1N4933GP thru 1N4937GP
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction
Fast Switching Rectifier
DO-204AL (DO-41)
Reverse Voltage
50 to 600V
Forward Current
1.0A
Features
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
ed*
ent
at
P
Dimensions in inches
and (millimeters)
0.205 (5.2)
0.160 (4.1)
®
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High temperature metallurgically bonded construction
• Capable of meeting environmental standards of
MIL-S-19500
• For use in high frequency rectifier circuits
• Fast switching for high efficiency
• Cavity-free glass passivated junction
• 1.0 Ampere operation at T
A
=75°C with no thernal runaway
• Typical I
R
less than 0.1µA
• High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
NOTE:
Lead diameter is
0.026 (0.66)
Mechanical Data
Case:
JEDEC DO-204AL, molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 oz., 0.34 g
0.023 (0.58)
for suffix "E" part numbers
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
*Maximum repetitive peak reverse voltage
*Maximum RMS voltage
*Maximum DC blocking voltage
*Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=75°C
*Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Typical thermal resistance
(1)
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
ΘJA
T
J
, T
STG
1N4933GP 1N4934GP 1N4935GP 1N4936GP 1N4937GP
50
35
50
100
70
100
200
145
200
1.0
30
55
-65 to +175
400
280
400
600
420
600
Unit
V
V
V
A
A
°C/W
°C
*Operating junction and storage temperature range
Electrical Characteristics
*Maximum DC reverse current
at rated DC blocking voltage
*Maximum reverse recovery time at
I
F
=1.0A, V
R
=30V
Ratings at 25°C ambient temperature unless otherwise specified.
*Maximum instantaneous forward voltage at 1.0A
T
A
=25°C
T
A
=125°C
V
F
I
R
t
rr
C
J
1.2
5.0
100
200
15
V
µA
ns
pF
Typical junction capacitance at 4.0V, 1MHz
Notes:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375” (9.5mm) lead length, P.C.B. mounted
*JEDEC registered values
Document Number 88509
27-Feb-02
www.vishay.com
1
1N4933GP thru 1N4937GP
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves
(T
A
= 25°C unless otherwise noted)
Fig. 1 — Forward Current
Derating Curves
Average Forward Rectified Current (A)
1.0
40
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
T
J
= T
J max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
0.75
Peak Forward Surge Current (A)
Resistive or
Inductive Load
30
0.5
20
0.25
10
0.375" (9.5mm) Lead Length
0
0
25
50
75
100
125
150
175
0
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 — Typical Instantaneous
Forward Characteristics
10
20
Fig. 4 — Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
10
T
J
= 125°C
1
T
J
= 75°C
0.1
Instantaneous Forward Current (A)
1
T
J
= 25°C
Pulse Width = 300µs
1% Duty Cycle
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 — Typical Junction Capacitance
100
100
Fig. 6 — Typical Transient
Thermal Impedance
Typical Thermal Impedance (°CW)
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
10
1
1
1
10
100
0.1
0.01
0.1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
t, Pulse Duration (sec.)
Document Number 88509
27-Feb-02
嵌入式系统
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