SUM33N20-60P
New Product
Vishay Siliconix
N-Channel 200-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
(BR)DSS
(V)
200
r
DS(on)
(Ω)
0.059 at V
GS
= 15 V
0.060 at V
GS
= 10 V
I
D
(A)
33
33
Q
g
(Typ)
53
FEATURES
• TrenchFET
®
Power MOSFETS
• 150 °C Junction Temperature
• 100 % UIS and R
g
Tested
RoHS
COMPLIANT
APPLICATIONS
• Power Supply
• Lighting
• Industrial
D
TO-263
G
G
D
S
S
N-Channel MOSFET
Top View
Ordering Information:
SUM33N20-60P-E3
(Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
Pulsed Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power
Dissipation
a
a
Symbol
V
DS
V
GS
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
c
I
AS
E
AS
P
D
T
J
, T
stg
Limit
200
± 25
33
20.8
80
20
20
156
b
3.12
- 55 to 175
Unit
V
A
mJ
W
°C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient (PCB Mount)
Junction-to-Case (Drain)
Notes:
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
c
Symbol
R
thJA
R
thJC
Limit
40
0.8
Unit
°C/W
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
www.vishay.com
1
SUM33N20-60P
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
DS
= 0 V, I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 0 V, V
GS
= ± 25 V
V
DS
= 200 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
On-State Drain Current
a
I
DSS
I
D(on)
V
DS
= 200 V, V
GS
= 0 V, T
J
= 100 °C
V
DS
= 200 V, V
GS
= 0 V, T
J
= 150 °C
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 15 V, I
D
= 20 A
V
GS
= 10 V, I
D
= 20 A, T
J
= 100 °C
V
GS
= 10 V, I
D
= 20 A, T
J
= 150 °C
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
Fall Time
c
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
c
c
Symbol
Test Conditions
Min
200
2.5
Typ
Max
Unit
4.5
± 100
± 300
1
25
250
V
nA
µA
A
40
0.049
0.0485
0.060
0.059
0.110
0.144
25
2735
Ω
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
t
a
t
b
V
DS
= 15 V, I
D
= 20 A
S
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
V
DS
= 100 V, V
GS
= 15 V, I
D
= 50 A
V
DS
= 100 V, V
GS
= 10 V, I
D
= 50 A
f = 1 MHz
V
DD
= 100 V, R
L
= 2
Ω
I
D
≅
50 A, V
GEN
= 10 V, R
g
= 1
Ω
271
117
75
53
14
17.5
1.2
16
170
26
9
1.8
25
260
40
18
33
80
113
80
pF
nC
Ω
ns
Source-Drain Diode Ratings and Characteristics
(T
C
= 25 °C)
b
A
V
ns
A
µC
nS
I
F
= 20 A, V
GS
= 0 V
0.86
114
8
1.5
170
12
0.69
I
F
= 40 A, di/dt = 100 A/µs
0.46
82
32
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
SUM33N20-60P
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless noted
100
80
80
I
D
- Dr
a
in C
u
rrent (A)
V
GS
= 15, 12, 10,
8,
6 V
I
D
- Dr
a
in C
u
rrent (A)
64
60
48
40
32
T
C
= 125 °C
16
25 °C
20
5V
- 55 °C
0
0
3
6
9
12
15
0
0
2
4
6
8
10
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
120
0.080
Transfer Characteristics
100
g
f
s
- Transconductance (S)
T
C
= - 55 °C
80
25 °C
r
D
S
(on)
- On-Resistance (Ω)
0.070
60
125 °C
0.060
V
GS
= 10 V
V
GS
= 15 V
0.050
40
20
0
0
10
20
30
40
50
60
0.040
0
16
32
48
64
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
Transconductance
0.19
I
D
= 20 A
r
D
S(on)
- On-Resistance (Ω)
0.16
C - Capacitance (pF)
3040
3800
On-Resistance vs. Drain Current
C
iss
0.13
125 °C
0.10
2280
1520
0.07
25 °C
0.04
0
3
6
9
12
15
760
C
rss
C
oss
0
0
20
40
60
80
100
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
Capacitance
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SUM33N20-60P
Vishay Siliconix
TYPICAL CHARACTERISTICS
15
V
DS
= 50 V, 100 V, 150V
I
D
= 50 A
r
D
S
(on)
- On-Resistance
(Norm
a
lized)
25 °C, unless noted
2.9
I
D
= 20 A
2.4
V
GS
= 10 V
1.9
V
GS
= 15 V
1.4
V
G
S
- G
a
te-to-
S
o
u
rce Voltage (V)
12
9
6
3
0.9
0
0
16
32
48
64
80
0.4
- 50
- 25
0
25
50
75
100
125
150
175
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
100
0.7
On-Resistance vs. Junction Temperature
10
I
S
-
Source
Current (A)
V
G
S
(th)
V
a
ri
a
nce (V)
0.2
1
T
J
=150 °C
- 0.3
I
D
= 5 mA
- 0.8
I
D
= 250
µA
0.1
T
J
= 25 °C
- 1.3
0.01
- 1.8
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
- 2.3
- 50
- 25
0
25
50
75
100
125
150
175
V
SD
-
Source-to-Drain
Voltage
T
J
- Temperature (°C)
Source-Drain Diode Forward Voltage
250
100
Threshold Voltage
240
V
(BR)DSS (normalized)
I
D
= 10 mA
230
I
Dav
A
10
150 °C
25 °C
220
210
200
1
0.00001
190
- 50
- 25
0
25
50
75
100
125
150
175
0.0001
0.001
t
av
- (Sec)
0.01
0.1
T
J
- Junction Temperature (°C)
Drain Source Breakdown vs.
Junction Temperature
Single Pulse Avalanche
Current Capability vs. Time
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Document Number: 74291
S-62209-Rev. A, 30-Oct-06
SUM33N20-60P
Vishay Siliconix
THERMAL RATINGS
40
100
*Limited
by
r
DS (on)
32
100
µs
I
D
- Dr
a
in C
u
rrent (A)
I
D
- Drain Current (A)
10
24
1 ms
T
C
= 25 °C
Single
Pulse
1
10 ms
100 ms
DC
16
8
0
0
25
50
75
100
125
150
0.1
0.1
T
C
- Case Temperature (°C)
100
1
10
1000
V
DS
- Drain-to-Source Voltage (V)
*V
GS
>
minimum V
GS
at
which r
DS (on)
is
specified
Maximum Drain Curent vs.
Case Temperature
1
Duty Cycle = 0.5
Safe Operating Area
Normalized Effective Transient
Thermal Impedance
0.2
0 .1
0.1
0.05
0.02
Single Pulse
0.01
10-
4
10-
3
10-
2
Square Wave Pulse Duration (sec)
10-
1
1
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see
http://www.vishay.com/ppg?74291
Document Number: 74291
S-62209-Rev. A, 30-Oct-06
www.vishay.com
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