CYStech Electronics Corp.
3.0Amp. Surface Mount Schottky Barrier Diodes
Spec. No. : C330SB
Issued Date : 2003.04.09
Revised Date :2011.01.28
Page No. : 1/6
SK32SB thru SK3BSB
Features
•
For surface mounted applications.
•
For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.
•
Plastic material used carries Underwriters Laboratory Flammability Classification 94V-0.
•
Low leakage current.
•
High surge capability.
•
High temperature soldering: 250°C/10 seconds at terminals.
•
Exceeds environmental standards of MIL-S-19500/228.
Mechanical Data
•
Case: Molded plastic, JEDEC DO-214AA/SMB.
•
Terminals: Solder plated, solderable per MIL-STD-750 method 2026.
•
Polarity: Indicated by cathode band.
•
Mounting position: Any.
•
Weight: 0.093 gram.
Maximum Ratings and Electrical Characteristics
(
Rating at 25°C ambient temperature unless otherwise specified. )
Parameter
Repetitive peak reverse
voltage
Maximum RMS voltage
Maximum DC blocking
voltage
Maximum instantaneous
forward voltage
Maximum average forward
rectified current
Peak forward surge current
Maximum DC reverse current
Maximum thermal resistance,
Junction to ambient
(Note 2)
Diode junction capacitance
Storage temperature
Operating temperature
f=1MHz and applied 4V
reverse voltage
Conditions
Symbols
V
RRM
V
RMS
V
R
I
F
=3A
(Note 1)
V
F
I
O
8.3ms single half sine wave
superimposed on rated
load (JEDEC method)
V
R
=V
RRM
,T
A
=25
℃
(Note 1)
V
R
=V
RRM
,T
A
=125
℃
(Note 1)
I
FSM
I
R
R
th,JA
C
J
Tstg
T
J
SK32 SK33 SK34 SK36 SK3B
Units
SB
SB
SB
SB
SB
20
14
20
0.475
30
21
30
0.5
40
28
40
0.5
3
100
0.5
20
40 (typ)
50 (typ)
-65~+150
-55~+125
-55~+150
60
42
60
0.7
100
70
100
0.85
V
V
V
V
A
A
mA
mA
℃
/W
pF
℃
℃
Notes : 1.Pulse test, pulse width=300μsec, 2% duty cycle
2.Mounted on PCB with 0.2”×0.2”mm² (0.5mm×0.5mm) copper pad area.
SK32SB thru SK3BSB
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Forward Current Derating Curve
3.5
Spec. No. : C330SB
Issued Date : 2003.04.09
Revised Date :2011.01.28
Page No. : 2/6
Maximum Non-Repetitive Forward
Surge Current
120
Peak Forward Surge Current---
I
FSM
(A)
Average Forward Current---Io(A)
3
2.5
2
1.5
1
0.5
0
0
50
100
SK32-34
SK36-3B
100
80
60
40
20
0
Tj=25℃, 8.3ms
Single Half Sine Wave,
JEDEC method
150
200
1
10
Numbers of Cycles at 60Hz
100
Ambient Temperature---TA(℃)
Forward Current vs Forward Voltage
100
SK32-34
Junction Capacitance vs Reverse Voltage
140
Forward Current---IF(A)
10
SK36
Junction Capacitance---C
J
(pF)
120
100
80
60
40
20
0
1
SK3B
0.1
Tj=25℃, Pulse width=300μs,
1% Duty cycle
0.01
0.1
0.3
0.5
0.7
0.9
1.1
Forward Voltage---VF(V)
1.3
1.5
0.01
0.1
Reverse Voltage---V
R
(V)
1
10
100
Reverse Leakage Current vs Reverse Voltage
100
Reverse Leakage Current---IR(mA)
10
1
Tj=75℃
0.1
Tj=25℃
0.01
0
20
40
60
80
100 120 140
Percentage of Rated Peak
Reverse Voltage---(%)
SK32SB thru SK3BSB
CYStek Product Specification
CYStech Electronics Corp.
Recommended temperature profile for IR reflow
Spec. No. : C330SB
Issued Date : 2003.04.09
Revised Date :2011.01.28
Page No. : 4/6
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak
temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
SK32SB thru SK3BSB
CYStek Product Specification
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