Datasheet> 器件分类 > 存储> 存储> MT48LC32M16A2P-75AIT:C

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MT48LC32M16A2P-75AIT:C: 产品描述Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54; 产品类别存储存储; 文件大小4MB，共77页; 制造商Micron Technology; 官网地址http://www.mdtic.com.tw/; 标准

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MT48LC32M16A2P-75AIT:C概述

Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54

MT48LC32M16A2P-75AIT:C规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	Micron Technology
包装说明	TSOP2,
Reach Compliance Code	compliant
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	5.4 ns
其他特性	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G54
JESD-609代码	e3
长度	22.22 mm
内存密度	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM
内存宽度	16
功能数量	1
端口数量	1
端子数量	54
字数	33554432 words
字数代码	32000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	32MX16
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
峰值回流温度（摄氏度）	260
座面最大高度	1.2 mm
自我刷新	YES
最大供电电压 (Vsup)	3.6 V
最小供电电压 (Vsup)	3 V
标称供电电压 (Vsup)	3.3 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子面层	Matte Tin (Sn)
端子形式	GULL WING
端子节距	0.8 mm
端子位置	DUAL
处于峰值回流温度下的最长时间	30
宽度	10.16 mm

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512Mb: x4, x8, x16 SDRAM

Features

SDR SDRAM

MT48LC128M4A2 – 32 Meg x 4 x 4 banks

MT48LC64M8A2 – 16 Meg x 8 x 4 banks

MT48LC32M16A2 – 8 Meg x 16 x 4 banks

Features

• PC100- and PC133-compliant

• Fully synchronous; all signals registered on positive

edge of system clock

• Internal, pipelined operation; column address can

be changed every clock cycle

• Internal banks for hiding row access/precharge

• Programmable burst lengths: 1, 2, 4, 8, or full page

• Auto precharge, includes concurrent auto precharge

and auto refresh modes

• Self refresh mode

• Auto refresh

– 64ms, 8192-cycle refresh (commercial and

industrial)

• LVTTL-compatible inputs and outputs

• Single 3.3V ±0.3V power supply

Options

• Configurations

– 128 Meg x 4 (32 Meg x 4 x 4 banks)

– 64 Meg x 8 (16 Meg x 8 x 4 banks)

– 32 Meg x 16 (8 Meg x 16 x 4 banks)

• Write recovery (

WR)

–

WR = 2 CLK

• Plastic package – OCPL

– 54-pin TSOP II (400 mil) (standard)

– 54-pin TSOP II (400 mil) Pb-free

• Timing – cycle time

– 7.5ns @ CL = 3 (PC133)

– 7.5ns @ CL = 2 (PC133)

• Self refresh

– Standard

– Low power

• Operating temperature range

– Commercial (0˚C to +70˚C)

– Industrial (–40˚C to +85˚C)

• Revision

Notes:

1. See technical note TN-48-05 on

Micron's Web site.

2. Off-center parting line.

3. Available on x4 and x8 only.

4. Contact Micron for availability.

Marking

128M4

64M8

32M16

-75

-7E

None

Table 1: Key Timing Parameters

CL = CAS (READ) latency

Speed Grade

-7E

-75

-7E

-75

Clock

Frequency

143 MHz

133 MHz

100 MHz

Access Time

CL = 2

–

5.4ns

6ns

CL = 3

5.4ns

–

Setup Time

1.5ns

Hold Time

0.8ns

PDF: 09005aef809bf8f3

512Mb_sdr.pdf - Rev. Q 12/12 EN

Products and specifications discussed herein are subject to change by Micron without notice.

Micron Technology, Inc. reserves the right to change products or specifications without notice.

512Mb: x4, x8, x16 SDRAM

Features

Contents

General Description ......................................................................................................................................... 6

Functional Block Diagrams ............................................................................................................................... 7

Pin and Ball Assignments and Descriptions ..................................................................................................... 10

Package Dimensions ....................................................................................................................................... 12

Temperature and Thermal Impedance ............................................................................................................ 13

Electrical Specifications .................................................................................................................................. 15

Electrical Specifications – I

Parameters ........................................................................................................ 17

Electrical Specifications – AC Operating Conditions ......................................................................................... 18

Functional Description ................................................................................................................................... 21

Commands .................................................................................................................................................... 22

COMMAND INHIBIT .................................................................................................................................. 22

NO OPERATION (NOP) ............................................................................................................................... 23

LOAD MODE REGISTER (LMR) ................................................................................................................... 23

ACTIVE ...................................................................................................................................................... 23

READ ......................................................................................................................................................... 24

WRITE ....................................................................................................................................................... 25

PRECHARGE .............................................................................................................................................. 26

BURST TERMINATE ................................................................................................................................... 26

REFRESH ................................................................................................................................................... 27

