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HY5RS573225FP-18: 产品描述DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144; 产品类别存储存储; 文件大小1MB，共63页; 制造商SK Hynix(海力士); 官网地址http://www.hynix.com/eng/; 标准

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HY5RS573225FP-18概述

DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144

HY5RS573225FP-18规格参数

参数名称	属性值
是否Rohs认证	符合
厂商名称	SK Hynix(海力士)
零件包装代码	BGA
包装说明	LFBGA, BGA144,12X12,32
针数	144
Reach Compliance Code	unknown
ECCN代码	EAR99
访问模式	FOUR BANK PAGE BURST
最长访问时间	0.28 ns
其他特性	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	550 MHz
I/O 类型	COMMON
JESD-30 代码	S-PBGA-B144
长度	12 mm
内存密度	268435456 bit
内存集成电路类型	DDR DRAM
内存宽度	32
功能数量	1
端口数量	1
端子数量	144
字数	8388608 words
字数代码	8000000
工作模式	SYNCHRONOUS
最高工作温度	85 °C
最低工作温度
组织	8MX32
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	LFBGA
封装等效代码	BGA144,12X12,32
封装形状	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260
电源	2 V
认证状态	Not Qualified
刷新周期	4096
座面最大高度	1.3 mm
自我刷新	YES
连续突发长度	4
最大待机电流	0.03 A
最大压摆率	1.05 mA
最大供电电压 (Vsup)	2.1 V
最小供电电压 (Vsup)	1.9 V
标称供电电压 (Vsup)	2 V
表面贴装	YES
技术	CMOS
温度等级	OTHER
端子形式	BALL
端子节距	0.8 mm
端子位置	BOTTOM
处于峰值回流温度下的最长时间	20
宽度	12 mm

HY5RS573225FP-18相似产品对比

	HY5RS573225FP-18	HY5RS573225FP-22	HY5RS573225FP-14	HY5RS573225FP-2	HY5RS573225FP-13	HY5RS573225FP-12	HY5RS573225FP-15	HY5RS573225FP-16
描述	DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.25ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.26ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144	DDR DRAM, 8MX32, 0.28ns, CMOS, PBGA144, 12 X 12 MM, LEAD FREE, FBGA-144
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合	符合
零件包装代码	BGA	BGA	BGA	BGA	BGA	BGA	BGA	BGA
包装说明	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32	LFBGA, BGA144,12X12,32
针数	144	144	144	144	144	144	144	144
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
访问模式	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
最长访问时间	0.28 ns	0.3 ns	0.26 ns	0.3 ns	0.25 ns	0.25 ns	0.26 ns	0.28 ns
其他特性	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
最大时钟频率 (fCLK)	550 MHz	450 MHz	700 MHz	500 MHz	750 MHz	800 MHz	650 MHz	600 MHz
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144	S-PBGA-B144
长度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
内存密度	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit	268435456 bit
内存集成电路类型	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
内存宽度	32	32	32	32	32	32	32	32
功能数量	1	1	1	1	1	1	1	1
端口数量	1	1	1	1	1	1	1	1
端子数量	144	144	144	144	144	144	144	144
字数	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words	8388608 words
字数代码	8000000	8000000	8000000	8000000	8000000	8000000	8000000	8000000
工作模式	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
组织	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32	8MX32
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA	LFBGA
封装等效代码	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32	BGA144,12X12,32
封装形状	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE	SQUARE
封装形式	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH	GRID ARRAY, LOW PROFILE, FINE PITCH
峰值回流温度（摄氏度）	260	260	260	260	260	260	260	260
电源	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
刷新周期	4096	4096	4096	4096	4096	4096	4096	4096
座面最大高度	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm	1.3 mm
自我刷新	YES	YES	YES	YES	YES	YES	YES	YES
连续突发长度	4	4	4	4	4	4	4	4
最大待机电流	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A	0.03 A
最大压摆率	1.05 mA	0.95 mA	1.2 mA	1 mA	1.25 mA	1.3 mA	1.15 mA	1.1 mA
最大供电电压 (Vsup)	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V
最小供电电压 (Vsup)	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V	1.9 V
标称供电电压 (Vsup)	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
表面贴装	YES	YES	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER	OTHER
端子形式	BALL	BALL	BALL	BALL	BALL	BALL	BALL	BALL
端子节距	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	20	20	20	20	20	20	20	20
宽度	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm	12 mm
厂商名称	SK Hynix(海力士)	SK Hynix(海力士)	-	-	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)	SK Hynix(海力士)

HY5RS573225FP-18

HY5RS573225FP-18概述

HY5RS573225FP-18规格参数

HY5RS573225FP-18相似产品对比

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