Contents
•Features
•Applications
•Product
status/pricing/packaging
•Order
Samples
Features
High Collector-Base Voltage : V
C
=160V
Collector Current : I
C
=700mA
Collector Dissipation : P
C
=800mW
Complement to KSA709
Suffix “-C” means Center Collector (1. Emitter 2. Collector 3. Base)
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Applications
High Voltage Amplifier
back to top
Product status/pricing/packaging
Product
KSC1009CYBU
Product status
Full Production
Pb-free Status
Pricing*
$0.0296
Package type
TO-92
Leads
3
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KSC1009
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Packing method
BULK
Package Marking Convention**
Line 1: C1009 Line 3: YC&3
KSC1009CYTA
Full Production
$0.0296
TO-92
3
AMMO
Line 1: C1009 Line 3: YC&3
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