AUTO REFRESH ..................................................................................................................................... 27

SELF REFRESH ....................................................................................................................................... 27

Truth Tables ................................................................................................................................................... 28

Initialization .................................................................................................................................................. 33

Mode Register ................................................................................................................................................ 35

Burst Length .............................................................................................................................................. 37

Burst Type .................................................................................................................................................. 37

CAS Latency ............................................................................................................................................... 39

Operating Mode ......................................................................................................................................... 39

Write Burst Mode ....................................................................................................................................... 39

Bank/Row Activation ...................................................................................................................................... 40

READ Operation ............................................................................................................................................. 41

WRITE Operation ........................................................................................................................................... 50

Burst Read/Single Write .............................................................................................................................. 57

PRECHARGE Operation .................................................................................................................................. 58

Auto Precharge ........................................................................................................................................... 58

AUTO REFRESH Operation ............................................................................................................................. 70

SELF REFRESH Operation ............................................................................................................................... 72

Power-Down .................................................................................................................................................. 74

Clock Suspend ............................................................................................................................................... 75

PDF: 09005aef809bf8f3

512Mb_sdr.pdf - Rev. Q 12/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

512Mb: x4, x8, x16 SDRAM

Features

List of Figures

Figure 1: 128 Meg x 4 Functional Block Diagram ............................................................................................... 7

Figure 2: 64 Meg x 8 Functional Block Diagram ................................................................................................. 8

Figure 3: 32 Meg x 16 Functional Block Diagram ............................................................................................... 9

Figure 4: 54-Pin TSOP (Top View) .................................................................................................................. 10

Figure 5: 54-Pin Plastic TSOP (400 mil) – Package Codes TG/P ......................................................................... 12

Figure 6: Example: Temperature Test Point Location, 54-Pin TSOP (Top View) ................................................. 14

Figure 7: ACTIVE Command .......................................................................................................................... 23

Figure 8: READ Command ............................................................................................................................. 24

Figure 9: WRITE Command ........................................................................................................................... 25

Figure 10: PRECHARGE Command ................................................................................................................ 26

Figure 11: Initialize and Load Mode Register .................................................................................................. 34

Figure 12: Mode Register Definition ............................................................................................................... 36

Figure 13: CAS Latency .................................................................................................................................. 39

Figure 14: Example: Meeting

RCD (MIN) When 2 <

RCD (MIN)/

CK < 3 .......................................................... 40

Figure 15: Consecutive READ Bursts .............................................................................................................. 42

Figure 16: Random READ Accesses ................................................................................................................ 43

Figure 17: READ-to-WRITE ............................................................................................................................ 44

Figure 18: READ-to-WRITE With Extra Clock Cycle ......................................................................................... 45

Figure 19: READ-to-PRECHARGE .................................................................................................................. 45

Figure 20: Terminating a READ Burst ............................................................................................................. 46

Figure 21: Alternating Bank Read Accesses ..................................................................................................... 47

Figure 22: READ Continuous Page Burst ......................................................................................................... 48

Figure 23: READ – DQM Operation ................................................................................................................ 49

Figure 24: WRITE Burst ................................................................................................................................. 50

Figure 25: WRITE-to-WRITE .......................................................................................................................... 51

Figure 26: Random WRITE Cycles .................................................................................................................. 52

Figure 27: WRITE-to-READ ............................................................................................................................ 52

Figure 28: WRITE-to-PRECHARGE ................................................................................................................. 53

Figure 29: Terminating a WRITE Burst ............................................................................................................ 54

Figure 30: Alternating Bank Write Accesses ..................................................................................................... 55

Figure 31: WRITE – Continuous Page Burst ..................................................................................................... 56

Figure 32: WRITE – DQM Operation ............................................................................................................... 57

Figure 33: READ With Auto Precharge Interrupted by a READ ......................................................................... 59

Figure 34: READ With Auto Precharge Interrupted by a WRITE ........................................................................ 60

Figure 35: READ With Auto Precharge ............................................................................................................ 61

Figure 36: READ Without Auto Precharge ....................................................................................................... 62

Figure 37: Single READ With Auto Precharge .................................................................................................. 63

Figure 38: Single READ Without Auto Precharge ............................................................................................. 64

Figure 39: WRITE With Auto Precharge Interrupted by a READ ........................................................................ 65

Figure 40: WRITE With Auto Precharge Interrupted by a WRITE ...................................................................... 65

Figure 41: WRITE With Auto Precharge ........................................................................................................... 66

Figure 42: WRITE Without Auto Precharge ..................................................................................................... 67

Figure 43: Single WRITE With Auto Precharge ................................................................................................. 68

Figure 44: Single WRITE Without Auto Precharge ............................................................................................ 69

Figure 45: Auto Refresh Mode ........................................................................................................................ 71

