Freescale Semiconductor
Technical Data
Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this
part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF9060M
Rev. 9, 5/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applications
in 26 volt base station equipment.
•
Typical Performance at 945 MHz, 26 Volts
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — - 31.5 dBc
•
Integrated ESD Protection
•
Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
•
Excellent Thermal Stability
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
200_C Capable Plastic Package
•
TO - 270 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
•
TO - 272 - 2 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF9060MR1
MRF9060MBR1
ARCHIVE INFORMATION
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF9060MR1
CASE 1337 - 03, STYLE 1
TO - 272- 2
PLASTIC
MRF9060MBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +65
- 0.5, + 15
223
1.79
- 65 to +150
200
Unit
Vdc
Vdc
W
W/°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
θJC
Value
0.56
Unit
°C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF9060MR1 MRF9060MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
945 MHz, 60 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
Table 3. ESD Protection Characteristics
Test Conditions
Human Body Model
Machine Model
Charge Device Model
MRF9060MR1
MRF9060MBR1
Class
1 (Minimum)
M2 (Minimum)
C6 (Minimum)
C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
MRF9060MR1
MRF9060MBR1
1
3
260
260
Rating
Package Peak Temperature
Unit
°C
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
I
DSS
I
DSS
I
GSS
Min
—
—
—
Typ
—
—
—
Max
10
1
1
Unit
μAdc
μAdc
μAdc
ARCHIVE INFORMATION
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 65 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 26 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 200
μAdc)
Gate Quiescent Voltage
(V
DS
= 26 Vdc, I
D
= 450 mAdc)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 1.3 Adc)
Forward Transconductance
(V
DS
= 10 Vdc, I
D
= 4 Adc)
Dynamic Characteristics
Input Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Output Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
Reverse Transfer Capacitance
(V
DS
= 26 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
iss
C
oss
C
rss
—
—
—
101
53
2.5
—
—
—
pF
pF
pF
V
GS(th)
V
GS(Q)
V
DS(on)
g
fs
2
3
—
—
2.8
3.7
0.21
5.3
4
5
0.4
—
Vdc
Vdc
Vdc
S
(continued)
MRF9060MR1 MRF9060MBR1
2
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Table 5. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
(continued)
Characteristic
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
G
ps
17
18
—
dB
Symbol
Min
Typ
Max
Unit
η
37
40
—
%
IMD
—
- 31.5
- 28
dBc
IRL
—
- 14.5
-9
dB
ARCHIVE INFORMATION
Two - Tone Common - Source Amplifier Power Gain
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Two - Tone Drain Efficiency
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
3rd Order Intermodulation Distortion
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
Input Return Loss
(V
DD
= 26 Vdc, P
out
= 60 W PEP, I
DQ
= 450 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHZ)
G
ps
—
18
—
dB
η
—
40
—
%
IMD
—
- 31
—
dBc
IRL
—
- 12.5
—
dB
MRF9060MR1 MRF9060MBR1
RF Device Data
Freescale Semiconductor
3
ARCHIVE INFORMATION
V
GG
C6
RF
INPUT
B1
+
C7
L1
C4
DUT Z11
Z1
C1
Z2
Z3
Z4
Z5
C2
Z6
Z7
Z8
C3
Z9
C5
Z10
C9
Z12
Z13
Z14
L2
B2
+
C14
C15
+
C16
+
C17
RF
OUTPUT
Z15
Z16
Z17
Z18
C13
C8
C10
C11
C12
V
DD
ARCHIVE INFORMATION
Figure 1. 930 - 960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
B1
B2
C1, C7, C13, C14
C2, C3, C11
C4, C5
C6, C15, C16
C8, C9
C10
C12
C17
L1, L2
N1, N2
WB1, WB2
Board Material
PCB
Short Ferrite Bead
Long Ferrite Bead
47 pF Chip Capacitors
0.8- 8.0 Gigatrim Variable Capacitors
11 pF Chip Capacitors (MRF9060MR1)
10 pF Chip Capacitors (MRF9060MBR1)
10
mF,
35 V Tantalum Chip Capacitors
10 pF Chip Capacitors
3.9 pF Chip Capacitor
1.7 pF Chip Capacitor
220
mF
Electrolytic Chip Capacitor
12.5 nH Inductors
N - Type Panel Mount, Stripline
15 mil Brass Wear Blocks
30 mil Glass Teflon
®
,
ε
r
= 2.55 Copper Clad, 2 oz Cu
Etched Circuit Board
RF - 35- 0300
TO - 270/TO - 272 Surface/Bolt
Taconic
DSelectronics
Description
95F786
95F787
100B470JP 500X
44F3360
100B110JP 500X
100B100JP 500X
93F2975
100B100JP 500X
100B3R9CP 500X
100B1R7BP 500X
14F185
A04T- 5
3052- 1648- 10
Part Number
Manufacturer
Newark
Newark
ATC
Newark
ATC
Newark
Newark
ATC
ATC
Newark
Coilcraft
Avnet
MRF9060MR1 MRF9060MBR1
4
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.240″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.500″ x 0.100″ Microstrip
0.100″ x 0.270″ x 0.080″, Taper
0.330″ x 0.270″ Microstrip
0.120″ x 0.270″ Microstrip
0.270″ x 0.520″ x 0.140″, Taper
0.240″ x 0.520″ Microstrip
0.340″ x 0.520″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
0.060″ x 0.520″ Microstrip
0.360″ x 0.270″ Microstrip
0.060″ x 0.270″ Microstrip
0.130″ x 0.060″ Microstrip
0.300″ x 0.060″ Microstrip
0.210″ x 0.060″ Microstrip
0.600″ x 0.060″ Microstrip
0.290″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
C6
C17
V
GG
B1
B2
C7
C14
L1
C4
WB1
CUT OUT AREA
C3
C5
C8
WB2
C9
C10
L2
V
DD
C15 C16
OUTPUT
C11
C12
C13
INPUT
C1
C2
ARCHIVE INFORMATION
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. 930 - 960 MHz Broadband Test Circuit Component Layout
MRF9060MR1 MRF9060MBR1
RF Device Data
Freescale Semiconductor
5
ARCHIVE INFORMATION
MRF9060M
MRF9060MB
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