EXTENDED TEMPERATURE
BOOT BLOCK FLASH MEMORY
FLASH MEMORY
FEATURES
• Extended temperature range operation:
-40°C to +85°C
• Boot block architecture:
16KB/4K-word boot block (protected)
Two 8KB/4K-word parameter blocks
Multiple 128KB/64K-word main blocks
• Low-voltage operation:
3.0V to 3.6V V
CC
5V
±10%
or 12V
±5%
V
PP
• Address access time:
100ns at 3.3V
±0.3V
• Available densities:
4Mb, 8Mb
• Industry-standard pinouts
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
• TSOP and FBGA* packaging options
MT28F400B1 VET, MT28F800B1 VET,
MT28F004B1 VET, MT28F008B1 VET
Low Voltage, Extended Temperature
PIN ASSIGNMENT (Top View)
40-Pin TSOP Type I
(C-2)
8Mb
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
4Mb
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
V
PP
WP#
A18
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
4Mb
A17
V
SS
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
8Mb
A17
V
SS
NC
A19
A10
DQ7
DQ6
DQ5
DQ4
V
CC
V
CC
NC
DQ3
DQ2
DQ1
DQ0
OE#
V
SS
CE#
A0
OPTIONS
• Timing
100ns access
• Boot Block Starting Address
Top
Bottom
• Voltage
3.0V to 3.6 V
CC
• Operating Temperature Range
Extended (-40°C to +85°C)
MARKING
-10
T
B
V
ET
8Mb
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
4Mb
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE#
RP#
V
PP
WP#
NC
NC
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
48-Pin TSOP Type I
(C-3)
4Mb
8Mb
A16
A16
BYTE# BYTE#
V
SS
V
SS
DQ15/A-1 DQ15/A-1
DQ7
DQ7
DQ14
DQ14
DQ6
DQ6
DQ13
DQ13
DQ5
DQ5
DQ12
DQ12
DQ4
DQ4
V
CC
V
CC
DQ11
DQ11
DQ3
DQ3
DQ10
DQ10
DQ2
DQ2
DQ9
DQ9
DQ1
DQ1
DQ8
DQ8
DQ0
DQ0
OE#
OE#
V
SS
V
SS
CE#
CE#
A0
A0
• Packages
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG
Plastic 48-pin TSOP Type 1 (12mm x 20mm) WG
48-bump FBGA (8 x 6 ball grid)
FB*
• Part Number Example: MT28F400B1WG-10 TVET
* MT28F800B1 VET only. Contact factory for availability.
GENERAL DESCRIPTION
The Micron
®
low voltage, extended temperature flash
memory family consists of 4Mb and 8Mb boot block flash
memories. They are fabricated with Micron’s advanced
CMOS floating-gate process. Device operation and features
are identical to the commercial temperature equivalent
except that extended temperature range operation (-40°C to
Extended Temperature Boot Block Flash Memory
F32.p65 – Rev. 2/99
+85°C) is supported for all operations. For further informa-
tion on device operation or features, refer to the equivalent
commercial temperature device data sheets.
Please refer to Micron’s Web site (www.micron.com/
flash/htmls/datasheets.html)
for the latest full-length data
sheet.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
Micron is a registered trademark of Micron Technology, Inc.
EXTENDED TEMPERATURE
BOOT BLOCK FLASH MEMORY
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
CC
Supply Relative to V
SS
........ -0.5V to +6V**
Input Voltage Relative to V
SS
........................ -0.5V to +6V**
V
PP
Voltage Relative to V
SS
....................... -0.5V to +12.6V
†
RP# or A9 Pin Voltage Relative to V
SS
.... -0.5V to +12.6V
†
Temperature under Bias ............................... -40°C to +85°C
Storage Temperature (plastic) .................... -55°C to +125°C
Power Dissipation ............................................................. 1W
*Stresses greater than those listed under “Absolute Maxi-
mum Ratings” may cause permanent damage to the device.
