1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
Qualified Levels:
JAN, JANTX, and
JANTXV
Available on
commercial
versions
High Reliability Silicon Power Rectifier
Qualified per MIL-PRF-19500/297
DESCRIPTION
This series of silicon power rectifier part numbers are qualified up to the JANTXV level for high
reliability applications. They are constructed with glass passivated die and feature glass to
metal seal construction. They have a 500 amp surge rating and provide a V
RWM
up to 1000
volts.
Important:
For the latest information, visit our website
http://www.microsemi.com.
FEATURES
•
•
•
•
•
High continuous current rating.
Very low forward voltage.
Low thermal resistance.
JAN, JANTX and JANTXV qualifications are available per MIL-PRF-19500/297.
RoHS compliant devices available (commercial grade only).
DO-5
(DO-203AB)
Package
APPLICATIONS / BENEFITS
•
•
High frequency switching circuits.
Mechanically rugged DO-5 package.
MAXIMUM RATINGS
@ T
A
= +25
ºC
unless otherwise stated
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance Junction-to-Case
Working Peak Reverse Voltage
Symbol
T
J
and T
STG
R
ӨJC
V
RWM
Value
-65 to +175
0.8
100
200
400
600
800
1000
35
500
Unit
o
C
o
C/W
V
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
1-800-446-1158
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
o
(1)
Maximum Average DC Output Current @ T
C
= 150 C
Non-Repetitive Sinusoidal Surge Current @ 1/120 s,
T
C
= 150 ºC
I
O
I
FSM
A
A
NOTE:
1. Derate linearly 1.4 A ºC between T
C
= 150 ºC to T
C
= 175 ºC.
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 1 of 6
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
MECHANICAL and PACKAGING
•
•
•
•
•
•
CASE: Hermetically sealed metal and glass case body.
TERMINALS: Hot solder dip (Sn63/Pb37) on standard commercial, JAN, JANTX, and JANTXV levels. RoHS compliant matte-tin
on nickel is available on commercial grade only.
MARKING: Polarity symbol and part number.
POLARITY: Standard polarity devices are cathode to stud. Reverse polarity devices are anode to stud.
WEIGHT: Approximately 14 grams.
See
Package Dimensions
on last page.
PART NOMENCLATURE
JAN
Reliability Level
JAN = JAN level
JANTX = JANTX level
JANTXV = JANTXV level
Blank = Commercial
JEDEC type number
(see
Electrical
Characteristics
table)
1N1184
R
e3
RoHS Compliance
e3 = RoHS compliant (available
on commercial grade only)
Blank = non-RoHS compliant
Polarity
R = Anode to Stud
Blank = Cathode to Stud
Symbol
I
F
I
FSM
I
O
I
R
V
F
V
RWM
SYMBOLS & DEFINITIONS
Definition
Forward Current: The forward current dc value, no alternating component.
Maximum Forward Surge Current: The forward current, surge peak or rated forward surge current.
Average Rectified Output Current: The output current averaged over a full cycle with a 50 Hz or 60 Hz sine-wave input
and a 180 degree conduction angle.
Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature.
Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature range
excluding all transient voltages (ref JESD282-B). Also sometimes known as PIV.
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 2 of 6
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
ELECTRICAL CHARACTERISTICS
Parameters / Test Conditions
Forward Voltage
(1)
I
F
= 110 A, T
C
= 25 °C
Forward Voltage
(2)
I
F
= 500 A, T
C
= 150 °C
Reverse Current
V
RWM
= 100 V, T
J
= 25 °C
V
RWM
= 200 V, T
J
= 25 °C
V
RWM
= 400 V, T
J
= 25 °C
V
RWM
= 600 V, T
J
= 25 °C
V
RWM
= 800 V, T
J
= 25 °C
V
RWM
= 1000 V, T
J
= 25 °C
Reverse Current
V
RWM
= 100 V, T
J
= 150 °C
V
RWM
= 200 V, T
J
= 150 °C
V
RWM
= 400 V, T
J
= 150 °C
V
RWM
= 600 V, T
J
= 150 °C
V
RWM
= 800 V, T
Jj
= 150 °C
V
RWM
= 1000 V, T
J
= 150 °C
Symbol
V
F
V
F
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
1N1184(R)
1N1186(R)
1N1188(R)
1N1190(R)
1N3766(R)
1N3768(R)
Min.
Max.
1.4
2.3
Unit
V
V
I
R
10
µA
I
R
1
mA
NOTES:
1. tp < 8.3 ms, duty cycle ≤ 2 percent pulse.
2. VF1 shall be performed with either tp = 800 μs or tp = 8.3 ms.
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 3 of 6
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
GRAPHS
Instantaneous Forward Current - Amperes
Instantaneous Forward Voltage - Volts
FIGURE 1
Typical Forward Characteristics
Typical Reverse Current - mA
Reverse Voltage - Volts
FIGURE 2
Typical Reverse Characteristics
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 4 of 6
1N1184, 1N1186, 1N1188, 1N1190,
1N3766 and 1N3768 (R)
GRAPHS
(continued)
Maximum Allowable Case Temperature -°C
Average Forward Current – Amperes
FIGURE 3
Forward Current Derating
Junction to Case
Thernal Impedance - °C/Watts
Time in Seconds
FIGURE 4
Transient Thermal Impedance
T4-LDS-0138, Rev. 2 (121993)
©2013 Microsemi Corporation
Page 5 of 6
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