PD- 95280
SMPS MOSFET
Applications
l
High frequency DC-DC converters
l
Lead-Free
IRF7478PbF
HEXFET
®
Power MOSFET
V
DSS
60V
R
DS(on)
max (mW)
26@V
GS
= 10V
30@V
GS
= 4.5V
I
D
4.2A
3.5A
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
S
S
S
G
1
8
A
A
D
D
D
D
2
7
3
6
4
5
Top View
SO-8
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
7.0
5.6
56
2.5
0.02
± 20
3.7
-55 to + 150
300 (1.6mm from case )
Units
A
W
W/°C
V
V/ns
°C
Thermal Resistance
Symbol
R
θJL
R
θJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
–––
Max.
20
50
Units
°C/W
Notes
through
are on page 8
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1
09/21/04
IRF7478PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
60
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.065
20
23
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
26
V
GS
= 10V, I
D
= 4.2A
mΩ
30
V
GS
= 4.5V, I
D
= 3.5A
3.0
V
V
DS
= V
GS
, I
D
= 250µA
20
V
DS
= 48V, V
GS
= 0V
µA
100
V
DS
= 48V, V
GS
= 0V, T
J
= 125°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
17
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
21
4.3
9.6
7.7
2.6
44
13
1740
300
37
1590
220
410
Max. Units
Conditions
–––
S
V
DS
= 50V, I
D
= 4.2A
31
I
D
= 4.2A
–––
nC
V
DS
= 48V
–––
V
GS
= 4.5V
–––
V
DD
= 30V
–––
I
D
= 4.2A
ns
–––
R
G
= 6.2Ω
–––
V
GS
= 10V
–––
V
GS
= 0V
–––
V
DS
= 25V
–––
pF
ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 48V, ƒ = 1.0MHz
–––
V
GS
= 0V, V
DS
= 0V to 48V
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
140
4.2
Units
mJ
A
Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
52
100
2.3
A
56
1.3
78
150
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 4.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.2A
di/dt = 100A/µs
D
S
2
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IRF7478PbF
100
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
100
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
VGS
15V
10V
4.5V
3.7V
3.5V
3.3V
3.0V
BOTTOM 2.7V
TOP
10
10
2.7V
2.7V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
1
0.1
1
0.1
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
T J = 150°C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 7.0A
ID, Drain-to-Source Current
(Α
)
2.0
1.5
10
T J = 25°C
1.0
0.5
1
2.5
3.0
VDS = 25V
20µs PULSE WIDTH
3.5
4.0
0.0
-60 -40 -20
V
GS
= 10V
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRF7478PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = C + Cgd, C
gs
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
10
I
D
=
4.2A
V
DS
= 48V
V
DS
= 30V
V
DS
= 12V
V
GS
, Gate-to-Source Voltage (V)
8
10000
C, Capacitance(pF)
Ciss
1000
6
Coss
100
4
Crss
2
10
1
10
100
0
0
10
20
30
40
VDS, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
I
D
, Drain Current (A)
T
J
= 150
°
C
100
10us
10
100us
1ms
1
10ms
1
T
J
= 25
°
C
0.1
0.2
V
GS
= 0 V
0.6
1.0
1.4
1.8
2.2
0.1
1
T
A
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
1000
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7478PbF
8.0
V
DS
V
GS
6.0
R
D
I
D
, Drain Current (A)
R
G
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
D.U.T.
+
-
V
DD
4.0
2.0
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0.0
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Fig 9.
Maximum Drain Current Vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
Thermal Response (Z
thJA
)
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P
DM
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
0.1
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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