2N2907AHR
Datasheet
Hi-Rel 60 V, 0.6 A PNP transistor
3
4
3
Features
V
CBO
1
2
I
C
(max.)
ESCC
JANS
0.5 A
0.6 A
H
FE
at 10 V,
150 mA
> 100
T
j
(max.)
1
2
60 V
200 °C
LCC-3
UB
Pin 4 in UB is connected to the metallic lid.
•
•
•
Hermetic packages
ESCC and JANS qualified
Up to 100 krad(Si) low dose rate
C
(2)
B
(3)
Description
The
2N2907AHR
is a silicon planar PNP transistor specifically designed and housed
in hermetic packages for aerospace and Hi-Rel applications. It is available in the JAN
qualification system (MIL-PRF19500 compliance) and in the ESCC qualification
system (ESCC 5000 compliance). In case of discrepancies between this datasheet
and the relevant agency specification, the latter takes precedence.
E
(1)
DS10460
Product summary
Product summary
Product status link
2N2907AHR
Device
JANSR2N2907AUBx
JANS2N2907AUBx
2N2907ARUBx
2N2907AUBx
SOC2907ARHRx
SOC2907AHRx
Qualification
system
JANSR
JANS
ESCC Flight
ESCC Flight
ESCC Flight
ESCC Flight
Agency
specification
MIL-PRF-19500/291
MIL-PRF-19500/291
5202/001
5202/001
5202/001
5202/001
Package
UB
UB
UB
UB
LCC-3
LCC-3
Radiation
level
100 krad
-
100 krad
-
100 krad
-
DS6095
-
Rev 11
-
April 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
2N2907AHR
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
ESCC
JANS
ESCC
Total dissipation at T
amb
≤ 25 °C
LCC-3 and UB
LCC-3 and UB
(1)
JANS: UB
Total dissipation at T
SP(IS)
= 25 °C
T
STG
T
J
Storage temperature range
Max. operating junction temperature
JANS: UB
0.4
0.73
0.5
1
-65 to 200
200
W
°C
°C
W
Parameter
Value
-60
-60
-5
0.5
0.6
Unit
V
V
V
A
P
TOT
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
Table 2.
Thermal data
LCC-3
Symbol
R
thJSP(IS)
Parameter
and UB
Value
90
325
437.5
240
(1)
°C/W
Unit
Thermal resistance junction-solder pad (infinite sink) (max) for JANS
Thermal resistance junction-ambient (max) for JANS
RthJA
Thermal resistance junction-ambient (max) for ESCC
1. When mounted on a 15 x 15 x 0.6 mm ceramic substrate.
DS6095
-
Rev 11
page 2/18
2N2907AHR
Electrical characteristics
2
Electrical characteristics
JANS and ESCC version of the products are assembled and tested in compliance with the agency specification.
The electrical characteristics of each version are provided in dedicated tables. Voltage and current values are
intended as negative.
2.1
JANS electrical characteristics
Table 3.