This is a stress rating only, and functional operation of the
device at these or any other conditions above those indi-
cated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
**V
CC
, input and I/O pins may transition to -2V for <20ns
and V
CC
+ 2V for <20ns.
†
Voltage may pulse to -2V for <20ns and 14V for
<20ns.
ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC READ
OPERATING CONDITIONS
(-40°C
≤
T
A
≤
+85°C)
PARAMETER/CONDITION
Supply Voltage
Input High (Logic 1) Voltage, all inputs
Input Low (Logic 0) Voltage, all inputs
Device Identification Voltage, A9
V
PP
Supply Voltage
SYMBOL
V
CC
V
IH
V
IL
V
ID
V
PP
MIN
3
2
-0.5
11.4
-0.5
MAX
3.6
V
CC
+ 0.5
0.8
12.6
12.6
UNITS
V
V
V
V
V
NOTES
1
1
1
1
1
DC OPERATING CHARACTERISTICS
(-40°C
≤
T
A
≤
+85°C)
PARAMETER/CONDITION
OUTPUT VOLTAGE LEVELS (CMOS)
Output High Voltage (I
OH
= -100µA)
Output Low Voltage (I
OL
= 2mA)
INPUT LEAKAGE CURRENT
Any input (0V
≤
V
IN
≤
V
CC
);
All other pins not under test = 0V
INPUT LEAKAGE CURRENT: A9 INPUT
(11.4V
≤
A9
≤
12.6V = V
ID
)
INPUT LEAKAGE CURRENT: RP# INPUT
(11.4V
≤
RP#
≤
12.6V = V
HH
)
OUTPUT LEAKAGE CURRENT
(D
OUT
is disabled; 0V
≤
V
OUT
≤
V
CC
)
NOTE:
1. All voltages referenced to V
SS
.
SYMBOL
V
OH
V
OL
I
L
I
ID
I
HH
I
OZ
MIN
V
CC
- 0.4
–
-1
–
–
-10
MAX
–
0.45
1
500
500
10
UNITS
V
1
V
µA
µA
µA
µA
NOTES
Extended Temperature Boot Block Flash Memory
F32.p65 – Rev. 2/99
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
EXTENDED TEMPERATURE
BOOT BLOCK FLASH MEMORY
CAPACITANCE
(T
A
= 25°C; f = 1 MHz)
PARAMETER/CONDITION
Input Capacitance
Output Capacitance
SYMBOL
C
I
C
O
MAX
8
12
UNITS
pF
pF
NOTES
READ AND STANDBY CURRENT DRAIN
(-40°C
≤
T
A
≤
+85°C)
PARAMETER/CONDITION
READ CURRENT: WORD-WIDE, CMOS INPUT LEVELS
(CE#
≤
0.2V; OE#
≥
V
CC
- 0.2V; f = 10 MHz; Other inputs
≤
0.2V
or
≥
V
CC
- 0.2V; RP#
≥
V
CC
- 0.2V)
READ CURRENT: BYTE-WIDE, CMOS INPUT LEVELS
(CE#
≤
0.2V; OE#
≥
V
CC
- 0.2V; f = 10 MHz; Other inputs
≤
0.2V
or
≥
V
CC
- 0.2V; RP# = V
CC
- 0.2V)
STANDBY CURRENT: CMOS INPUT LEVELS
V
CC
power supply standby current
(CE# = RP# = V
CC
- 0.2V)
IDLE CURRENT
(CE#
≤
0.2V; f = 0Hz; Other inputs
≤
0.2V or
≥
V
CC
- 0.2V;
RP# = V
CC
- 0.2V; Array read mode)
DEEP POWER-DOWN CURRENT: V
CC
SUPPLY (RP# = V
SS
±0.2V)
STANDBY OR READ CURRENT: V
PP
SUPPLY (V
PP
> 5.5V)
STANDBY OR READ CURRENT: V
PP
SUPPLY (V
PP
≤
5.5V)
DEEP POWER-DOWN CURRENT: V
PP
SUPPLY (RP# = V
SS
±0.2V)
SYMBOL
I
CC
1
MAX
30
UNITS
mA
NOTES
1, 2
I
CC
2
30
mA
1, 2
I
CC
3
110
µA
I
CC
4
I
CC
5
I
PP
1
I
PP
2
I
PP
3
2
8
50
±15
10
mA
µA
µA
µA
µA
READ TIMING PARAMETERS
ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS
(-40°C
≤
T
A
≤
+85°C; V
CC
= +3.3V
±0.3V)
AC CHARACTERISTICS
PARAMETER
READ cycle time
Access time from CE#
Access time from OE#
Access time from address
RP# HIGH to output valid delay
OE# or CE# HIGH to output in High-Z
Output hold time from OE#, CE# or address change
RP# LOW pulse width
NOTE:
-10
SYMBOL
t
RC
t
ACE
t
AOE
t
AA
t
RWH
t
OD
t
OH
t
RP
MIN
100
MAX
100
50
100
800
45
0
150
UNITS NOTES
ns
ns
3
ns
3
ns
ns
ns
ns
ns
1. I
CC
is dependent on cycle rates.
2. I
CC
is dependent on output loading. Specified values are obtained with the outputs open.
3. OE# may be delayed by
t
ACE minus
t
AOE after CE# falls before
t
ACE is affected.
Extended Temperature Boot Block Flash Memory
F32.p65 – Rev. 2/99
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
EXTENDED TEMPERATURE
BOOT BLOCK FLASH MEMORY
AC TEST CONDITION
Input pulse levels ........................................................ 0V to 3V
Input rise and fall times .................................................. <10ns
Input timing reference level .............................................. 1.5V
Output timing reference level ........................................... 1.5V
Output load ..................................... 1 TTL gate and C
L
= 50pF
ADDRESSES
CE#
,,
,
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
t RWH
V
IH
V
IL
WORD-WIDE READ CYCLE
1, 2
VALID ADDRESS
t RC
t AA
,,
,,
,,
,,
,
t OD
t OH
t ACE
OE#
WE#
t AOE
DQ0-DQ15
VALID DATA
RP#
DON’T CARE
UNDEFINED
READ TIMING PARAMETERS
-10
SYMBOL
t
RC
t
ACE
t
AOE
t
AA
MIN
100
MAX
100
50
100
UNITS
ns
ns
ns
ns
SYMBOL
t
RWH
t
OD
t
OH
-10
MIN
MAX
800
45
UNITS
ns
ns
ns
0
NOTE:
1. BYTE# = HIGH.
2. Applies to MT28Fx00B1 VET only.
Extended Temperature Boot Block Flash Memory
F32.p65 – Rev. 2/99
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
ADDRESSES
,,
,
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
V
IH
V
IL
2
EXTENDED TEMPERATURE
BOOT BLOCK FLASH MEMORY
BYTE-WIDE READ CYCLE
1
VALID ADDRESS
t RC
t AA
CE#
t ACE
,,
,,
,
,
t OD
t OH
OE#
WE#
t AOE
DQ0-DQ7
VALID DATA
V
IH
V
IL
HIGH-Z
t RWH
V
IH
DQ8-DQ14
RP#
V
IL
,
,
,
-10
MAX
100
50
100
UNITS
ns
ns
ns
ns
SYMBOL
t
RWH
t
OD
t
OH
MIN
0
DON’T CARE
UNDEFINED
READ TIMING PARAMETERS
-10
SYMBOL
t
RC
t
ACE
t
AOE
t
AA
MIN
100
MAX
800
45
UNITS
ns
ns
ns
NOTE:
1. BYTE# = LOW (MT28Fx00B1 VET).
2. Does not apply to MT28F00xB1 VET.
Extended Temperature Boot Block Flash Memory
F32.p65 – Rev. 2/99
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999,
Micron Technology, Inc.
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