Si4842BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel
MOSFET
8
7
6
5
D
D
D
D
G
ABSOLUTE MAXIMUM RATINGS
T
A
= 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
A
= 25 °C
L = 0.1 mH
T
C
= 25 °C
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
30
± 20
28
23
20
b, c
16
b, c
60
5.6
2.7
b, c
35
61
6.25
4.0
3.0
b, c
1.9
b, c
- 55 to 150
Unit
V
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
A
mJ
Maximum Power Dissipation
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
b, d
t
≤
10 s
Steady State
Symbol
R
thJA
R
thJF
Typical
32
15
Maximum
42
20
Unit
°C/W
Notes:
a. Based on T
C
= 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
www.vishay.com
1
Si4842BDY
Vishay Siliconix
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
I
F
= 10 A, dI/dt = 100 A/µs, T
J
= 25 °C
I
S
= 2.7 A
0.74
34
31
18
16
T
C
= 25 °C
5.6
60
1.1
55
50
A
V
ns
nC
ns
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
V
DS
= 15 V, V
GS
= 10 V, I
D
= 25 A
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
3650
635
300
68
29
12.6
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 25 A
f = 1 MHz
9.4
1.25
125
190
38
13
15
15
42
8
2
190
280
60
20
25
25
65
15
ns
Ω
100
43
nC
pF
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 1 mA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 30 V, V
GS
= 0 V
V
DS
= 30 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
≥
5 V, V
GS
= 10 V
V
GS
=
10 V, I
D
= 20 A
V
GS
=
4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
30
0.0034
0.0047
90
0.0042
0.0057
1.4
30
30
- 6.4
3
± 100
1
10
V
mV/°C
V
nA
µA
Α
Ω
S
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
60
V
GS
= 10
V
thru 4
V
50
I
D
- Drain C
u
rrent (A)
I
D
- Drain C
u
rrent (A)
1.0
1.2
40
0.8
30
0.6
20
0.4
25 °C
T
C
= 125 °C
- 55 °C
10
3
V
0
0.0
0.2
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.006
4500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (mΩ)
3600
0.005
V
GS
= 4.5
V
C - Capacitance (pF)
2700
1800
C
oss
900
C
rss
0
6
12
18
24
30
0.004
V
GS
= 10
V
0.003
0
10
20
30
40
50
60
0
I
D
- Drain Current (A)
V
DS
- Drain-to-Source
Voltage
(V)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 25 A
8
V
DS
= 10
V
6
V
DS
= 15
V
R
DS(on)
- On-Resistance
(
N
ormalized)
1.4
1.6
I
D
= 20 A
Capacitance
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
V
GS
= 4.5
V
1.2
V
GS
= 10
V
1.0
4
V
DS
= 20
V
2
0.8
0
0
14
28
42
56
70
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
www.vishay.com
3
Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
100.000
T
J
= 150 °C
R
DS(on)
- Drain-to-So
u
rce On-Resistance (Ω)
0.030
10.000
I
S
- So
u
rce C
u
rrent (A)
0.024
1.000
0.018
0.100
T
J
= 25 °C
0.010
0.012
T
J
= 125 °C
0.006
T
J
= 25 °C
0.000
0
1
2
3
4
5
6
7
8
9
10
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
160
V
GS(th)
(
V
)
- 0.1
I
D
= 5 mA
- 0.4
I
D
= 250
µA
Po
w
er (
W
)
120
80
- 0.7
40
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
10 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73532
S09-0228-Rev. C, 09-Feb-09
Si4842BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
35
28
I
D
- Drain C
u
rrent (A)
21
14
7
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
8.0
2.0
6.4
1.6
Po
w
er (W)
3.2
Po
w
er (W)
0
25
50
75
100
125
150
4.8
1.2
0.8
1.6
0.4
0.0
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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