SID15N10
Elektronische Bauelemente
15A, 100V, R
DS(ON)
110m
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SID15N10 provide the designer with the best
combination of fast switching. The TO-251 package is
universally preferred for all commercial-industrial
surface mount applications. The device is suited for
charger, industrial and consumer environment.
TO-251
FEATURES
R
DS(on)
≦
100m @ V
GS
= 10V
Super high density cell design for extremely low R
DS(on)
Exceptional on-resistance and maximum DC current
capability
A
B
C
D
GE
K
F
H
MARKING
M
J
P
15N10
Date Code
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
TO-251
MPQ
2.5K
Leader Size
13’ inch
Millimeter
Min.
Max.
6.40
6.80
5.20
5.50
2.20
2.40
0.45
0.55
6.80
7.20
7.20
7.80
REF.
G
H
J
K
M
P
Millimeter
Min.
Max.
5.40
5.80
0.90
1.50
2.30
0.60
0.90
0.50
0.70
0.45
0.60
2
Drain
1
Gate
3
Source
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
1
Symbol
V
DS
V
GS
T
C
=25°
C
T
C
=70°
C
I
DM
T
C
=25°
C
T
A
=25°
C
P
D
T
J
, T
STG
I
D
Ratings
100
±20
15
13.8
24
34.7
2
-55 ~ 150
Unit
V
V
A
A
A
W
W
°
C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Thermal Resistance Junction-Ambient (PCB
3
mount)
Maximum Thermal Resistance Junction-Case
3
R
θJA
R
θJC
62.5
3.6
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Apr-2013 Rev. A
Page 1 of 4
SID15N10
Elektronische Bauelemente
15A, 100V, R
DS(ON)
110m
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current
Static Drain-Source On-Resistance
Total Gate Charge
2
2
Symbol
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
C
iss
C
oss
C
rss
R
g
Min.
100
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
100
26.2
4.6
5.1
4.2
8.2
35.6
9.6
1535
60
37
2
Max.
-
2.5
±100
1
110
-
-
-
-
-
Unit
V
V
nA
µA
m
Test conditions
V
GS
=0, I
D
=250µA
V
DS
=V
GS
, I
D
=250µA
V
GS
= ±20V
V
DS
=80V, V
GS
=0
V
GS
=10V, I
D
=8A
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
2
nC
I
D
=10A
V
DS
=80V
V
GS
=10V
nS
-
-
-
-
-
-
pF
V
DS
=50V
I
D
= 10A
V
GS
=10V
R
L
=5
R
G
=3.3
V
GS
=0
V
DS
=15V
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Forward On Voltage
2
V
SD
-
-
1.2
V
I
S
=8.0A, V
GS
=0V
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test.
3. Surface Mounted on 1 in
2
copper pad of FR4 Board.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Apr-2013 Rev. A
Page 2 of 4
SID15N10
Elektronische Bauelemente
15A, 100V, R
DS(ON)
110m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Apr-2013 Rev. A
Page 3 of 4
SID15N10
Elektronische Bauelemente
15A, 100V, R
DS(ON)
110m
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
22-Apr-2013 Rev. A
Page 4 of 4
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