15TQ045
PHOTOVOLTAIC SOLAR CELL
PROTECTION SCHOTTKY RECTIFIER
FEATURES
●Trench
MOS Schottky technology
●
Low forward voltage drop,low power losses
●
High efficiency operation
●
High forward surge capability
●
Solder dip 275℃ max. 10s,per JESD 22-B106
●Compliant
to RoHS Directive 2002/95/ec and in
accordance to WEEE 2002/96/EC
REVERSE VOLTAGE - 45Volts
FORWARD CURRENT - 15.0 Amperes
R-6
1.0(25.4)
MI
.052(1.3)
DI
.048(1.2)
.360(9.1)
.340(8.6)
210
.360(9.1)
DI
.340(8.6)
MECHANICAL DATA
●
Case: JEDEC R-6 molded plastic
●
Polarity: Color band denotes cathode
●
Weight: 0.07 ounces , 2.1 grams
●
Mounting position: Any
T
C
measurement point
1.0(25.4)
MI
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
(with heatsink)
(without heatsink, free air)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
F(AV)
I
FSM
15TQ045
45
31.5
45
15
6
200
0.44 (TYP.)
UNIT
V
V
V
A
A
Peak Forward Surge Current 8.3ms single half sine-wave super imposed
on rated load(JEDEC Method)
I
F
=5.0A
I
F
=7.5A
Instantaneous Forward voltage (NOTE 1)
I
F
=15A
I
F
=5.0A
I
F
=7.5A T
A
=125℃
I
F
=15A
Reverse Current (NOTE 2)
Typical Junction Capacitance
Thermal Resistance
Typical Thermal Resistance
Operating Junction Temperature Range
Junction Temperature in DC Forward Current Without reverse bias,
t≤1h (fig. 2) (Note 5)
Storage Temperature Range
Notes:(1) Pulse test:300
μs
pulse width ,1% duty cycle
(2) Pulse test:40ms pulse width
V
R
=45V
T
A
=25℃
T
A
=125℃
4.0 V, 1 MHz
T
A
=25℃
0.46 (TYP.)
V
F
0.51 (TYP.)
0.33 (TYP.)
0.36 (TYP.)
0.44 (TYP.)
I
R
C
J
R
θJA
(3)
0.59 (MAX.)
V
0.54 (MAX.)
800 (MAX.)
25 (MAX.)
1290 (TYP.)
55
3.5
2.5
-40 to +150
≤200
-40 to +175
μA
mA
pF
℃/W
℃/W
℃
℃
℃
11.6 (TYP.)
7.5 (TYP.)
R
θJL
(3)
R
θJL
(4)
Top
TJ
TSTG
(3) Without heatsink,free air,units mounted on PCB with 2 mm
Χ
2 mm copper pad areas at 9.5 mm lead length
(4) Leads clipped at 3 mm lead length from plastic body on 7.0 cm
Χ
2.2 cm
Χ
1.9 cm
Χ
2 heatsink
(5) Meets the requirements of IEC 61215 ed. 2 bypass diode thermal test
REV. 1, 30-Dec-2011
~ 308 ~
RATING AND CHARACTERTIC CURVES
15TQ045
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT AMPERES
6.0
5.0
4.0
3.0
2.0
1.0
0
0
25
50
75
100
125
150
175
AMBIENT TEMPERATURE (℃)
Free Air ,without Heatsink
PERCENTAGE OF RATED CURRENT(%)
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
AMBIENT TEMPERATURE (℃)
FIG.3-FORWARD POWER LOSS
CHARACTERISTICS
D=0.5
8
D=0.3
D=0.2
6
D=0.1
INSTANTANEOUS REVERSE CURRENT (μA)
D=0.8
AVERAGE POWER LOSS
（
W
）
100000
T
A
=150℃
10000
T
A
=125℃
T
A
=100℃
1000
FIG.4-TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
DC Current with heatsink
FIG.2-RATED FORWARD CURRENT vs.
AMBIENT TEMPERATURE
10
4
D=1.0
100
2
10
T
A
=25℃
0
0
2
4
6
8
10
12
14
16
18
AVERAGE FORWARD CURRENT(A)
1
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE
FIG.5-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT (A)
10000
FIG.6-TYPICAL JUNCTION CAPACITANCE
10
T
A
=125℃
T
A
=100℃
JUNCTION CAPACITANCE (pF)
T
A
=150℃
1000
1
T
A
=25℃
T
J
=25℃
，f=1MHZ
Vsig=50maV p-p
100
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.1
1
4
10
100
REVERSE VOLTAGE (V)
INSTANTANEOUS FORWARD VOLTAGE(V)
REV. 1, 30-Dec-2011
~ 309 ~
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