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SZMMBZ5230ELT1G

产品描述4.7 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, 3 PIN
产品类别分立半导体    二极管   
文件大小161KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
下载文档 详细参数 全文预览

SZMMBZ5230ELT1G概述

4.7 V, 0.225 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236, LEAD FREE, PLASTIC, CASE 318-08, 3 PIN

SZMMBZ5230ELT1G规格参数

参数名称属性值
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
包装说明R-PDSO-G3
Reach Compliance Codecompliant
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
JEDEC-95代码TO-236
JESD-30 代码R-PDSO-G3
元件数量1
端子数量3
最高工作温度150 °C
最低工作温度-65 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散0.225 W
参考标准AEC-Q101
标称参考电压4.7 V
表面贴装YES
技术ZENER
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差5.11%
工作测试电流20 mA

文档预览

下载PDF文档
MMBZ52xxELT1G Series,
SZMMBZ52xxELT1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Features
http://onsemi.com
3
Cathode
1
Anode
225 mW Rating on FR−4 or FR−5 Board
Zener Voltage Range
2.4 V to 91 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power
225 W (8 x 20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING
DIAGRAM
3
1
2
SOT−23
CASE 318
STYLE 8
1
Bxx M
G
G
Bxx
xx
M
G
= Device Code
= (Refer to page 2)
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
Unit
W
ORDERING INFORMATION
Device
MMBZ52xxELT1G
SZMMBZ52xxELT1G
225
1.8
556
300
2.4
417
−65
to
+150
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3000 / Tape &
Reel
3000 / Tape &
Reel
10000 / Tape &
Reel
MMBZ52xxELT3G
R
qJA
P
D
R
qJA
T
J
, T
stg
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2011
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
December, 2011
Rev. 7
1
Publication Order Number:
MMBZ5221ELT1/D
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