SUM1960NE
Elektronische Bauelemente
0.32A , 60V , R
DS(ON)
2
Ω
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low R
DS(on)
and to
ensure minimal power loss and heat dissipation.
A
E
SOT-363
L
FEATURES
Low R
DS(on)
provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SOT-363
saves board space
Fast switching speed
High performance trench technology
F
DG
B
C
K
H
J
APPLICATION
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.10
1.50
0.10
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
8°
0.650 TYP.
PACKAGE INFORMATION
Package
SOT-363
MPQ
3K
Leader Size
7 inch
ESD
Protection Diode
2KV
ABSOLUTE MAXIMUM RATINGS
(
T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
2
1
1
Symbol
V
DS
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
S
C
T
A
=25°
P
D
T
A
=70°
C
Ratings
60
±20
0.32
Unit
V
V
A
0.26
0.7
0.25
0.3
W
0.21
-55~150
°
C
A
A
Continuous Source Current (Diode Conduction)
Power Dissipation
1
Operating Junction and Storage Temperature Range
T
J
, T
STG
Thermal Resistance Rating
Maximum Junction to Ambient
1
t
≦
5 sec
Steady State
R
θ
JA
415
460
° /W
C
Notes:
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
4-Dec-2012 Rev. A
Page 1 of 2
SUM1960NE
Elektronische Bauelemente
0.32A , 60V , R
DS(ON)
2
Ω
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
1
Symbol
Min.
Typ.
Max.
Unit
V
uA
uA
Teat Conditions
V
DS
=V
GS
, I
D
=250uA
V
DS
=0, V
GS
=±20V
V
DS
=48V, V
GS
=0
V
DS
=48V, V
GS
=0, T
J
=55°C
Static
V
GS(th)
I
GSS
I
DSS
I
D(on)
1
1
-
-
-
0.3
-
-
-
-
-
-
-
-
8
1.1
2
-
±10
1
50
-
2
3
-
-
A
V
DS
=5V, V
GS
=10V
V
GS
=10V, I
D
=0.3A
V
GS
=4.5V, I
D
=0.2A
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
1
1
R
DS(ON)
g
fs
V
SD
-
-
-
S
V
V
DS
=4.5V, I
D
=0.3A
I
S
=0.2A, V
GS
=0
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
0.4
0.1
0.1
10
6
20
3
-
-
-
-
-
nS
-
-
nC
V
DS
=10V,
V
GS
=5V,
I
D
=0.3A
V
DD
=10V,
V
GEN
=10V,
R
L
=30 ,
I
D
=0.3A
Notes:
1. Pulse test: PW
≦
300us duty cycle
≦
2%.
2. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
4-Dec-2012 Rev. A
Page 2 of 2
工作这点儿事
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
