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SMF6.0A

产品描述1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB
产品类别半导体    分立半导体   
文件大小261KB,共5页
制造商CYSTEKEC
官网地址http://www.cystekec.com/
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SMF6.0A概述

1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB

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CYStech Electronics Corp.
Surface Mount Transient Voltage Suppressors
Peak Pulse Power 200W Working Voltage 5.0 to 190V
Spec. No. : C296SP
Issued Date : 2011.06.20
Revised Date :
Page No. : 1/5
SMF5.0A thru SMF190CA
Features
Glass passivated chip
Uni and Bidirectional unit
Excellent clamping capability
200W peak pulse power capability with a 10/1000μs waveform, repetition rate (duty cycle) : 0.01%
Very-fast response time
Low leakage
RoHS compliant
Mechanical Data
Case : Molded plastic
Terminals: Pure tin plated, solderable per MIL-STD-750 method 2026
Polarity: For uni-directional types, the band denotes the cathode, which is positive with respective to the anode
under normal TVS operation
Mounting position : Any
Epoxy: UL 94V-0 rate flame retardant
Devices for bidirectional applications
For bi-directional devices, use suffix CA (e.g. SMF10CA). Electrical characteristics apply in both directions.
Maximum Ratings and Characteristics
(T
A
=25°C, unless otherwise noted)
Parameter
Peak pulse power dissipation with a 10/1000μs waveform
(Note 1)
Peak pulse power dissipation with a 8/20μs waveform
(Note 1)
Peak pulse current with a 10/1000μs waveform
(Note 1)
Peak forward surge current, 8.3ms single half sine wave
uni-directional only
(Note 2)
Power dissipation on infinite heatsink at T
L
=75°C
Maximum instantaneous forward voltage at 25A for
unidirectional only
(Note 4)
Operating junction and storage temperature range
Symbol
P
PP
P
PP
I
PP
I
FSM
P
D
V
F
T
J
;T
STG
Value
200
1000
See next table
20
0.4
3.5
-55 ~ +150
Unit
W
W
A
A
W
V
°C
Notes: 1.Non-repetitive current pulse, per Fig. 5 and derated above T
A
=25°C per Fig. 1.
2.Mounted on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum.
SMF5.0A thru SMBJ190CA
CYStek Product Specification

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