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UR4KB60-BC2

产品描述Bridge Rectifier Diode,
产品类别分立半导体    二极管   
文件大小280KB,共4页
制造商Taiwan Semiconductor
官网地址http://www.taiwansemi.com/
标准
下载文档 详细参数 选型对比 全文预览

UR4KB60-BC2概述

Bridge Rectifier Diode,

UR4KB60-BC2规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Taiwan Semiconductor
包装说明R-PSFM-T4
Reach Compliance Codecompliant
ECCN代码EAR99
最小击穿电压600 V
外壳连接ISOLATED
配置BRIDGE, 4 ELEMENTS
二极管元件材料SILICON
二极管类型BRIDGE RECTIFIER DIODE
JESD-30 代码R-PSFM-T4
JESD-609代码e3
最大非重复峰值正向电流135 A
元件数量4
相数1
端子数量4
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流2 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式FLANGE MOUNT
最大重复峰值反向电压600 V
表面贴装NO
端子面层Matte Tin (Sn)
端子形式THROUGH-HOLE
端子位置SINGLE

UR4KB60-BC2文档预览

UR4KB60-B - UR4KB100-B
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Ideal for printed circuit board
- High case dielectric strength
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Bridge Rectifiers
MECHANICAL DATA
Case:
D3K
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal:
Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 1A whisker test
Weight:
1.24 g (approximately)
Mounting Torque:
0.8 N.M max.
D3K
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward current Without heat sink T
C
=120℃
60Hz sine wave resistance load
With heat sink T
C
=138℃
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating of fusing ( t < 8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum DC reverse current at rated DC blocking voltage
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJC
R
θJL
R
θJA
T
J
T
STG
UR4KB
60-B
600
420
600
UR4KB
80-B
800
560
800
2
4
135
75
1.0
10
8.2
9.3
14
- 55 to +150
- 55 to +150
O
UR4KB
100-B
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
V
μA
C/W
O
O
C
C
Version: A1605
UR4KB60-B - UR4KB100-B
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
UR4KBx0-B
(Note )
PACKING CODE
PACKING CODE
SUFFIX
C2
G
D3K
1,500 / BOX
PACKAGE
PACKING
Note : "x" defines voltage from 600V (UR4KB60-B) to 1000V (UR4KB100-B)
EXAMPLE
EXAMPLE P/N
UR4KB60-B C2
UR4KB60-B C2G
PART NO.
UR4KB60-B
PACKING CODE
C2
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
5
4
With heat sink
3
2
1
0
0
25
50
75
100
125
150
Without heat sink
140
120
PEAK FORWARD SURGE
CURRENT (A)
100
80
60
40
20
0
1
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
(JEDEC Method)
Fig 1
AVERAGE FORWARD
A
CURRENT (A)
Fig.2
10
NUMBER OF CYCLES AT 60 Hz
100
CASE TEMPERATURE (
o
C)
FIG. 3 TYPICAL REVERSE CHARACTERISTICS
1000
100
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
Fig. 3.4
INSTANTANEOUS REVERSE
A
CURRENT (μA)
TJ=125℃
100
TJ=125℃
INSTANTANEOUS FORWARD
A
CURRENT (A)
10
10
TJ=25℃
1
1
TJ=25℃
Fig.5
0.1
0
50
100
0.1
0.4
0.6
0.8
1
1.2
1.4
FORWARD VOLTAGE (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Version: A1605
UR4KB60-B - UR4KB100-B
Taiwan Semiconductor
FIG. 5 FORWARD POWER DISSIPATION
7
6
POWER DISSIPATION(W)
5
4
3
2
1
0
0
0.5
1
1.5
2
2.5
3
FORWARD RECTIFIED CURRENT Io (A)
PACKAGE OUTLINE DIMENSIONS
D3K
Unit (mm)
Min
13.50
0.70
11.70
10.50
11.70
1.10
3.51
6.70
1.10
1.05
0.66
2.90
2.40
3.10
1.00
0.40
1.80
0.40
Max
14.10
1.40
12.30
11.10
12.30
1.40
4.11
7.30
1.50
1.25
0.86
3.30
2.80
3.40
1.40
0.80
2.40
0.60
Unit (inch)
Min
0.531
0.028
0.461
0.413
0.461
0.043
0.138
0.264
0.043
0.041
0.026
0.114
0.094
0.122
0.039
0.016
0.071
0.016
Max
0.555
0.055
0.484
0.437
0.484
0.055
0.162
0.287
0.059
0.049
0.034
0.130
0.110
0.134
0.055
0.031
0.094
0.024
DIM.
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
R
MARKING DIAGRAM
P/N
G
YWW
F
= Specific Device Code
= Green Compound
= Date Code
= Factory Code
Version: A1605
UR4KB60-B - UR4KB100-B
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Version: A1605

UR4KB60-BC2相似产品对比

UR4KB60-BC2 UR4KB60-BC2G UR4KB80-BC2G UR4KB80-BC2
描述 Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode, Bridge Rectifier Diode,
是否Rohs认证 符合 符合 符合 符合
厂商名称 Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
最小击穿电压 600 V 600 V 800 V 800 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
JESD-609代码 e3 e3 e3 e3
最大非重复峰值正向电流 135 A 135 A 135 A 135 A
元件数量 4 4 4 4
相数 1 1 1 1
端子数量 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C
最大输出电流 2 A 2 A 2 A 2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 600 V 600 V 800 V 800 V
表面贴装 NO NO NO NO
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE
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