SMS501DE
Elektronische Bauelemente
0.03A , 600V , R
DS(ON)
700
N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
The SMS501DE is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent R
DS(on)
and gate charge for most of the synchronous
buck converter applications .
1
SOT-23
A
L
3
3
Top View
2
C B
1
2
FEATURES
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
K
E
D
F
REF.
A
B
C
D
E
F
G
Millimeter
Min.
Max.
2.70
3.10
2.10
2.65
1.20
1.40
0.89
1.15
1.78
2.04
0.30
0.50
H
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.09
0.18
0.35
0.65
0.08
0.20
0.6 REF.
0.95 BSC.
J
MARKING
501DE
PACKAGE INFORMATION
Package
SOT-23
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
T
C
=25°
C
Derate above 25°
C
Operating Junction and Storage Temperature Range
T
J
, T
STG
T
C
=25°
C
T
C
=100°
C
I
DM
P
D
Symbol
V
DS
V
GS
I
D
Rating
600
±20
0.03
0.024
0.12
0.5
0.004
-55~150
Unit
V
V
A
A
A
W
°
C
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
R
θJA
R
θJC
250
50
° /W
C
° /W
C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 1 of 4
SMS501DE
Elektronische Bauelemente
0.03A , 600V , R
DS(ON)
700
N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Threshold Voltage
Drain-Source Leakage Current
Static Drain-Source On-Resistance
Total Gate Charge
1.2
1.2
Typ.
Max.
Unit
Teat Conditions
BV
DSS
I
D(OFF)
I
GSS
V
GS(th)
I
DSS
R
DS(ON)
600
-
-
-2.7
12
-
-
-
-
-
-
-
310
330
1.8
0.75
0.56
18
90
93
210
99
9.1
5
-
0.1
±100
-1
-
700
700
-
-
-
-
-
V
µA
nA
V
mA
V
GS
=5V, I
D
= 250µA
V
GS
=5V, V
DS
=600V
V
GS
= ±20V
V
DS
=3V, I
D
=8µA
V
DS
=25V, V
GS
=0
V
GS
=0V, I
D
=3mA
V
GS
=10V, I
D
=16mA
I
D
=0.01A
V
DS
=4000V
V
GS
=5V
Q
g
Q
gs
Q
gd
T
d(on)
T
r
-
-
-
-
-
-
-
-
-
-
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time
Rise Time
1.2
nC
1.2
1.2
Turn-off Delay Time
Fall Time
1.2
1.2
nS
T
d(off)
T
f
C
iss
C
oss
C
rss
-
-
-
-
-
pF
V
DD
=300V
I
D
=0.01A
V
GS
=-5V
V
GS
=7V
R
G
=6
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
=5V
V
DS
=25V
f =1.0MHz
Source-Drain Diode
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse Test: Pulse width
≦300µS,
Duty cycle≦2%
2. Essentially independent of operating temperature.
V
SD
I
S
I
SM
T
rr
Q
rr
-
-
-
-
-
-
-
-
-
-
1.2
0.03
0.12
367
963
V
A
A
ns
µC
I
S
=16mA, V
GS
=5v
Integral Reverse P-N
Junction Diode in the
MOSFET
I
F
=0.01A,V
R
=300V,
dl
F
/dt=100A/µS
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 2 of 4
SMS501DE
Elektronische Bauelemente
0.03A , 600V , R
DS(ON)
700
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 3 of 4
SMS501DE
Elektronische Bauelemente
0.03A , 600V , R
DS(ON)
700
N-Ch Enhancement Mode Power MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 4 of 4
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