Figure 46: Self Refresh Mode .......................................................................................................................... 73

Figure 47: Power-Down Mode ........................................................................................................................ 74

Figure 48: Clock Suspend During WRITE Burst ............................................................................................... 75

Figure 49: Clock Suspend During READ Burst ................................................................................................. 76

Figure 50: Clock Suspend Mode ..................................................................................................................... 77

PDF: 09005aef809bf8f3

512Mb_sdr.pdf - Rev. Q 12/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

512Mb: x4, x8, x16 SDRAM

Features

List of Tables

Table 1: Key Timing Parameters ....................................................................................................................... 1

Table 2: Address Table ..................................................................................................................................... 2

Table 3: 512Mb SDR Part Numbering ............................................................................................................... 2

Table 4: Pin and Ball Descriptions .................................................................................................................. 11

Table 5: Temperature Limits .......................................................................................................................... 13

Table 6: Thermal Impedance Simulated Values ............................................................................................... 14

Table 7: Absolute Maximum Ratings .............................................................................................................. 15

Table 8: DC Electrical Characteristics and Operating Conditions ..................................................................... 15

Table 9: Capacitance ..................................................................................................................................... 16

Table 10: I

Specifications and Conditions (-7E, -75) ..................................................................................... 17

Table 11: Electrical Characteristics and Recommended AC Operating Conditions (-7E, -75) ............................. 18

Table 12: AC Functional Characteristics (-7E, -75) ........................................................................................... 19

Table 13: Truth Table – Commands and DQM Operation ................................................................................. 22

Table 14: Truth Table – Current State Bank

Command to Bank

.................................................................. 28

Table 15: Truth Table – Current State Bank n, Command to Bank

................................................................. 30

Table 16: Truth Table – CKE ........................................................................................................................... 32

Table 17: Burst Definition Table ..................................................................................................................... 38

PDF: 09005aef809bf8f3

512Mb_sdr.pdf - Rev. Q 12/12 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

MT48LC32M16A2P-75AIT:C相似产品对比

	MT48LC32M16A2P-75AIT:C	MT48LC64M8A2P-7EAAT:C	MT48LC64M8A2P-7EAIT:C	MT48LC32M16A2P-7E:C	MT48LC32M16A2P-75AAT:C	MT48LC32M16A2P-75AAT	MT48LC64M8A2P-75AAT:C	MT48LC64M8A2P-75AIT:C	MT48LC64M8A2TG-75AAT:C	MT48LC64M8A2TG-75AIT:C
描述	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	DRAM	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	32MX16 SYNCHRONOUS DRAM, 5.4ns, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 INCH, PLASTIC, TSOP2-54
包装说明	TSOP2,	TSOP2,	TSOP2,	,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,	TSOP2,
Reach Compliance Code	compliant	compliant	compliant	unknown	compliant	compliant	compliant	compliant	compliant	compliant
厂商名称	Micron Technology	-	-	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
ECCN代码	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	5.4 ns	5.4 ns	5.4 ns	-	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns	5.4 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
JESD-30 代码	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	-	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609代码	e3	e3	e3	-	e3	e3	e3	e3	e0	e0
长度	22.22 mm	22.22 mm	22.22 mm	-	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
内存密度	536870912 bit	536870912 bit	536870912 bit	-	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bit
内存集成电路类型	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
内存宽度	16	8	8	-	16	16	8	8	8	8
功能数量	1	1	1	-	1	1	1	1	1	1
端口数量	1	1	1	-	1	1	1	1	1	1
端子数量	54	54	54	-	54	54	54	54	54	54
字数	33554432 words	67108864 words	67108864 words	-	33554432 words	33554432 words	67108864 words	67108864 words	67108864 words	67108864 words
字数代码	32000000	64000000	64000000	-	32000000	32000000	64000000	64000000	64000000	64000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
组织	32MX16	64MX8	64MX8	-	32MX16	32MX16	64MX8	64MX8	64MX8	64MX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP2	TSOP2	-	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	-	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
座面最大高度	1.2 mm	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
自我刷新	YES	YES	YES	-	YES	YES	YES	YES	YES	YES
最大供电电压 (Vsup)	3.6 V	3.6 V	3.6 V	-	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
最小供电电压 (Vsup)	3 V	3 V	3 V	-	3 V	3 V	3 V	3 V	3 V	3 V
标称供电电压 (Vsup)	3.3 V	3.3 V	3.3 V	-	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
表面贴装	YES	YES	YES	-	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	-	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
端子面层	Matte Tin (Sn)	TIN	TIN	-	Matte Tin (Sn)	Matte Tin (Sn)	TIN	TIN	TIN LEAD	TIN LEAD
端子形式	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	0.8 mm	0.8 mm	0.8 mm	-	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	10.16 mm	10.16 mm	-	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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