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MT46V16M16TG-5BLAAT:M

产品描述DDR DRAM, 16MX16, CMOS, PDSO66, 400 MIL, PLASTIC, TSOP-66
产品类别存储    存储   
文件大小1MB,共90页
制造商Micron Technology
官网地址http://www.mdtic.com.tw/
下载文档 详细参数 全文预览

MT46V16M16TG-5BLAAT:M概述

DDR DRAM, 16MX16, CMOS, PDSO66, 400 MIL, PLASTIC, TSOP-66

MT46V16M16TG-5BLAAT:M规格参数

参数名称属性值
厂商名称Micron Technology
零件包装代码TSOP
包装说明TSSOP,
针数66
Reach Compliance Codeunknown
ECCN代码EAR99
访问模式FOUR BANK PAGE BURST
其他特性AUTO/SELF REFRESH
JESD-30 代码R-PDSO-G66
长度22.22 mm
内存密度268435456 bit
内存集成电路类型DDR DRAM
内存宽度16
功能数量1
端口数量1
端子数量66
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
最高工作温度105 °C
最低工作温度-40 °C
组织16MX16
封装主体材料PLASTIC/EPOXY
封装代码TSSOP
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
座面最大高度1.2 mm
自我刷新YES
最大供电电压 (Vsup)2.7 V
最小供电电压 (Vsup)2.5 V
标称供电电压 (Vsup)2.6 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子形式GULL WING
端子节距0.65 mm
端子位置DUAL
宽度10.16 mm

文档预览

下载PDF文档
256Mb: x8, x16 Automotive DDR SDRAM
Features
Automotive DDR SDRAM
MT46V32M8 – 8 Meg x 8 x 4 banks
MT46V16M16 – 4 Meg x 16 x 4 banks
Features
• V
DD
= 2.5V ±0.2V, V
DDQ
= 2.5V ±0.2V
V
DD
= 2.6V ±0.1V, V
DDQ
= 2.6V ±0.1V (DDR400)
1
• Bidirectional data strobe (DQS) transmitted/
received with data, that is, source-synchronous data
capture (x16 has two – one per byte)
• Internal, pipelined double-data-rate (DDR)
architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data
(x16 has two – one per byte)
• Programmable burst lengths (BL): 2, 4, or 8
• Auto refresh
64ms, 8192-cycle(AIT)
16ms, 8192-cycle (AAT)
• Self refresh (not available on AAT devices)
• Longer-lead TSOP for improved reliability (OCPL)
• 2.5V I/O (SSTL_2-compatible)
• Concurrent auto precharge option supported
t
RAS lockout supported (
t
RAP =
t
RCD)
• AEC-Q100
• PPAP submission
• 8D response time
Options
• Configuration
32 Meg x 8 (8 Meg x 8 x 4 banks)
16 Meg x 16 (4 Meg x 16 x 4 banks)
• Plastic package – OCPL
66-pin TSOP
66-pin TSOP (Pb-free)
• Plastic package
60-ball FBGA (8mm x 12.5mm)
60-ball FBGA (8mm x 12.5mm)
(Pb-free)
• Timing – cycle time
5ns @ CL = 3 (DDR400)
• Self refresh
Standard
Low-power self refresh
• Temperature rating
Industrial (–40qC to +85qC)
Automotive (–40qC to +105qC)
• Revision
x8, x16
Marking
32M8
16M16
TG
P
CV
CY
-5B
None
L
AIT
AAT
:M
Notes: 1. DDR400 devices operating at < DDR333 con-
ditions can use V
DD
/V
DDQ
= 2.5V +0.2V.
2. Not all options listed can be combined to
define an offered product. Use the Part Cata-
log Search on www.micron.com for product
offerings and availability.
PDF:09005aef848ea6ef/Source: 09005aef845d3b9c
256mb_x8x16_at_ddr_t66a_d1.fm - Rev. A; Core DDR Rev. B 11/11 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.

 
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