TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/371
Devices
2N3902
2N5157
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
V
CEO
V
EBO
V
CBO
I
B
I
C
P
T
T
j,
T
stg
Symbol
0
@ T
A
= +25
0
C
(1)
@ T
C
= +75
0
C
(2)
Operating & Storage Temperature Range
2N3902 2N5157
400
500
5.0
6.0
700
2.0
3.5
5.0
100
-65 to +200
Max.
1.25
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
Unit
C/W
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 29 mW/ C for T
A
> +25 C
2) Derate linearly 0.8 W/
0
C for T
C
> +75
0
C
*See Appendix A for Package
Outline
0
TO-3 (TO-204AA)*
R
θ
JC
0
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
V
CE
= 325 Vdc
V
CE
= 400 Vdc
Collector-Emitter Cutoff Current
V
BE
= 1.5 Vdc; V
CE
= 700 Vdc
Emitter-Base Cutoff Current
V
EB
= 5.0 Vdc
V
EB
= 6.0 Vdc
2N3902
2N5157
I
CEO
I
CEX
2N3902
2N5157
I
EBO
250
250
500
200
200
µAdc
µAdc
µAdc
ON CHARACTERISTICS
(3)
Base-Emitter Saturation Voltage
I
C
= 1.0 Adc; I
B
= 0.1 Adc
I
C
= 3.5 Adc; I
B
= 0.7 Adc
Collector-Emitter Saturation Voltage
I
C
= 1.0 Adc; I
B
= 0.1 Adc
I
C
= 3.5 Adc; I
B
= 0.7 Adc
V
BE(sat)
1.5
2.0
0.8
2.5
Vdc
V
CE(sat)
Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N3902, 2N5157 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
Symbol
Min.
Max.
Unit
ON CHARACTERISTICS
(3)
(con’t)
25
30
10
5
325
400
2.5
25
250
pF
Forward-Current Transfer Ratio
I
C
= 0.5 Adc; V
CE
= 5.0 Vdc
I
C
= 1.0 Adc; V
CE
= 5.0 Vdc
I
C
= 2.5 Adc; V
CE
= 5.0 Vdc
I
C
= 3.5 Adc; V
CE
= 5.0 Vdc
Collector-Emitter Sustaining Voltage
I
C
= 100 mAdc
h
FE
90
2N3902
2N5157
V
CEO(sus)
Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short-Circuit Forward Current Transfer Ratio
I
C
= 0.2 Adc; V
CE
= 10 Vdc, f = 1 MHz
Output Capacitance
V
CB
= 10 Vdc; I
E
= 0, 100 kHz
≤
f
≤
1.0 MHz
h
fe
C
obo
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 125 Vdc; I
C
= 1.0 Adc; I
B1
= 0.1 Adc
Turn-Off Time
V
CC
= 125 Vdc; I
C
= 1.0 Adc; I
B1
= 0.1 Adc; -
I
B2
= 0.50 Adc
t
on
0.8
1.7
µs
µs
t
off
SAFE OPERATING AREA
DC Tests (continuous)
T
C
= +25
0
C; t
≥
1.0 s (See Figure 3 of MIL-PRF-19500/371)
Test 1
V
CE
= 28.6 Vdc, I
C
= 3.5 Adc
Test 2
V
CE
= 70 Vdc, I
C
= 1.43 Adc
Test 3
V
CE
= 325 Vdc, I
C
= 55 mAdc
2N3902
V
CE
= 400 Vdc, I
C
= 35 mAdc
2N5157
Switching Tests
Load condition C (unclamped inductive load)
T
C
= 25
0
C; duty cycle
≤
10%; R
S
= 0.1
Ω
(See Figure 4 of MIL-PRF-19500/371)
Test 1
t
P
= approximately 3 ms (vary to obtain I
C)
; R
BB1
= 20
Ω;
V
BB
1
= 10 Vdc; R
BB2
= 3 kΩ;
V
BB2
= 1.5 Vdc; V
CC
= 50 Vdc; I
C
= 3.5 Adc; L = 60 mH; R = 3
Ω;
R
L
≤
14Ω.
Test 2
t
P
= approximately 3 ms (vary to obtain I
C)
; R
BB1
= 100
Ω;
V
BB1
= 10 Vdc; R
BB2
= 3 kΩ;
V
BB2
= 1.5 Vdc; I
C
= 0.6 Adc V
CC
= 50 Vdc; L = 200 mH; R = 8
Ω;
R
L
≤
83Ω.
Switching Tests
Load condition (clamped inductive load)
T
C
= +25
0
C; duty cycle
≤
10%. (See Figure 5 of MIL-PRF-19500/371)
Test 1
t
P
= approximately 30 ms (vary to obtain I
C)
; R
S
= 0.1
Ω;
R
BB1
= 20
Ω;
V
BB
1
= 10 Vdc; R
BB2
= 100
Ω;
V
BB2
= 1.5 Vdc; V
CC
= 50 Vdc; I
C
= 3.5 Adc; L = 60 mH; R = 3
Ω;
R
L
≥
0Ω.
(A suitable clamping circuit or diode can be used.)
Clamp Voltage = 400 +0, -5 Vdc
2N3902
Clamp Voltage = 500 +0, -5 Vdc
2N5157
(Clamped voltage must be reached)
3.) Pulse Test: Pulse Width = 300µs, Duty Cycle
≤
2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
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