The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 24 February 2005.
INCH-POUND
MIL-PRF-19500/406F
24 November 2004
SUPERSEDING
MIL-PRF-19500/406E
8 September 2003
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4460, 1N4460C, 1N4460D THROUGH 1N4496, 1N4496C, 1N4496D, AND
1N6485, 1N6485C, 1N6485D THROUGH 1N6491, 1N6491C, 1N6491D,
1N4460US, 1N4460CUS, 1N4460DUS THROUGH 1N4496US, 1N4496CUS, 1N4496DUS, AND
1N6485US, 1N6485CUS, 1N6485DUS THROUGH 1N6491US, 1N6491CUS, 1N6491DUS,
PLUS C AND D TOLERANCE SUFFIX; JAN, JANTX, JANTXV, AND JANS
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
*
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1.
SCOPE
1.1 Scope. This specification covers the performance requirements for microminiature 1.5 watt silicon, low
leakage, voltage regulator diodes with tolerances of 5 percent, 2 percent, and 1 percent. Four levels of product
assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.
* 1.2 Physical dimensions. See figure 1 (similar to DO-41), and figure 2 (surface mount).
* 1.3 Maximum ratings. Maximum ratings are as shown in maximum and primary test ratings (see 3.11) herein and
as follows: P
T
= 1.5 W (derate at 10 mW/°C above T
A
= +25°C); -55°C < T
J
< +175°C; -65°C < T
STG
< +175°C,
derating: See figures 3 and 4 herein.
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in maximum and primary test
ratings (see 3.11) and as follows:
3.3 V dc
≤
V
Z
≤
200 V dc (nominal).
a. 1N4460D through 1N4496D and 1N6485D through 1N6491D are 1 percent voltage tolerance.
b. 1N4460C through 1N4496C and 1N6485C through 1N6491C are 2 percent voltage tolerance.
c. 1N4460 through 1N4496 and 1N6485 through 1N6491 are 5 percent voltage tolerance.
R
θ
JL
= 42°C/W (max) at L = .375 inch (9.52 mm) (nonsurface mount).
R
θ
JEC
= 20°C/W (max) (surface mount).
* Comments, suggestions, or questions on this document should be addressed to Defense Supply Center,
Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to
Semiconductor@dscc.dla.mil.
Since contact information can change, you may want to verify the currency of this
address information using the ASSIST Online database at
http://assist.daps.dla.mil
.
AMSC N/A
FSC 5961
MIL-PRF-19500/406F
2. APPLICABLE DOCUMENTS
* 2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
* 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those cited in the solicitation or contract.
* DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500
-
Semiconductor Devices, General Specification for.
* DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750
-
Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at
http://assist.daps.dla.mil
or from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying
activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500, and as follows:
EC .............. End-cap.
US ............. Surface mount case outline, square end cap.
3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figures 1 and 2 herein.
3.4.1 Diode construction. These devices shall be constructed utilizing the requirements of MIL-PRF-19500 and as
follows.
3.4.1.1 Metallurgical bond for diodes with V
Z
greater than 6.8 V dc. Category I metallurgical bonds for diodes with
V
Z
greater than 6.8 V dc as defined in MIL-PRF-19500 shall be utilized.
3.4.1.2 Metallurgical bond for diodes with V
Z
less than or equal to 6.8 V dc. Category I, or category III metallurgical
bonds as defined in MIL-PRF-19500.
2
MIL-PRF-19500/406F
Ltr
Min
.106
.060
.800
.028
BL
BD
LL
LD
LU
Dimensions
Inches
Millimeters
Max
Min
Max
.160
2.69
4.06
.085
1.52
2.16
1.300
20.32
33.02
.032
0.71
0.81
.050
1.27
Notes
3
3
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. Package contour optional with BD and length BL. Heat slugs, if any, shall be included within this cylinder
but shall not be subject to minimum limit of BD.
4. The specified lead diameters apply in the zone between .050 inch (1.27 mm) from the diode body and the
end of the lead.
5. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 1. Physical dimensions of nonsurface mount device (similar to DO-41).
3
MIL-PRF-19500/406F
Ltr
BL
ECT
S
BD
Dimensions
Inches
Millimeters
Min
Max
Min
Max
.168
.200
4.28
5.08
.019
.028
0.48
0.71
.003
0.08
.091
.103
2.31
2.62
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
FIGURE 2. Physical dimensions of surface mount device, US(D5A).
4
MIL-PRF-19500/406F
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.5.1 Marking of US version devices. For US version devices only, all marking may be omitted from the device
except for the cathode marking. All marking which is omitted from the body of the device shall appear on the label of
the initial container.
3.6 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
When solder alloy is used for lead finish the maximum lead temperature shall be 175°C max. Where a choice of lead
finish is desired, it shall be specified in the acquisition document (see 6.2).
3.7 Polarity. The polarity of all types shall be indicated with a contrasting color band to denote the cathode end.
Alternatively, for US suffix devices, a minimum of three contrasting color dots spaced around the periphery on the
cathode end may be used.
3.8 Selection of tighter tolerance devices. The C and D suffix devices shall be selected from JAN, JANTX, JANTXV,
or JANS devices, which have successfully completed all applicable screening, and groups A, B, and C testing as
±5
percent tolerance devices. All sublots of C and D suffix devices shall pass table I, subgroup 2, at tightened tolerances.
Tighter tolerances for mounting clip temperature shall be maintained for reference purposes to establish correlation.
For C and D tolerance levels, T
L
= 25°C +1°C, -3°C at .375 inch (9.53 mm) from body or equivalent.
3.9 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, table I, and table II herein.
3.10 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.11 Maximum and primary test ratings. Maximum and primary test ratings for voltage regulator diodes are specified
in table III herein.
3.12 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a.
b.
c.
Qualification inspection (see 4.2).
Screening (see 4.3).
Conformance inspection (see 4.4).
4.1.1 Lot accumulation. Lot accumulation period shall be 3 months in lieu of 6 weeks.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500, and as specified
herein. Supplier imposed requirements shall be documented in the QM plan and must be submitted to the qualifying
activity for approval. Radiation characterization may be submitted in the QM plan at the option of the manufacturer.
4.2.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification only.
In case qualification was awarded to a prior revision of the associated specification that did not request the performance
of table II tests, the tests specified in table II herein that were not performed in the prior revision shall be performed on
the first inspection lot to this revision to maintain qualification.
5
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