Electrical characteristics (T
amb
= 25 °C unless otherwise specified)
Symbol
Parameter
V
CB
= 60 V
I
CBO
Collector-base cut-off current (I
E
= 0)
V
CB
= 50 V
V
CB
= 50 V, T
amb
= 150 °C
I
CES
I
EBO
Collector-base cut-off current (I
E
= 0)
Emitter-base cut-off current (I
C
= 0)
Collector-emitter breakdown voltage
(I
B
= 0)
Collector-emitter saturation voltage
V
CE
= 50 V
V
EB
= 5 V
V
EB
= 4 V
I
C
= 10 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 500 mA, I
B
= 50 mA
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 1 mA, V
CE
= 10 V
h
FE
(1)
DC current gain
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
I
C
= 10 mA, T
amb
= -55 °C, V
CE
= 10 V
h
fe
C
OBO
C
IBO
t
on
t
off
Small signal current gain
Output capacitance, (I
E
= 0)
Input capacitance, (I
C
= 0)
Turn-on time
Turn-off time
I
C
= 20 mA, f = 100 MHz, V
CE
= 20 V
I
C
= 1 mA, f = 1 kHz, V
CE
= 10 V
100 kHz ≤ f ≤ 1 MHz, V
CB
= 10 V
100 kHz ≤ f ≤ 1 MHz, V
EB
= 2 V
I
CC
= 150 mA, I
B1
= 15 mA, V
CC
= 30 V
I
CC
= 150 mA, I
B1
= -I
B2
= 15 mA, V
CC
= 30 V
75
100
100
100
50
50
2
100
-
-
-
-
-
-
8
30
45
300
pF
pF
ns
ns
-
450
0.6
60
Test conditions
Min. Typ. Max. Unit
-
-
-
-
-
-
-
-
-
-
-
0.4
1.6
1.3
2.6
10
10
10
50
10
50
µA
nA
µA
nA
µA
nA
V
V
V
V
V
V
(BR)CEO
(1)
V
CE(sat)
(1)
V
BE(sat)
(1)
Base-emitter saturation voltage
300
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
DS6095
-
Rev 11
page 3/18
2N2907AHR
ESCC electrical characteristics
2.2
ESCC electrical characteristics
Table 4.
Electrical characteristics (T
amb
= 25 °C unless otherwise specified)
Symbol
I
CBO
I
CEX
Parameter
Collector-base cut-off current
(I
E
= 0)
Collector-emitter cut-off
current
Collector-base breakdown
voltage
(I
E
= 0)
V
(BR)CEO
(1)
Collector-emitter breakdown
voltage
(I
B
= 0)
V
(BR)EBO
Emitter-base breakdown
voltage
(I
C
= 0)
V
CE(sat)
(1)
V
BE(sat)
(1)
Collector-emitter saturation
voltage
Base-emitter saturation
voltage
I
C
= 150 mA, I
B
= 15 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 0.1 mA, V
CE
= 10 V
h
FE
(1)
Test conditions
V
CB
= 50 V
V
CB
= 50 V, T
amb
= 150 °C
V
CE
= 30 V, V
BE
= -0.5 V
Min.
Typ.
-
-
-
Max.
10
10
50
Unit
nA
µA
nA
V
(BR)CBO
I
C
= 10 µA
60
-
V
I
C
= 10 mA
60
-
V
I
C
= 10 µA
5
-
V
-
-
75
100
100
50
2
-
-
-
0.4
1.3
V
V
DC current gain
I
C
= 10 mA, V
CE
= 10 V
I
C
= 150 mA, V
CE
= 10 V
I
C
= 500 mA, V
CE
= 10 V
300
h
fe
C
OBO
Small signal current gain
Output capacitance
(I
E
= 0)
I
C
= 20 mA, f = 100 MHz, V
CE
= 20 V
100 kHz ≤ f ≤ 1 MHz, V
CB
= 10 V
I
CC
= 150 mA,
8
pF
t
on
Turn-on time
I
B1
= 15 mA,
V
CC
= 30 V
I
CC
= 150 mA,
-
45
ns
t
off
Turn-off time
I
B1
= -I
B2
= 15 mA,
V
CC
= 30 V
-
300
ns
1. Pulsed duration = 300 µs, duty cycle ≤ 1.5%
DS6095
-
Rev 11
page 4/18
2N2907AHR
Electrical characteristics (curves)
2.3
Electrical characteristics (curves)
Figure 1.
DC current gain (V
CE
= 1 V)
Figure 2.
DC current gain (V
CE
= 10 V)
AM11019v1
AM11020v1
Figure 3.
Collector emitter saturation voltage
Figure 4.
Base emitter saturation voltage (h
FE
= 10)
AM11021v1
AM11022v1
DS6095
-
Rev 11
page 5/18
PCB设计
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